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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts

Materials chemistry and physics, 1993-03, Vol.33 (3), p.281-288

1993

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Ultrashallow junctions for ULSI using As/sub 2//sup +/ implantation and rapid thermal anneal

IEEE electron device letters, 1992-10, Vol.13 (10), p.507-509

1992

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Complex CO-potassium interactions on Cu(100): an electron energy loss, thermal desorption, and work function study

The Journal of chemical physics, 1987-07, Vol.87 (2), p.1367-1375

1987

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Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

Applied surface science, 1995, Vol.84 (4), p.413-418

1995

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Coadsorption of CO and K on Ni(100): II. XPS, UPS, Δφ and ELS studies

Surface science, 1984-06, Vol.141 (1), p.82-100

1984

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Doping of In sub 0. 53 Ga sub 0. 47 As and In sub 0. 52 Al sub 0. 48 As by Si sup + and Be sup + ion implantation

Journal of applied physics, 1992-01, Vol.71:1

1992

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Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy

Journal of crystal growth, 1991-06, Vol.112 (2-3), p.343-353

1991

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Potassium and coadsorbed potassium and deuterium on Ni(100)

Surface science, 1984-01, Vol.139 (2), p.379-395

1984

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Redistribution of beryllium in InP and Ga 0.47In 0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy

Journal of crystal growth, 1991, Vol.112 (2), p.343-353

1991

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In-situ process for AlGaAs compound semiconductor : materials science and device fabrication

Journal of electronic materials, 1994-07, Vol.23 (7), p.625-634

1994

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Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy

Journal of applied physics, 1991-06, Vol.69 (12), p.8426-8428

1991

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Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon

MRS proceedings, 1994, Vol.354, Article 307

1994

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Coadsorption of CO and K on Ni(100)

Surface science, 1984-06, Vol.141 (1), p.82-100

1984

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Probing potassium on Ni(100) with adsorbed rare gas atoms

Surface science, 1986-03, Vol.167 (1), p.39-56

1986

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Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

Electronics letters, 1989-09, Vol.25 (19), p.1315-1317

1989

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Potassium on Ni(100) probed by photoemission of coadsorbed xenon

Surface science, 1985-09, Vol.160 (1), p.70-74

1985

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The coadsorption of carbon monoxide and deuterium on potassium predosed Ni(100)

Surface science, 1984-01, Vol.140 (2), p.L259-L263

1984

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Probing potassium on Ni(100) with adsorbed rare gas atoms

Surface science letters, 1986-03, Vol.167 (1), p.A72-A72

1986

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Potassium on Ni(100) probed by photoemission of coadsorbed xenon

Surface science letters, 1985-09, Vol.160 (1), p.A492-A492

1985

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Coadsorption of CO and K on Ni(100) II. XPS, UPS, Δφ and ELS studies

Surface science letters, 1984-06, Vol.141 (1), p.A193-A193

1984

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Potassium and coadsorbed potassium and deuterium on Ni(100)

Surface science letters, 1984-04, Vol.139 (2), p.A131-A131

1984

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Coadsorption of CO and K on Ni(100) I. TDS studies

Applications of surface science, 1984, Vol.19 (1), p.59-72

1984

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts

Ultrashallow junctions for ULSI using As/sub 2//sup +/ implantation and rapid thermal anneal

The interstitial fraction of diffusivity of common dopants in Si

Complex CO-potassium interactions on Cu(100): an electron energy loss, thermal desorption, and work function study

Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon

Coadsorption of CO and K on Ni(100): II. XPS, UPS, Δφ and ELS studies

Doping of In sub 0. 53 Ga sub 0. 47 As and In sub 0. 52 Al sub 0. 48 As by Si sup + and Be sup + ion implantation

Redistribution of beryllium in InP and Ga0.47In0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy

Potassium and coadsorbed potassium and deuterium on Ni(100)

Redistribution of beryllium in InP and Ga 0.47In 0.53as grown by hydride source molecular beam epitaxy and metalorganic molecular beam epitaxy

In-situ process for AlGaAs compound semiconductor : materials science and device fabrication

Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy

Understanding and Controlling Transient Enhanced Dopant Diffusion in Silicon

Coadsorption of CO and K on Ni(100)

Probing potassium on Ni(100) with adsorbed rare gas atoms

Tin-doped n+ InP and GaInAs grown by atmospheric-pressure MOCVD

Potassium on Ni(100) probed by photoemission of coadsorbed xenon

The coadsorption of carbon monoxide and deuterium on potassium predosed Ni(100)

Probing potassium on Ni(100) with adsorbed rare gas atoms

Potassium on Ni(100) probed by photoemission of coadsorbed xenon

Coadsorption of CO and K on Ni(100) II. XPS, UPS, Δφ and ELS studies

Potassium and coadsorbed potassium and deuterium on Ni(100)

Coadsorption of CO and K on Ni(100) I. TDS studies

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