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Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Scientific reports, 2021-06, Vol.11 (1), p.13111-13111, Article 13111

2021

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Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Scientific reports, 2021-08, Vol.11 (1), p.17222-17222, Article 17222

2021

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Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

Applied physics letters, 2012-06, Vol.100 (23)

2012

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Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

ACS applied materials & interfaces, 2016-12, Vol.8 (49), p.33786-33793

2016

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High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates

ACS applied materials & interfaces, 2020-09, Vol.12 (38), p.43065-43072

2020

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Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Optical properties and band gap characterization of high dielectric constant oxides

Thin solid films, 2012-05, Vol.520 (14), p.4532-4535

2012

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Reliable metal-graphene contact formation process flows in a CMOS-compatible environment

Nanoscale advances, 2022-10, Vol.4 (2), p.4373-438

2022

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Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

Journal of applied physics, 2009-06, Vol.105 (11)

2009

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High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Thin solid films, 2010-05, Vol.518 (15), p.4380-4384

2010

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Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Microelectronic engineering, 2011-07, Vol.88 (7), p.1133-1135

2011

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Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Thin solid films, 2012-05, Vol.520 (14), p.4576-4579

2012

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Processing and integration of graphene in a 200 mm wafer Si technology environment

Microelectronic engineering, 2019-01, Vol.205, p.44-52

2019

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Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

Thin solid films, 2013-06, Vol.536, p.68-73

2013

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The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

Thin solid films, 2009-10, Vol.517 (23), p.6334-6336

2009

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Textured strontium titanate layers on platinum by atomic layer deposition

Thin solid films, 2012-08, Vol.520 (21), p.6535-6540

2012

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Band alignment and electron traps in Y2O3 layers on (100)Si

Applied physics letters, 2009-09, Vol.95 (13)

2009

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Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

Thin solid films, 2011-03, Vol.519 (11), p.3831-3834

2011

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Basic investigation of HfO2 based metal–insulator–metal diodes

Thin solid films, 2011-06, Vol.519 (17), p.5796-5799

2011

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Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors

Thin solid films, 2011-06, Vol.519 (17), p.5734-5739

2011

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Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material

Microelectronic engineering, 2011-07, Vol.88 (7), p.1521-1524

2011

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Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2273-2277

2008

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IEEE_Xplore

Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

Thin solid films, 2008-06, Vol.516 (15), p.4758-4764

2008

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Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices

Microelectronic engineering, 2008-08, Vol.85 (8), p.1762-1765

2008

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Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers

Thin solid films, 2011-06, Vol.519 (17), p.5730-5733

2011

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Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Author Correction: Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

Metal-Free CVD Graphene Synthesis on 200 mm Ge/Si(001) Substrates

High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Optical properties and band gap characterization of high dielectric constant oxides

Reliable metal-graphene contact formation process flows in a CMOS-compatible environment

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

High performance metal–insulator–metal capacitors with atomic vapor deposited HfO2 dielectrics

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Properties of atomic-vapor and atomic-layer deposited Sr, Ti, and Nb doped Ta2O5 Metal–Insulator–Metal capacitors

Processing and integration of graphene in a 200 mm wafer Si technology environment

Metal-organic chemical vapor deposition of high-k dielectric Ce–Al–O layers from various metal-organic precursors for metal–insulator–metal capacitor applications

The role of the HfO2―TiN interface in capacitance―voltage nonlinearity of Metal-Insulator-Metal capacitors

Textured strontium titanate layers on platinum by atomic layer deposition

Band alignment and electron traps in Y2O3 layers on (100)Si

Atomic Vapor Depositions of Ti–Ta–O thin films for Metal–Insulator–Metal applications

Basic investigation of HfO2 based metal–insulator–metal diodes

Enhanced leakage current behavior of Sr2Ta2O7-x/SrTiO3 bilayer dielectrics for metal-insulator-metal capacitors

Single SrTiO3 and Al2O3/SrTiO3/Al2O3 based MIM capacitors: Impact of the bottom electrode material

Atomic Vapor Deposition of Strontium Tantalate Films for MIM Applications

Chemical vapour deposition of praseodymium oxide films on silicon: influence of temperature and oxygen pressure

Investigation of atomic vapour deposited TiN/HfO2/SiO2 gate stacks for MOSFET devices

Effect of the composition on the bandgap width of high-κ MexTiyOz (Me = Hf, Ta, Sr) layers

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