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Illumination with solid state lighting technology

IEEE journal of selected topics in quantum electronics, 2002-03, Vol.8 (2), p.310-320

2002

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High-power AlGaInN flip-chip light-emitting diodes

Applied physics letters, 2001-05, Vol.78 (22), p.3379-3381

2001

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High Power LEDs - Technology Status and Market Applications

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.380-388

2002

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Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Applied physics letters, 2003-04, Vol.82 (14), p.2221-2223

2003

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Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

Applied physics letters, 1997-01, Vol.70 (4), p.420-422

1997

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A study of parasitic reactions between NH3 and TMGa or TMAI

Journal of electronic materials, 1996-06, Vol.25 (6), p.1004-1008

1996

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Metalorganic chemical vapor deposition of III-V semiconductors

Journal of applied physics, 1985-01, Vol.58 (8), p.R31-R55

LUDOWISE, M. J

1985

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Hydrogen-decorated lattice defects in proton implanted GaN

Applied physics letters, 1998-04, Vol.72 (14), p.1703-1705

1998

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An Infant Mortality Study of III-V Multijunction Concentrator Cells

IEEE journal of photovoltaics, 2012-10, Vol.2 (4), p.411-416

2012

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High-Power III-Nitride Emitters for Solid-State Lighting

Physica status solidi. A, Applied research, 2002-08, Vol.192 (2), p.237-245

2002

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Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces

Applied physics letters, 1995-10, Vol.67 (14), p.2060-2062

1995

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High-efficiency InGaN MQW blue and green LEDs

Journal of crystal growth, 1998-06, Vol.189-190, p.786-789

1998

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Long wavelength (λ∼1.5 μm) native-oxide-defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes

Journal of applied physics, 1994-03, Vol.75 (5), p.2706-2708

1994

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High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry

IEEE journal of quantum electronics, 1995-08, Vol.31 (8), p.1494-1503

1995

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Stimulated emission in strained-layer quantum-well heterostructures

Journal of applied physics, 1983-11, Vol.54 (11), p.6183-6189

1983

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Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode

IEEE photonics technology letters, 1993-05, Vol.5 (5), p.509-511

1993

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Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers

Applied physics letters, 1993-05, Vol.62 (20), p.2474-2476

1993

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Study of Mg diffusion during metalorganic chemical vapor deposition of GaN and AlGaN

Applied physics letters, 1999-02, Vol.74 (5), p.688-690

1999

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Refractive index and electro-optic effect in compressive and tensile strained quantum wells

Journal of applied physics, 1991-04, Vol.69 (7), p.4071-4074

1991

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Continuous 300-K laser operation of strained superlattices

Applied physics letters, 1983-03, Vol.42 (6), p.487-489

1983

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Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1-xAs (0≤x≤0.40)

Journal of applied physics, 1984-01, Vol.55 (10), p.3664-3668

1984

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The growth of Magnesium-doped GaAs by the Om-Vpe process

Journal of electronic materials, 1983-05, Vol.12 (3), p.507-524

1983

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Theoretical and experimental studies of the effects of compressive and tensile strain on the performance of InP-InGaAs multiquantum-well lasers

IEEE journal of quantum electronics, 1992-05, Vol.28 (5), p.1239-1242

1992

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Fast switching and storage in GaAs-AlxGa1-xAs heterojunction layers

IEEE electron device letters, 1982-10, Vol.3 (10), p.297-300

1982

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H2Se «Memory effects» upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)

Journal of electronic materials, 1984-05, Vol.13 (3), p.447-461

1984

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Illumination with solid state lighting technology

High-power AlGaInN flip-chip light-emitting diodes

High Power LEDs - Technology Status and Market Applications

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

A study of parasitic reactions between NH3 and TMGa or TMAI

Metalorganic chemical vapor deposition of III-V semiconductors

Hydrogen-decorated lattice defects in proton implanted GaN

An Infant Mortality Study of III-V Multijunction Concentrator Cells

High-Power III-Nitride Emitters for Solid-State Lighting

Low-resistance Ohmic conduction across compound semiconductor wafer-bonded interfaces

High-efficiency InGaN MQW blue and green LEDs

Long wavelength (λ∼1.5 μm) native-oxide-defined InAlAs-InP-InGaAsP quantum well heterostructure laser diodes

High-power semiconductor edge-emitting light-emitting diodes for optical low coherence reflectometry

Stimulated emission in strained-layer quantum-well heterostructures

Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode

Analysis of wafer fusing for 1.3 μm vertical cavity surface emitting lasers

Study of Mg diffusion during metalorganic chemical vapor deposition of GaN and AlGaN

Refractive index and electro-optic effect in compressive and tensile strained quantum wells

Continuous 300-K laser operation of strained superlattices

Correlation of photoluminescence and deep trapping in metalorganic chemical vapor deposited AlxGa1-xAs (0≤x≤0.40)

The growth of Magnesium-doped GaAs by the Om-Vpe process

Theoretical and experimental studies of the effects of compressive and tensile strain on the performance of InP-InGaAs multiquantum-well lasers

Fast switching and storage in GaAs-AlxGa1-xAs heterojunction layers

H2Se «Memory effects» upon doping profiles in GaAs grown by metalorganic chemical vapor deposition (MO-CVD)

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