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Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

Applied physics letters, 2022-10, Vol.121 (15)

2022

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A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Applied physics letters, 2023-02, Vol.122 (7)

2023

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Research on transient thermal behavior of semiconductor lasers under pulse current excitation by thermoreflection technique

Optics communications, 2022-10, Vol.521, p.128540, Article 128540

2022

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Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

IEEE transactions on electron devices, 2023-07, Vol.70 (7), p.3475-3482

2023

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FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors

Journal of physics. Conference series, 2023-06, Vol.2524 (1), p.12018

2023

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Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Journal of physics. Conference series, 2023-06, Vol.2524 (1), p.12009

2023

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Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

IEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4877-4882

2022

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A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

IEEE transactions on instrumentation and measurement, 2024, Vol.73, p.1-12

2024

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Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

IEEE transactions on electron devices, 2021-08, Vol.68 (8), p.3968-3973

2021

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In-situ Thermal resistance measurement of GaN HEMTs

Journal of physics. Conference series, 2024-09, Vol.2849 (1), p.12050

2024

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Automatic in-situ measurement of thermal resistance for GaN HEMTs

Microelectronics, 2024-07, Vol.149, p.106245, Article 106245

2024

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Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5541-5546

2021

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Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Semiconductor science and technology, 2022-09, Vol.37 (9), p.95017

2022

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Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Semiconductor science and technology, 2021-09, Vol.36 (9), p.95011

2021

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Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

Optics and laser technology, 2022-09, Vol.153, p.108203, Article 108203

2022

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Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Journal of semiconductors, 2024-09, Vol.45 (9), p.92503

2024

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A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

Microelectronics, 2023-05, Vol.135, p.105742, Article 105742

2023

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Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing

2024 4th International Conference on Electronic Materials and Information Engineering (EMIE), 2024, p.15-18

2024

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Opening time and filling pattern of the Neoproterozoic Kangdian Rift Basin, western Yangtze Continent, South China

Science China. Earth sciences, 2013-10, Vol.56 (10), p.1664-1676

2013

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Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

IEEE transactions on device and materials reliability, 2023-06, Vol.23 (2), p.1-1

2023

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Prevalence and genetic analysis of thalassemia in childbearing age population of Hainan, The Free Trade Island in Southern China

Journal of clinical laboratory analysis, 2022-03, Vol.36 (3), p.e24260-n/a

2022

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Bone‐Targeting and Multishelled Oral Eldecalcitol Nanoparticles Improve Osteoporosis by Reconstruction of Osteogenic‐Osteoclastic Homeostasis

Advanced functional materials, 2024-10, Vol.34 (44), p.n/a

2024

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Recent developments in stimuli‐responsive hydrogels for biomedical applications

Biosurface and biotribology, 2022-11, Vol.8 (4), p.290-306

2022

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Plant-inspired visible-light-driven bioenergetic hydrogels for chronic wound healing

Bioactive materials, 2024-11, Vol.41, p.523-536

2024

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USP29 activation mediated by FUBP1 promotes AURKB stability and oncogenic functions in gastric cancer

Cancer cell international, 2024-01, Vol.24 (1), p.33-33, Article 33

2024

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Characterization of hole traps in reverse-biased Schottky-type p-GaN gate HEMTs by current-transient method

A thermal boundary resistance measurement method based on a designed chip with the heat source separated from the temperature sensor

Research on transient thermal behavior of semiconductor lasers under pulse current excitation by thermoreflection technique

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors

Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage

Identification of Traps in p-GaN Gate HEMTs During OFF-State Stress by Current Transient Method

A Trap Characterization System for GaN HEMTs Based on Transient Drain Voltage

Analysis of the Effects of High-Energy Electron Irradiation of GaN High-Electron-Mobility Transistors Using the Voltage-Transient Method

In-situ Thermal resistance measurement of GaN HEMTs

Automatic in-situ measurement of thermal resistance for GaN HEMTs

Identifying the Properties of Traps in GaN High-Electron-Mobility Transistors via Amplitude Analysis Based on the Voltage-Transient Method

Characterization of traps in GaN-based HEMTs by drain voltage transient and capacitance deep-level transient spectroscopy

Effects of gamma irradiation on GaN high-electron-mobility transistors characterized by the voltage-transient method

Research on temperatures located within facet coating layers along z-axis of semiconductor lasers

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

A numerical calibration of structure-function transient thermal measurement based on Cauer RC network

Power Cycling and Research on Failure Mechanism of Press-Pack IGBT based on Thermal Resistance Composition Testing

Opening time and filling pattern of the Neoproterozoic Kangdian Rift Basin, western Yangtze Continent, South China

Analysis of the Degradation of Depletion-Mode GaN High-Electron-Mobility Transistors under Reverse Pulse Electrical Stress Using the Voltage-Transient Method

Prevalence and genetic analysis of thalassemia in childbearing age population of Hainan, The Free Trade Island in Southern China

Bone‐Targeting and Multishelled Oral Eldecalcitol Nanoparticles Improve Osteoporosis by Reconstruction of Osteogenic‐Osteoclastic Homeostasis

Recent developments in stimuli‐responsive hydrogels for biomedical applications

Plant-inspired visible-light-driven bioenergetic hydrogels for chronic wound healing

USP29 activation mediated by FUBP1 promotes AURKB stability and oncogenic functions in gastric cancer

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