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Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Materials, 2016-12, Vol.9 (12), p.1007

2016

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Atomic Layer Deposition of a High‑k Dielectric on MoS2 Using Trimethylaluminum and Ozone

ACS applied materials & interfaces, 2014-08, Vol.6 (15), p.11834-11838

2014

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Partially Fluorinated Graphene: Structural and Electrical Characterization

ACS applied materials & interfaces, 2016-02, Vol.8 (7), p.5002-5008

2016

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Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

ACS applied materials & interfaces, 2020-08, Vol.12 (32), p.36688-36694

2020

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Materials, 2020-07, Vol.13 (15), p.3387

2020

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Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

Applied physics letters, 2015-03, Vol.106 (12)

2015

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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Applied physics letters, 2017-12, Vol.111 (24)

2017

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7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

Japanese Journal of Applied Physics, 2016-06, Vol.55 (6S1), p.6-06GK04

2016

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Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Applied physics letters, 2018-04, Vol.112 (17)

2018

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Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices

ACS nano, 2017-10, Vol.11 (10), p.10243-10252

2017

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Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

ACS applied materials & interfaces, 2018-04, Vol.10 (16), p.14116-14123

2018

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Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

ACS applied materials & interfaces, 2018-12, Vol.10 (51), p.44825-44833

2018

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Al Interaction with ZnO Surfaces

Journal of physical chemistry. C, 2018-08, Vol.122 (31), p.17856-17864

2018

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Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors

IEEE sensors journal, 2021-11, Vol.21 (22), p.25675-25686

2021

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Performance Enhancement via Incorporation of ZnO Nanolayers in Energetic Al/CuO Multilayers

Langmuir, 2017-10, Vol.33 (41), p.11086-11093

2017

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Realization of Spatially Addressable Library by a Novel Combinatorial Approach on Atomic Layer Deposition: A Case Study of Zinc Oxide

ACS combinatorial science, 2019-06, Vol.21 (6), p.445-455

2019

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Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

IEEE electron device letters, 2018-08, Vol.39 (8), p.1195-1198

2018

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Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Applied physics letters, 2017-08, Vol.111 (8)

2017

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Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS 2 for Two-Dimensional Material-Based Devices

ACS nano, 2017-10, Vol.11 (10), p.10243-10252

2017

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Basic Mechanisms of Al Interaction with the ZnO Surface

Journal of physical chemistry. C, 2017-06, Vol.121 (23), p.12780-12788

2017

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Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X‑Point Selector

ACS applied electronic materials, 2021-05, Vol.3 (5), p.2309-2316

2021

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Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Japanese Journal of Applied Physics, 2016-06, Vol.55 (8S2)

2016

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In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Electronic materials letters, 2015-09, Vol.11 (5), p.769-774

2015

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Robust SiN x /GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

IEEE electron device letters, 2018-08, Vol.39 (8), p.1195-1198

2018

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Atomic Layer Deposition of a High- k Dielectric on MoS 2 Using Trimethylaluminum and Ozone

ACS applied materials & interfaces, 2014-08, Vol.6 (15), p.11834-11838

2014

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Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Atomic Layer Deposition of a High‑k Dielectric on MoS2 Using Trimethylaluminum and Ozone

Partially Fluorinated Graphene: Structural and Electrical Characterization

Atomic Layer Deposition of Layered Boron Nitride for Large-Area 2D Electronics

Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices

Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Al Interaction with ZnO Surfaces

Ambipolar Gate Modulation Technique for the Reduction of Offset and Flicker Noise in Graphene Hall-Effect Sensors

Performance Enhancement via Incorporation of ZnO Nanolayers in Energetic Al/CuO Multilayers

Realization of Spatially Addressable Library by a Novel Combinatorial Approach on Atomic Layer Deposition: A Case Study of Zinc Oxide

Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS 2 for Two-Dimensional Material-Based Devices

Basic Mechanisms of Al Interaction with the ZnO Surface

Extremely Low Leakage Threshold Switch with Enhanced Characteristics via Ag Doping on Polycrystalline ZnO Fabricated by Facile Electrochemical Deposition for an X‑Point Selector

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

In-situ XPS study of ALD ZnO passivation of p-In0.53Ga0.47As

Robust SiN x /GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

Atomic Layer Deposition of a High- k Dielectric on MoS 2 Using Trimethylaluminum and Ozone

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