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Bioinformatics analysis for the identification of Sprouty-related EVH1 domain-containing protein 3 expression and its clinical significance in thyroid carcinoma

Scientific reports, 2024-02, Vol.14 (1), p.4549-4549, Article 4549

2024

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Partial organic substitution for synthetic fertilizer improves soil fertility and crop yields while mitigating N2O emissions in wheat-maize rotation system

European journal of agronomy, 2024-03, Vol.154, p.127077, Article 127077

2024

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Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width

Chinese physics letters, 2020-04, Vol.37 (4), p.44203

2020

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How to choose kinematic or mechanical alignment individually according to preoperative characteristics of patients?

BMC musculoskeletal disorders, 2020-07, Vol.21 (1), p.443-443, Article 443

2020

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Association of PAR-2 Gene Polymorphisms with the Inflammatory Response and Susceptibility to Knee Osteoarthritis in the Chinese Han Population

Genetic testing and molecular biomarkers, 2019-02, Vol.23 (2), p.84-90

2019

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Effect of electrode materials and annealing on metal-semiconductor contact of Ga2O3 with metal

Optoelectronics letters, 2020-03, Vol.16 (2), p.118-121

2020

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Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2016-12, Vol.30 (35), p.1650411

2016

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Effects of GaN cap layer thickness on an AlN/GaN heterostructure

Chinese physics B, 2014-12, Vol.23 (12), p.127104-1-127104-4

2014

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Aptamer-based Fluorescence Resonance Energy Transfer Method for Determination of Estradiol

Fēnxī huàxué, 2014-09, Vol.42 (9), p.1295-1300

2014

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Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

Chinese physics B, 2013-06, Vol.22 (6), p.530-535

于英霞林兆军栾崇彪王玉堂陈弘王占国

2013

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A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

Chinese physics B, 2012-09, Vol.21 (9), p.097104-1-097104-4

2012

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Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

Chinese physics B, 2011-09, Vol.20 (9), p.097106-jQuery1323921846770='48'

2011

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Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts

Chinese physics B, 2011-04, Vol.20 (4), p.430-434

吕元杰林兆军张宇孟令国曹芝芳栾崇彪陈弘王占国

2011

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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Chinese physics B, 2012, Vol.21 (1), p.414-418

曹芝芳林兆军吕元杰栾崇彪于英霞陈弘王占国

2012

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Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Chinese physics B, 2014-02, Vol.23 (2), p.27102-1-027102-5

2014

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Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

Chinese physics B, 2013-04, Vol.22 (4), p.394-398

曹芝芳林兆军吕元杰栾崇彪王占国

2013

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Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width Supported by the Rector's Fund of China Academy of Engineering Physics (Grant No. YZJJLX2016002), and the National Natural Science Foundation of China (Grant Nos. 61504127 and U1530128)

Chinese physics letters, 2020-04, Vol.37 (4)

2020

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Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Chinese physics B, 2013-06, Vol.22 (6), p.67104-1-067104-4

2013

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Establishment of a rapid and effective plate chromogenic assay for screening of Aspergillus species with high β-fructofuranosidase activity for fructooligosaccharides production

Journal of microbiological methods, 2019-11, Vol.166, p.105740-105740, Article 105740

2019

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Partial organic substitution increases soil quality and crop yields but promotes global warming potential in a wheat-maize rotation system in China

Soil & tillage research, 2024-12, Vol.244, p.106274, Article 106274

2024

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A Fluoroimmunoassay Method Using Quantum Dot Labels for Detection of Melamine

Advanced materials research, 2014-06, Vol.955-959, p.1484-1490

Luan, Chong Lin

2014

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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In sub(0.18)Al sub(0.82)N/AlN/GaN heterostructure field-effect transistors

Chinese physics B, 2014-04, Vol.23 (4), p.047201-1-047201-5

2014

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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors

Chinese physics B, 2014-04, Vol.23 (4), p.47201

2014

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Microstructure and corrosion behavior of Zr-1.0Cr-0.4Fe-xMo alloys

Rare metals, 2015-02, Vol.34 (2), p.118-124

2015

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Behavior of pure and modified carbon/carbon composites in atomic oxygen environment

International journal of minerals, metallurgy and materials, 2014-02, Vol.21 (2), p.190-195

2014

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Bioinformatics analysis for the identification of Sprouty-related EVH1 domain-containing protein 3 expression and its clinical significance in thyroid carcinoma

Partial organic substitution for synthetic fertilizer improves soil fertility and crop yields while mitigating N2O emissions in wheat-maize rotation system

Influence of Hot-Carriers on the On-State Resistance in Si and GaAs Photoconductive Semiconductor Switches Working at Long Pulse Width

How to choose kinematic or mechanical alignment individually according to preoperative characteristics of patients?

Association of PAR-2 Gene Polymorphisms with the Inflammatory Response and Susceptibility to Knee Osteoarthritis in the Chinese Han Population

Effect of electrode materials and annealing on metal-semiconductor contact of Ga2O3 with metal

Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors

Effects of GaN cap layer thickness on an AlN/GaN heterostructure

Aptamer-based Fluorescence Resonance Energy Transfer Method for Determination of Estradiol

Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor

A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

Influence of thermal stress on the relative permittivity of the AlGaN barrier layer in an AlGaN/GaN heterostructure Schottky contacts

Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts

Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Establishment of a rapid and effective plate chromogenic assay for screening of Aspergillus species with high β-fructofuranosidase activity for fructooligosaccharides production

Partial organic substitution increases soil quality and crop yields but promotes global warming potential in a wheat-maize rotation system in China

A Fluoroimmunoassay Method Using Quantum Dot Labels for Detection of Melamine

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In sub(0.18)Al sub(0.82)N/AlN/GaN heterostructure field-effect transistors

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors

Microstructure and corrosion behavior of Zr-1.0Cr-0.4Fe-xMo alloys

Behavior of pure and modified carbon/carbon composites in atomic oxygen environment

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