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A comprehensive study of charge transport in Au-contacted graphene on Ge/Si(001)

Applied physics letters, 2020-07, Vol.117 (2)

2020

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Nucleation and growth of HfO2 layers on graphene by chemical vapor deposition

Applied physics letters, 2013-10, Vol.103 (18)

2013

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Deposition of thin silicon layers on transferred large area graphene

Applied physics letters, 2013-12, Vol.103 (26)

2013

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Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (19), p.3260

2022

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Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-09, Vol.33 (5)

2015

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Graphene Schottky Junction on Pillar Patterned Silicon Substrate

Nanomaterials (Basel, Switzerland), 2019-04, Vol.9 (5), p.659

2019

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Direct growth of HfO2 on graphene by CVD

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-01, Vol.33 (1)

2015

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Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001)

ACS applied materials & interfaces, 2023-08, Vol.15 (30), p.36966-36974

2023

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Graphene growth on Ge(100)/Si(100) substrates by CVD method

Scientific reports, 2016-02, Vol.6 (1), p.21773-21773, Article 21773

2016

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Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3124-3131

2011

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Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

ACS nano, 2015-05, Vol.9 (5), p.4776-4785

2015

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Investigation of the Oxidation Behavior of Graphene/Ge(001) Versus Graphene/Ge(110) Systems

ACS applied materials & interfaces, 2020-01, Vol.12 (2), p.3188-3197

2020

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Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM Devices

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3124-3131

2011

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Large-scale chemical vapor deposition of graphene on polycrystalline nickel films: Effect of annealing conditions

Thin solid films, 2019-11, Vol.690, p.137565, Article 137565

2019

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Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2019-11, Vol.37 (6)

2019

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Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

ACS applied materials & interfaces, 2020-02, Vol.12 (8), p.9656-9663

2020

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Electron Transport across Vertical Silicon/MoS 2 /Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

ACS applied materials & interfaces, 2020-02, Vol.12 (8), p.9656-9663

2020

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Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

Scientific reports, 2016-07, Vol.6 (1), p.29223-29223, Article 29223

2016

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Contacting graphene in a 200 mm wafer silicon technology environment

Solid-state electronics, 2018-06, Vol.144, p.17-21

2018

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Properties of stacked SrTiO3/Al2O3 metal–insulator–metal capacitors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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Impact of Temperature on the Resistive Switching Behavior of Embedded [Formula Omitted]-Based RRAM Devices

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3124

2011

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Impact of Temperature on the Resistive Switching Behavior of Embedded hbox HfO 2 -Based RRAM Devices

IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3124-3131

2011

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Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2273-2277

2008

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Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure

Physica status solidi. C, 2011-04, Vol.8 (4), p.1302-1306

2011

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Optimization of the Metal Deposition Process for the Accurate Estimation of Low Metal-Graphene Contact-Resistance

2024 47th MIPRO ICT and Electronics Convention (MIPRO), 2024, p.1561-1565

2024

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A comprehensive study of charge transport in Au-contacted graphene on Ge/Si(001)

Nucleation and growth of HfO2 layers on graphene by chemical vapor deposition

Deposition of thin silicon layers on transferred large area graphene

Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition

Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods

Graphene Schottky Junction on Pillar Patterned Silicon Substrate

Direct growth of HfO2 on graphene by CVD

Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001)

Graphene growth on Ge(100)/Si(100) substrates by CVD method

Impact of Temperature on the Resistive Switching Behavior of Embedded \hbox-Based RRAM Devices

Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene

Investigation of the Oxidation Behavior of Graphene/Ge(001) Versus Graphene/Ge(110) Systems

Impact of Temperature on the Resistive Switching Behavior of Embedded HfO2-Based RRAM Devices

Large-scale chemical vapor deposition of graphene on polycrystalline nickel films: Effect of annealing conditions

Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry

Electron Transport across Vertical Silicon/MoS2/Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Electron Transport across Vertical Silicon/MoS 2 /Graphene Heterostructures: Towards Efficient Emitter Diodes for Graphene Base Hot Electron Transistors

Perfluorodecyltrichlorosilane-based seed-layer for improved chemical vapour deposition of ultrathin hafnium dioxide films on graphene

Contacting graphene in a 200 mm wafer silicon technology environment

Properties of stacked SrTiO3/Al2O3 metal–insulator–metal capacitors

Impact of Temperature on the Resistive Switching Behavior of Embedded [Formula Omitted]-Based RRAM Devices

Impact of Temperature on the Resistive Switching Behavior of Embedded hbox HfO 2 -Based RRAM Devices

Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications

Silicon based light emitter utilizing tunnel injection of excess carriers via MIS structure

Optimization of the Metal Deposition Process for the Accurate Estimation of Low Metal-Graphene Contact-Resistance

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