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Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO2 and GeO2

Jpn J Appl Phys, 2013-04, Vol.52 (4), p.04CH10-04CH10-6

Lucovsky, Gerald

2013

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Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO2, Si3N4, and Si Oxynitride Alloy Thin Films

Jpn J Appl Phys, 2011-04, Vol.50 (4), p.04DC09-04DC09-7

Lucovsky, Gerald

2011

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Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films

Physica status solidi. A, Applications and materials science, 2010-03, Vol.207 (3), p.631-634

Lucovsky, Gerald

2010

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Band edge electronic structure of transition metal/rare earth oxide dielectrics

Applied surface science, 2006-10, Vol.253 (1), p.311-321

Lucovsky, Gerald

2006

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Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n−1 for 9 ≥ n > 3, and TiO2-HfO2 alloys

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.1553-1561

Lucovsky, Gerald

2001

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Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-07, Vol.19 (4), p.1353-1360

2001

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Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses

physica status solidi (b), 2009-08, Vol.246 (8), p.1806-1812

2009

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O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2011-01, Vol.29 (1), p.1

2011

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Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications

Nanoscale research letters, 2010-01, Vol.5 (3), p.550-558

2010

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A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism

Journal of physics. Condensed matter, 2007-11, Vol.19 (45), p.455219-455219 (10)

2007

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Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

Japanese Journal of Applied Physics, 2007-04, Vol.46 (4S), p.1899

2007

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Detection of Multivalency Charge States in Complex and Elemental Transition Metal Oxides by X-ray Absorption Spectroscopy: Controlled Multivalency as a Pathway to Device Functionality

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10), p.10PF04-10PF04-10

2011

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Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

Solid-state electronics, 2013-05, Vol.83, p.30-36

Lucovsky, Gerald

2013

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Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films

Journal of applied physics, 2004-09, Vol.96 (5), p.2674-2680

2004

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Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2001-09, Vol.19 (5), p.2622-2628

2001

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Detection of Multivalency Charge States in Complex and Elemental Transition Metal Oxides by X-ray Absorption Spectroscopy: Controlled Multivalency as a Pathway to Device Functionality

Japanese Journal of Applied Physics, 2011-10, Vol.50 (10S), p.10

2011

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Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO 2 and GeO 2

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4S), p.4

Lucovsky, Gerald

2013

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Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO sub(2) and GeO sub(2)

Japanese Journal of Applied Physics, 2013-04, Vol.52 (4S), p.04CH10-04CH10

Lucovsky, Gerald

2013

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Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO₂ and Related Materials: Device Applications

Nanoscale research letters, 2010, Vol.5 (3), p.550-558

2010

Volltextzugriff (PDF)

Preface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.632-632

Lucovsky, Gerald

2010

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Preface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2010-07, Vol.28 (4), p.632-632

Lucovsky, Gerald

2010

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Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping

Physical review letters, 2007-05, Vol.98 (19), p.196802-196802

2007

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Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates

Journal of nanoscience and nanotechnology, 2011-09, Vol.11 (9), p.7974-7981

2011

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Chemical Bonding Self-Organizations and Percolation Theory Applied to Minimization of Macroscopic Strain: Internal Interfaces in Non-Crystalline and Nano-Crystalline Thin Films

e-Journal of Surface Science and Nanotechnology, 2009/04/04, Vol.7, pp.375-380

2009

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Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO2 and GeO2

Multiplet Theory for Conduction Band Edge and O-Vacancy Defect States in SiO2, Si3N4, and Si Oxynitride Alloy Thin Films

Strain-reducing chemical bonding self-organizations in nanocrystalline composites and non-crystalline glasses and thin films

Band edge electronic structure of transition metal/rare earth oxide dielectrics

Transport through singlet states in resistive memory materials: Magneli-phase, TinO2n−1 for 9 ≥ n > 3, and TiO2-HfO2 alloys

Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition

Symmetry determined medium range order (MRO) contributions to the first sharp diffraction peak (FSDP) in non-crystalline oxide and chalcogenide glasses

O-vacancies in (i) nanocrystalline HfO2 and (i) noncrystalline SiO2 and Si3N4 studied by x-ray absorption spectroscopy

Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO2 and Related Materials: Device Applications

A new class of intermediate phases in non-crystalline films based on a confluent double percolation mechanism

Intrinsic Electronically Active Defects in Transition Metal Elemental Oxides

Detection of Multivalency Charge States in Complex and Elemental Transition Metal Oxides by X-ray Absorption Spectroscopy: Controlled Multivalency as a Pathway to Device Functionality

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2

Surface passivation of n-GaN by nitrided-thin-Ga2O3∕SiO2 and Si3N4 films

Dissociation reactions of hydrogen in remote plasma-enhanced chemical-vapor-deposition silicon nitride

Detection of Multivalency Charge States in Complex and Elemental Transition Metal Oxides by X-ray Absorption Spectroscopy: Controlled Multivalency as a Pathway to Device Functionality

Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO 2 and GeO 2

Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO sub(2) and GeO sub(2)

Nano-regime Length Scales Extracted from the First Sharp Diffraction Peak in Non-crystalline SiO₂ and Related Materials: Device Applications

Preface

Preface

Origin of charge density at LaAlO3 on SrTiO3 heterointerfaces: possibility of intrinsic doping

Remote Plasma Enhanced Chemical Deposition of Non-Crystalline GeO2 on Ge and Si Substrates

Chemical Bonding Self-Organizations and Percolation Theory Applied to Minimization of Macroscopic Strain: Internal Interfaces in Non-Crystalline and Nano-Crystalline Thin Films

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