UB Paderborn / Katalog / Suche / in CDI

Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si

Journal of applied physics, 2021-01, Vol.129 (1)

2021

Volltextzugriff (PDF)

InP-based quantum cascade lasers monolithically integrated onto silicon

Optics express, 2018-08, Vol.26 (17), p.22389-22393

2018

Volltextzugriff (PDF)

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Journal of applied physics, 2012-11, Vol.112 (9)

2012

Volltextzugriff (PDF)

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Journal of applied physics, 2013-01, Vol.113 (2)

2013

Volltextzugriff (PDF)

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Journal of applied physics, 2012-07, Vol.112 (2)

2012

Volltextzugriff (PDF)

Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

Applied physics letters, 2018-01, Vol.112 (3)

2018

Volltextzugriff (PDF)

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Applied physics letters, 2012-09, Vol.101 (11)

2012

Volltextzugriff (PDF)

Monolithic integration of InP-based transistors on Si substrates using MBE

Journal of crystal growth, 2009-03, Vol.311 (7), p.1979-1983

2009

Volltextzugriff (PDF)

Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors

Applied physics letters, 2012-12, Vol.101 (24)

2012

Volltextzugriff (PDF)

An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch

2015 Symposium on VLSI Technology (VLSI Technology), 2015, p.T176-T177

2015

Volltextzugriff (PDF)

Exciton localization and temperature stability in self-organized InAs quantum dots

Applied physics letters, 1996-01, Vol.68 (2), p.205-207

1996

Volltextzugriff (PDF)

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Applied physics letters, 2011-12, Vol.99 (25), p.251110-251110-3

2011

Volltextzugriff (PDF)

Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

IEEE electron device letters, 2012-11, Vol.33 (11), p.1568-1570

2012

Volltextzugriff (PDF)

Interband cascade infrared photodetectors with enhanced electron barriers and p -type superlattice absorbers

Journal of applied physics, 2012-01, Vol.111 (2), p.024510-024510-6

2012

Volltextzugriff (PDF)

Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Journal of luminescence, 2020-12, Vol.228, p.117581, Article 117581

2020

Volltextzugriff (PDF)

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-05, Vol.22 (3), p.1565-1569

2004

Volltextzugriff (PDF)

Wideband DHBTs using a graded carbon-doped InGaAs base

IEEE electron device letters, 2003-07, Vol.24 (7), p.433-435

2003

Volltextzugriff (PDF)

Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growth

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-05, Vol.23 (3), p.1262-1266

2005

Volltextzugriff (PDF)

High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010, p.1-4

2010

Volltextzugriff (PDF)

Surface phonon observed in GaAs wire crystals grown on porous Si

Journal of physics. Condensed matter, 1998-11, Vol.10 (43), p.9687-9690

1998

Volltextzugriff (PDF)

Auger recombination in heavily carbon-doped GaAs

Applied physics letters, 2001-03, Vol.78 (13), p.1879-1881

2001

Volltextzugriff (PDF)

Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001-07, Vol.19 (4), p.1510-1514

2001

Volltextzugriff (PDF)

Static phase diagrams of reconstructions for MBE-grown GaAs(001) and AlAs(001) surfaces

Thin solid films, 1995-10, Vol.267 (1), p.54-57

1995

Volltextzugriff (PDF)

Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide

Journal of applied physics, 1998-10, Vol.84 (8), p.4281-4284

1998

Volltextzugriff (PDF)

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-05, Vol.20 (3), p.1200-1204

2002

Volltextzugriff (PDF)

Menü

Weitere Dienste

Einstellungen

Investigation of bulk and surface minority carrier lifetimes in metamorphic InAsSb grown on GaAs and Si

InP-based quantum cascade lasers monolithically integrated onto silicon

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Band offset determination of mixed As/Sb type-II staggered gap heterostructure for n-channel tunnel field effect transistor application

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

Structural properties and band offset determination of p-channel mixed As/Sb type-II staggered gap tunnel field-effect transistor structure

Monolithic integration of InP-based transistors on Si substrates using MBE

Combined cross sectional scanning tunneling microscopy and high resolution x-ray diffraction study for quantitative structural descriptions of type-II superlattice infrared detectors

An InGaAs on Si platform for CMOS with 200 mm InGaAs-OI substrate, gate-first, replacement gate planar and FinFETs down to 120 nm contact pitch

Exciton localization and temperature stability in self-organized InAs quantum dots

Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Barrier-Engineered Arsenide-Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

Interband cascade infrared photodetectors with enhanced electron barriers and p -type superlattice absorbers

Photoluminescence spectroscopy of metamorphic InAsSb on GaAs and Si

Comparison of As- and P-based metamorphic buffers for high performance InP heterojunction bipolar transistor and high electron mobility transistor applications

Wideband DHBTs using a graded carbon-doped InGaAs base

Comparative studies of the epireadiness of 4 in. InP substrates for molecular-beam epitaxy growth

High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate

Surface phonon observed in GaAs wire crystals grown on porous Si

Auger recombination in heavily carbon-doped GaAs

Strain relaxation and dislocation filtering in metamorphic high electron mobility transistor structures grown on GaAs substrates

Static phase diagrams of reconstructions for MBE-grown GaAs(001) and AlAs(001) surfaces

Molar fraction and substrate orientation effects on carbon doping in InGaAs grown by solid source molecular beam epitaxy using carbon tetrabromide

Molecular-beam epitaxy production of large-diameter metamorphic high electron mobility transistor and heterojunction bipolar transistor wafers

Suchergebnisse filtern