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Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping

Applied physics letters, 2013-09, Vol.103 (14)

2013

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Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN

Applied physics letters, 2021-08, Vol.119 (6)

2021

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High efficiency thin film GaInP/GaAs/InGaAs inverted metamorphic (IMM) solar cells based on electroplating process

Journal of crystal growth, 2019-05, Vol.513, p.38-42

2019

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The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film

Materials, 2023-02, Vol.16 (4), p.1730

2023

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Electrical and Optical Properties of Beryllium Deep Acceptors in GaN

Journal of electronic materials, 2020-12, Vol.49 (12), p.7472-7478

2020

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The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics

Journal of applied physics, 2017-12, Vol.122 (22)

2017

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Quantitative measurement of the charge carrier concentration using dielectric force microscopy

Chinese physics B, 2023-03, Vol.32 (3), p.37202-516

2023

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Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector

Applied physics letters, 2015-06, Vol.106 (26)

2015

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Realize low-power artificial photonic synapse based on (Al,Ga)N nanowire/graphene heterojunction for neuromorphic computing

APL photonics, 2023-07, Vol.8 (7), p.076107-076107-9

2023

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Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering

Crystals (Basel), 2022-12, Vol.12 (12), p.1810

2022

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Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

Journal of semiconductors, 2022-12, Vol.43 (12), p.122101-39

2022

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Effects of Plasmonic Au Nanoparticles on the Optical Nonlinearity of InAs/GaAs Quantum Dot Semiconductor Saturable Absorber Mirrors

Photonics, 2024-03, Vol.11 (3), p.235

2024

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Conversion efficiencies of single-junction III-V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission

Japanese Journal of Applied Physics, 2018-08, Vol.57 (8S3), p.8

2018

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Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE

Solar energy materials and solar cells, 2017-11, Vol.171, p.118-122

2017

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The investigation of wafer-bonded multi-junction solar cell grown by MBE

Journal of crystal growth, 2019-06, Vol.515, p.16-20

2019

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Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Crystals (Basel), 2021-12, Vol.11 (12), p.1590

2021

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Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene

Chinese physics B, 2021-07, Vol.30 (7), p.78506-737

2021

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Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

Fundamental research (Beijing), 2024-03, Vol.4 (2), p.369-378

2024

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Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics (Berlin, Germany), 2018, Vol.7 (9), p.1557-1562

2018

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A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication

Nanomaterials (Basel, Switzerland), 2021-11, Vol.11 (11), p.2959

2021

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Accelerated aging of unencapsulated flexible GaInP/GaAs/InGaAs solar cells by means of damp heat and thermal cycling tests

Heliyon, 2023-06, Vol.9 (6), p.e16462-e16462, Article e16462

2023

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SiO2 Passivated Graphene Saturable Absorber Mirrors for Ultrashort Pulse Generation

Nanomaterials (Basel, Switzerland), 2023-01, Vol.13 (1), p.111

2023

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Subcells Analysis of Thin‐Film Four‐Junction Solar Cells Using Optoelectronic Reciprocity Relation

Solar RRL, 2021-03, Vol.5 (3), p.n/a

2021

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Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Nanomaterials (Basel, Switzerland), 2023-04, Vol.13 (8), p.1346

2023

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Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

Nanomaterials (Basel, Switzerland), 2023-01, Vol.13 (2), p.359

2023

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Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping

Bidirectional negative differential resistance in AlN/GaN resonant tunneling diodes grown on freestanding GaN

High efficiency thin film GaInP/GaAs/InGaAs inverted metamorphic (IMM) solar cells based on electroplating process

The Effect of Periodic Duty Cyclings in Metal-Modulated Epitaxy on GaN:Mg Film

Electrical and Optical Properties of Beryllium Deep Acceptors in GaN

The influence of Sb content and dots size of InAs/GaAs(1-x)Sbx quantum dot on type I-type II band alignment and carrier dynamics

Quantitative measurement of the charge carrier concentration using dielectric force microscopy

Impact of band structure of Ohmic contact layers on the response feature of p-i-n very long wavelength type II InAs/GaSb superlattice photodetector

Realize low-power artificial photonic synapse based on (Al,Ga)N nanowire/graphene heterojunction for neuromorphic computing

Effect of Growth Temperature on Crystallization of Ge1−xSnx Films by Magnetron Sputtering

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

Effects of Plasmonic Au Nanoparticles on the Optical Nonlinearity of InAs/GaAs Quantum Dot Semiconductor Saturable Absorber Mirrors

Conversion efficiencies of single-junction III-V solar cells based on InGaP, GaAs, InGaAsP, and InGaAs for laser wireless power transmission

Electron irradiation study of room-temperature wafer-bonded four-junction solar cell grown by MBE

The investigation of wafer-bonded multi-junction solar cell grown by MBE

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy

Dual-wavelength ultraviolet photodetector based on vertical (Al,Ga)N nanowires and graphene

Flexible bidirectional self-powered photodetector with significantly reduced volume and accelerated response speed based on hydrogel and lift-off GaN-based nanowires

Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

A Self-Powered Transparent Photodetector Based on Detached Vertical (In,Ga)N Nanowires with 360° Omnidirectional Detection for Underwater Wireless Optical Communication

Accelerated aging of unencapsulated flexible GaInP/GaAs/InGaAs solar cells by means of damp heat and thermal cycling tests

SiO2 Passivated Graphene Saturable Absorber Mirrors for Ultrashort Pulse Generation

Subcells Analysis of Thin‐Film Four‐Junction Solar Cells Using Optoelectronic Reciprocity Relation

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Detach GaN-Based Film to Realize a Monolithic Bifunctional Device for Both Lighting and Detection

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