UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 583

Sortiert nach

Metal gate work function engineering using AlNx interfacial layers

Applied physics letters, 2006-03, Vol.88 (11)

2006

Volltextzugriff (PDF)

Prevention of etomidate-induced myoclonus during anesthetic induction by pretreatment with dexmedetomidine

Brazilian journal of medical and biological research, 2015-02, Vol.48 (2), p.186-190

2015

Volltextzugriff (PDF)

Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric

IEEE electron device letters, 2001-05, Vol.22 (5), p.227-229

2001

Volltextzugriff (PDF)

Temperature dependence of the work function of ruthenium-based gate electrodes

Thin solid films, 2006-12, Vol.515 (4), p.1294-1298

2006

Volltextzugriff (PDF)

Modulation of the work function of silicon gate electrode using thin TaN interlayers

Applied physics letters, 2005-08, Vol.87 (5)

2005

Volltextzugriff (PDF)

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

Microelectronic engineering, 1999-09, Vol.48 (1-4), p.55-58

1999

Volltextzugriff (PDF)

Effect of Repetitive Intracutaneous Injections with Local Anesthetics and Steroids for Acute Thoracic Herpes Zoster and Incidence of Postherpetic Neuralgia

Pain medicine (Malden, Mass.), 2017-08, Vol.18 (8), p.1566-1572

2017

Volltextzugriff (PDF)

Dual-metal gate technology for deep-submicron CMOS transistors

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104), 2000, p.72-73

2000

Volltextzugriff (PDF)

Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric

IEEE electron device letters, 2001-07, Vol.22 (7), p.324-326

2001

Volltextzugriff (PDF)

Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric

2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers, 2006, p.7-8

2006

Volltextzugriff (PDF)

Impact of boron penetration on gate oxide reliability and device lifetime in p +-poly PMOSFETs

Microelectronic engineering, 1997-06, Vol.36 (1), p.313-316

1997

Volltextzugriff (PDF)

Metal gate work function engineering using Al N x interfacial layers

Applied physics letters, 2006-03, Vol.88 (11), p.112114-112114-3

2006

Volltextzugriff (PDF)

Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

MRS proceedings, 1999, Vol.567

1999

Volltextzugriff (PDF)

Modulation of the work function of silicon gate electrode using thinTaN interlayers

Applied physics letters, 2005-07, Vol.87 (5), p.052109-052109-3

2005

Volltextzugriff (PDF)

Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

MRS proceedings, 1999, Vol.567

1999

Volltextzugriff (PDF)

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Applied physics letters, 2001-02, Vol.78 (8), p.1134-1136

2001

Volltextzugriff (PDF)

Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

MRS proceedings, 1999, Vol.567, Article 65

1999

Volltextzugriff (PDF)

Large-scale systematic study on stability of the Ds element and timing of transposition in rice [Oryza sativa]

Plant and cell physiology, 2006-01, Vol.47 (1), p.84-95

2006

Volltextzugriff (PDF)

Ultra thin (<3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing

International Electron Devices Meeting. IEDM Technical Digest, 1997, p.463-466

1997

Volltextzugriff (PDF)

Two silicon nitride technologies for post-SiO(2) MOSFETgate dielectric

IEEE electron device letters, 2001-07, Vol.22 (7), p.324-326

2001

Volltextzugriff (PDF)

Two silicon nitride technologies for post-SiO sub(2) MOSFET gate dielectric

IEEE electron device letters, 2001-07, Vol.22 (7), p.324-326

2001

Volltextzugriff (PDF)

日粮中新鲜发酵豆粕对保育猪生长性能、氨气和颗粒物排放以及氮排泄的影响（英文）

浙江大学学报：B卷英文版, 2017 (12), p.1083-1092

Sai-sai CHENG Yuan LI Shi-jie GENG Luan-sha HU Xiong-feng FU Xin-yan HAN

2017

Volltextzugriff (PDF)

High-k gate dielectrics for sub-100 nm CMOS technology

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.1, p.303-308 vol.1

2001

Volltextzugriff (PDF)

High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process

MRS proceedings, 1999, Vol.567

1999

Volltextzugriff (PDF)

Ultrathin TiO 2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

MRS proceedings, 1999, Vol.567, Article 481

1999

Volltextzugriff (PDF)

1 – 25 von 583

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(509)
Mit Volltextzugriff
(494)

Publikationsform

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(447)
Life Sciences & Biomedicine
(266)
Humans
(170)
Technology
(110)
Physical Sciences
(106)
Male
(103)
Female
(100)
Biological And Medical Sciences
(62)
Animals
(61)
Middle Aged
(58)
Materials Science
(55)
Exact Sciences And Technology
(51)
Chemistry
(50)
Materials Science, Multidisciplinary
(50)
Physics
(49)
Adult
(47)
Medical Sciences
(45)
Engineering
(44)
Genetics & Heredity
(42)
Medicin Och Hälsovetenskap
(41)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(3)

Menü

Weitere Dienste

Einstellungen

Metal gate work function engineering using AlNx interfacial layers

Prevention of etomidate-induced myoclonus during anesthetic induction by pretreatment with dexmedetomidine

Dual-metal gate CMOS technology with ultrathin silicon nitride gate dielectric

Temperature dependence of the work function of ruthenium-based gate electrodes

Modulation of the work function of silicon gate electrode using thin TaN interlayers

Ultra thin high quality stack nitride/oxide gate dielectrics prepared by in-situ rapid thermal N2O oxidation of NH3-nitrided Si

Effect of Repetitive Intracutaneous Injections with Local Anesthetics and Steroids for Acute Thoracic Herpes Zoster and Incidence of Postherpetic Neuralgia

Dual-metal gate technology for deep-submicron CMOS transistors

Two silicon nitride technologies for post-SiO2 MOSFET gate dielectric

Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric

Impact of boron penetration on gate oxide reliability and device lifetime in p +-poly PMOSFETs

Metal gate work function engineering using Al N x interfacial layers

Ultrathin TiO2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

Modulation of the work function of silicon gate electrode using thinTaN interlayers

Ultra Thin High Quality Ta2O5 Gate Dielectrics Prepared by In-situ Rapid Thermal Processing

Characterization of RuO2 electrodes on Zr silicate and ZrO2 dielectrics

Formation of High Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

Large-scale systematic study on stability of the Ds element and timing of transposition in rice [Oryza sativa]

Ultra thin (<3 nm) high quality nitride/oxide stack gate dielectrics fabricated by in-situ rapid thermal processing

Two silicon nitride technologies for post-SiO(2) MOSFETgate dielectric

Two silicon nitride technologies for post-SiO sub(2) MOSFET gate dielectric

日粮中新鲜发酵豆粕对保育猪生长性能、氨气和颗粒物排放以及氮排泄的影响（英文）

High-k gate dielectrics for sub-100 nm CMOS technology

High Quality Ultra Thin CVD Si3N4Gate Dielectrics Fabricated By Rapid Thermal Process

Ultrathin TiO 2 Gate Dielectric Formation by Annealing of Sputtered Ti on Nitrogen Passivated Si Substrates in Nitric Oxide Ambient

Suchergebnisse filtern