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Hybrid Magnetic-Inductive Angular Sensor with 360° Range and Stray-Field Immunity

Sensors (Basel, Switzerland), 2022-03, Vol.22 (6), p.2153

2022

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Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 ^ ) Electronics

IEEE electron device letters, 2013-04, Vol.34 (4), p.496-498

2013

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Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

Journal of applied physics, 2013-06, Vol.113 (21)

2013

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94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

IEEE electron device letters, 2015-01, Vol.36 (1), p.17-19

2015

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Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (11), Article 115208

2014

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W -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

IEEE electron device letters, 2016-08, Vol.37 (8), p.1025-1028

2016

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AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3091-3098

2013

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Faceting of InAs−InSb Heterostructured Nanowires

Crystal growth & design, 2010-09, Vol.10 (9), p.4038-4042

2010

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[Formula Omitted]-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

IEEE electron device letters, 2016-08, Vol.37 (8), p.1025

2016

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Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.304-306

2011

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GaN-on-insulator technology for high-temperature electronics beyond 400 °C

Semiconductor science and technology, 2013-07, Vol.28 (7), p.74026

2013

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AlInN-Based HEMTs for Large-Signal Operation at 40 GHz : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3091-3098

2013

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Synthesis of AlAs and AlAs–GaAs Core–Shell Nanowires

Crystal growth & design, 2011-09, Vol.11 (9), p.4053-4058

2011

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GaN-on-insulator technology for high-temperature electronics beyond 400 °C: Gallium nitride electronics

Semiconductor science and technology, 2013, Vol.28 (7)

2013

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Synthesis of AIAs and AIAs―GaAs Core―Shell Nanowires

Crystal growth & design, 2011, Vol.11 (9), p.4053-4058

2011

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AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz

Japanese Journal of Applied Physics, 2013-08, Vol.52 (8), p.08JN16-08JN16-4

2013

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Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Physical review. B, Condensed matter and materials physics, 2014-09, Vol.90 (11)

2014

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Variations in the Human Serum Albumin Gene: Molecular and Functional Aspects

International journal of molecular sciences, 2022-01, Vol.23 (3), p.1159

2022

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Diagnosis, Phenotype, and Molecular Genetics of Congenital Analbuminemia

Frontiers in genetics, 2019-04, Vol.10, p.336-336

2019

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Case Report: Atypical Manifestations Associated With FOXP3 Mutations. The "Fil Rouge" of Treg Between IPEX Features and Other Clinical Entities?

Frontiers in immunology, 2022-04, Vol.13, p.854749

2022

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Wolfram syndrome: new mutations, different phenotype

PloS one, 2012-01, Vol.7 (1), p.e29150-e29150

2012

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Intussusception of the bowel in adult woman due to bulky inflammatory fibroid polyp treated in emergency. A case report

Acta bio-medica de l'Ateneo Parmense, 2022-01, Vol.93 (Suppl 1)

2022

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Recurrent Hypoglycemia in a Case of Congenital Analbuminemia

Case reports in endocrinology, 2020, Vol.2020 (2020), p.1-6

2020

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A novel splicing mutation in the albumin gene (c.270+1G>T) causes analbuminaemia in a German infant

Annals of clinical biochemistry, 2016-09, Vol.53 (5), p.615-619

2016

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Congenital Analbuminemia in Unrelated Algerian and Turkish Families is Caused by the Same Molecular Defect in the Albumin Gene

Annals of Laboratory Medicine, 2018, 38(2), , pp.185-188

2018

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Hybrid Magnetic-Inductive Angular Sensor with 360° Range and Stray-Field Immunity

Ultrathin Body InAlN/GaN HEMTs for High-Temperature (600 ^ ) Electronics

Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors

94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

W -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz

Faceting of InAs−InSb Heterostructured Nanowires

[Formula Omitted]-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon

Growth mechanism of InAs–InSb heterostructured nanowires grown by chemical beam epitaxy

GaN-on-insulator technology for high-temperature electronics beyond 400 °C

AlInN-Based HEMTs for Large-Signal Operation at 40 GHz : GaN ELECTRONIC DEVICES

Synthesis of AlAs and AlAs–GaAs Core–Shell Nanowires

GaN-on-insulator technology for high-temperature electronics beyond 400 °C: Gallium nitride electronics

Synthesis of AIAs and AIAs―GaAs Core―Shell Nanowires

AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz

Shallow donor and deep DX-like center in InAlN layers nearly lattice-matched to GaN

Variations in the Human Serum Albumin Gene: Molecular and Functional Aspects

Diagnosis, Phenotype, and Molecular Genetics of Congenital Analbuminemia

Case Report: Atypical Manifestations Associated With FOXP3 Mutations. The "Fil Rouge" of Treg Between IPEX Features and Other Clinical Entities?

Wolfram syndrome: new mutations, different phenotype

Intussusception of the bowel in adult woman due to bulky inflammatory fibroid polyp treated in emergency. A case report

Recurrent Hypoglycemia in a Case of Congenital Analbuminemia

A novel splicing mutation in the albumin gene (c.270+1G>T) causes analbuminaemia in a German infant

Congenital Analbuminemia in Unrelated Algerian and Turkish Families is Caused by the Same Molecular Defect in the Albumin Gene

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