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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Journal of applied physics, 1997-05, Vol.81 (9), p.6031-6050

1997

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Doping of Si thin films by low-temperature molecular beam epitaxy

Journal of applied physics, 1993-06, Vol.73 (12), p.8237-8241

1993

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The interstitial fraction of diffusivity of common dopants in Si

Applied physics letters, 1997-12, Vol.71 (26), p.3862-3864

1997

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Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Applied physics letters, 1995-01, Vol.66 (5), p.568-570

1995

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Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Applied physics letters, 1993-08, Vol.63 (5), p.639-641

1993

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Boron diffusion in strained Si1-xGex epitaxial layers

Physical review letters, 1993-08, Vol.71 (6), p.883-886

1993

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Beryllium δ doping of GaAs grown by molecular beam epitaxy

Journal of applied physics, 1990-02, Vol.67 (4), p.1969-1979

1990

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Damage to InP and InGaAsP surfaces resulting from CH4/H2 reactive ion etching

Journal of applied physics, 1990-07, Vol.68 (2), p.785-792

1990

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Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching

Applied physics letters, 1989-07, Vol.55 (1), p.56-58

1989

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Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching

Applied physics letters, 1993-05, Vol.62 (21), p.2658-2660

1993

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Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy

Applied physics letters, 1993-02, Vol.62 (7), p.735-737

1993

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GaAs surface reconstruction obtained using a dry process

Journal of applied physics, 1993-02, Vol.73 (4), p.2035-2037

1993

Volltextzugriff (PDF)

Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion

Applied physics letters, 1996-03, Vol.68 (12), p.1687-1689

1996

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Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Journal of applied physics, 1995-04, Vol.77 (7), p.3056-3060

1995

Volltextzugriff (PDF)

Spatial resolution of the capacitance-voltage profiling technique on semiconductors with quantum confinement

Applied physics letters, 1990-07, Vol.57 (5), p.497-499

1990

Volltextzugriff (PDF)

Complex CO-potassium interactions on Cu(100): an electron energy loss, thermal desorption, and work function study

The Journal of chemical physics, 1987-07, Vol.87 (2), p.1367-1375

1987

Volltextzugriff (PDF)

Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts

Materials chemistry and physics, 1993-03, Vol.33 (3), p.281-288

1993

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Interfacial characteristics of AlGaAs after in situ electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth

Journal of applied physics, 1994-03, Vol.75 (6), p.3105-3111

1994

Volltextzugriff (PDF)

Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II: Epitaxial quality

Journal of applied physics, 1987-10, Vol.62 (8), p.3398-3404

1987

Volltextzugriff (PDF)

Heavily-doped n-type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin

Journal of applied physics, 1990-06, Vol.67 (11), p.6823-6829

1990

Volltextzugriff (PDF)

Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy

Journal of applied physics, 1991-06, Vol.69 (12), p.8426-8428

1991

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Potassium and coadsorbed potassium and deuterium on Ni(100)

Surface science, 1984-01, Vol.139 (2), p.379-395

1984

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A photoluminescence study of hydrogenated GaAs grown on a InP substrate by metalorganic chemical vapor deposition

Journal of applied physics, 1990-07, Vol.68 (2), p.902-905

1990

Volltextzugriff (PDF)

Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3

Applied physics letters, 1990-04, Vol.56 (17), p.1688-1690

1990

Volltextzugriff (PDF)

Secondary-ion mass spectrometry on δ-doped GaAs grown by molecular beam epitaxy

Applied physics letters, 1990-10, Vol.57 (17), p.1799-1801

1990

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

Doping of Si thin films by low-temperature molecular beam epitaxy

The interstitial fraction of diffusivity of common dopants in Si

Trap-limited interstitial diffusion and enhanced boron clustering in silicon

Oxidation enhanced diffusion in Si B-doping superlattices and Si self-interstitial diffusivities

Boron diffusion in strained Si1-xGex epitaxial layers

Beryllium δ doping of GaAs grown by molecular beam epitaxy

Damage to InP and InGaAsP surfaces resulting from CH4/H2 reactive ion etching

Passivation of acceptors in InP resulting from CH4/H2 reactive ion etching

Removal of GaAs surface contaminants using H2 electron cyclotron resonance plasma treatment followed by Cl2 chemical etching

Hydrogen plasma removal of AlGaAs oxides before molecular beam epitaxy

GaAs surface reconstruction obtained using a dry process

Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion

Influence of fluorine implant on boron diffusion: Determination of process modeling parameters

Spatial resolution of the capacitance-voltage profiling technique on semiconductors with quantum confinement

Complex CO-potassium interactions on Cu(100): an electron energy loss, thermal desorption, and work function study

Ti/Pt/AuSn metallization scheme for bonding of InP-based laser diodes to chemical vapor deposited diamond submounts

Interfacial characteristics of AlGaAs after in situ electron cyclotron resonance plasma etching and molecular beam epitaxial regrowth

Silicon surface cleaning by low dose argon-ion bombardment for low-temperature (750 °C) epitaxial deposition. II: Epitaxial quality

Heavily-doped n-type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin

Effect of zinc diffusion on impurity profiles of carbon- and beryllium-doped thin GaAs layers grown by chemical beam epitaxy

Potassium and coadsorbed potassium and deuterium on Ni(100)

A photoluminescence study of hydrogenated GaAs grown on a InP substrate by metalorganic chemical vapor deposition

Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3

Secondary-ion mass spectrometry on δ-doped GaAs grown by molecular beam epitaxy

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