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Continuous Improvements and Future Challenges of Air Pollution Control at an Advanced Semiconductor Fab

Aerosol and Air Quality Research, 2023-05, Vol.23 (5), p.230034

2023

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Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3167-3173

2017

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IEEE_Xplore

Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors

IEEE electron device letters, 2017-03, Vol.38 (3), p.334-337

2017

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IEEE_Xplore

Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide

IEEE electron device letters, 2016-12, Vol.37 (12), p.1578-1581

2016

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IEEE_Xplore

Achieving a foldable and durable OLED display with BT.2020 color space using innovative color filter structure

Journal of the Society for Information Display, 2017-04, Vol.25 (4), p.229-239

2017

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Performance improvement of blue quantum dot light-emitting diodes by facilitating electron transportation and suppressing electroplex emission

Chemical engineering journal (Lausanne, Switzerland : 1996), 2021-08, Vol.417, p.127983, Article 127983

2021

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Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors

ACS applied materials & interfaces, 2017-04, Vol.9 (13), p.11942-11949

2017

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62-2: Novel Thin Film Encapsulation Structure for Wearable Plastic AMOLED Display

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.841-843

2016

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Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Journal of display technology, 2015-06, Vol.11 (6), p.506-511

2015

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IEEE_Xplore

Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DF05-5

2015

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Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

ACS applied materials & interfaces, 2018-08, Vol.10 (31), p.25866-25870

2018

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4.2: Study of ACF Bonding Technology in Flexible Display Module Packages

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.12-15

2015

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69.3: a-IGZO TFTs Reliability Improvement by Dual Gate Structure

SID International Symposium Digest of technical papers, 2015-06, Vol.46 (1), p.1203-1205

2015

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65‐4: Investigation on Blue Quantum‐Dot Light‐Emitting Diode with Positive Aging Treatment

SID International Symposium Digest of technical papers, 2021-05, Vol.52 (1), p.957-958

2021

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65‐3: Green Top‐emission Quantum Dot Light‐emitting Diodes (TE‐QLED) with Normal and Inverted Structure

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.968-970

2020

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Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

Journal of alloys and compounds, 2015-09, Vol.643, p.S187-S192

2015

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41‐3: 17.3 Inch UHD Resolution AMOLED Panel Fabricated by Ink Jet Printing Process

SID International Symposium Digest of technical papers, 2020-08, Vol.51 (1), p.595-598

2020

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P‐120: Degradation Mechanism and Lifetime Improvement of Blue Quantum‐Dot Light‐Emitting Diodes

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.1700-1701

2019

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P‐168: Picture Quality and Uniformity Study on High Resolution Top Emission OLED Display Fabricated by Ink Jet Printing Process

SID International Symposium Digest of technical papers, 2019-06, Vol.50 (1), p.1870-1872

2019

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21.3: A 65-inch Amorphous Oxide Thin Film Transistors Active-Matrix Organic Light-Emitting Diode Television Using Side by Side and Fine Metal Mask Technology

SID International Symposium Digest of technical papers, 2013-06, Vol.44 (1), p.247-250

2013

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P‐108: Positive Aging Mechanisms for High‐efficiency Blue Quantum Dot Light‐emitting Diodes

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.1622-1624

2018

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47‐2: Invited Paper: Highly Transparent AMOLED for Augmented Reality Applications

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.621-623

2018

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9.3: A 32-inch Active-Matrix Organic Light-Emitting Diode Television Panel Driving by Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

SID International Symposium Digest of technical papers, 2012-06, Vol.43 (1), p.92-94

2012

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47‐3: High Efficiency and High PPI AMOLED with Cavity Tuned by Inkjet Printed Hole Injection Layer

SID International Symposium Digest of technical papers, 2018-05, Vol.49 (1), p.624-626

2018

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24-5L: Late-News Paper: Ultra Durable and Foldable AMOLED Display Capable of Withstanding One Million Folding Cycles

SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.305-307

2016

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Continuous Improvements and Future Challenges of Air Pollution Control at an Advanced Semiconductor Fab

Systematic Analysis of High-Current Effects in Flexible Polycrystalline-Silicon Transistors Fabricated on Polyimide

Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors

Effect of SiO2 Buffer Layer Thickness on Performance and Reliability of Flexible Polycrystalline Silicon TFTs Fabricated on Polyimide

Achieving a foldable and durable OLED display with BT.2020 color space using innovative color filter structure

Performance improvement of blue quantum dot light-emitting diodes by facilitating electron transportation and suppressing electroplex emission

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors

62-2: Novel Thin Film Encapsulation Structure for Wearable Plastic AMOLED Display

Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications

Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors

4.2: Study of ACF Bonding Technology in Flexible Display Module Packages

69.3: a-IGZO TFTs Reliability Improvement by Dual Gate Structure

65‐4: Investigation on Blue Quantum‐Dot Light‐Emitting Diode with Positive Aging Treatment

65‐3: Green Top‐emission Quantum Dot Light‐emitting Diodes (TE‐QLED) with Normal and Inverted Structure

Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors

41‐3: 17.3 Inch UHD Resolution AMOLED Panel Fabricated by Ink Jet Printing Process

P‐120: Degradation Mechanism and Lifetime Improvement of Blue Quantum‐Dot Light‐Emitting Diodes

P‐168: Picture Quality and Uniformity Study on High Resolution Top Emission OLED Display Fabricated by Ink Jet Printing Process

21.3: A 65-inch Amorphous Oxide Thin Film Transistors Active-Matrix Organic Light-Emitting Diode Television Using Side by Side and Fine Metal Mask Technology

P‐108: Positive Aging Mechanisms for High‐efficiency Blue Quantum Dot Light‐emitting Diodes

47‐2: Invited Paper: Highly Transparent AMOLED for Augmented Reality Applications

9.3: A 32-inch Active-Matrix Organic Light-Emitting Diode Television Panel Driving by Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

47‐3: High Efficiency and High PPI AMOLED with Cavity Tuned by Inkjet Printed Hole Injection Layer

24-5L: Late-News Paper: Ultra Durable and Foldable AMOLED Display Capable of Withstanding One Million Folding Cycles

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