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Sonochemical synthesis of monosized spherical BaTiO3 particles

Powder technology, 2006-02, Vol.161 (3), p.185-189

2006

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Sonochemical synthesis of monosized spherical BaTiO 3 particles

Powder technology, 2006, Vol.161 (3), p.185-189

2006

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Solar-blind ultraviolet band-pass filter based on metal-dielectric multilayer structures

Chinese physics B, 2014-07, Vol.23 (7), p.404-408

2014

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ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

IEEE electron device letters, 2020-07, Vol.41 (7), p.1052-1055

2020

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A 1100＋ V A1GaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination

Chinese physics letters, 2011, Vol.28 (1), p.182-185

CAO Dong-Sheng LU Hai CHEN Dun-Jun HAN Ping ZHANG Rong ZHENG You-Dou

2011

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An ultra-sensitive and selective nitrogen dioxide sensor based on a novel P2C2 monolayer from a theoretical perspective

Nanoscale, 2018-12, Vol.10 (46), p.21936-21943

2018

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A Reusable and High Sensitivity Nitrogen Dioxide Sensor Based on Monolayer SnSe

IEEE electron device letters, 2018-04, Vol.39 (4), p.599-602

2018

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High-Gain AlGaN Solar-Blind Avalanche Photodiodes

IEEE electron device letters, 2014-03, Vol.35 (3), p.372-374

2014

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Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

IEEE electron device letters, 2020-03, Vol.41 (3), p.469-472

2020

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V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

IEEE electron device letters, 2021-10, Vol.42 (10), p.1508-1511

2021

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Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxy

Journal of crystal growth, 2019-01, Vol.506, p.30-35

2019

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Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes

IEEE photonics technology letters, 2013-08, Vol.25 (15), p.1510-1513

2013

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Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes

Chinese physics letters, 2020-06, Vol.37 (6), p.68502

2020

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Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

Chinese physics letters, 2015-12, Vol.32 (12), p.163-166

刘飞周东陆海陈敦军任芳芳张荣郑有炓

2015

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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

Chinese physics B, 2019-10, Vol.28 (10), p.107301

2019

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Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

Chinese physics letters, 2015-04, Vol.32 (4), p.47302-1-047302-4

2015

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Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

Chinese physics letters, 2015-08, Vol.32 (8), p.196-199

刘飞杨森周东陆海张荣郑有炓

2015

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High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions

Chinese physics letters, 2017-01, Vol.34 (1), p.18502

2017

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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

Chinese physics B, 2014-09, Vol.23 (9), p.97308-1-097308-5, Article 97308

2014

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Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

Chinese physics B, 2013-04, Vol.22 (4), p.500-503

江蓉陆海陈敦军任芳芳闫大为张荣郑有炓

2013

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Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

Chinese physics letters, 2015-09, Vol.32 (9), p.145-148

柴旭朝周东刘斌谢自力韩平修向前陈鹏陆海张荣郑有炓

2015

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An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

Chinese physics B, 2017-03, Vol.26 (3), p.38503

2017

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Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

Chinese physics B, 2015-08, Vol.24 (8), p.619-623

汤兰凤于广陆海武辰飞钱慧敏周东张荣郑有炓黄晓明

2015

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High Deep-Ultraviolet Quantum Efficiency GaN P—I—N Photodetectors with Thin P-GaN Contact Layer

Chinese physics letters, 2013-01, Vol.30 (1), p.17302-1-017302-3

2013

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Forward Current Transport Mechanisms of Ni/Au-InAlN/AlN/GaN Schottky Diodes

Chinese physics letters, 2014-05, Vol.31 (5), p.140-143

王晓风邵振广陈敦军陆海张荣郑有炓

2014

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Sonochemical synthesis of monosized spherical BaTiO3 particles

Sonochemical synthesis of monosized spherical BaTiO 3 particles

Solar-blind ultraviolet band-pass filter based on metal-dielectric multilayer structures

ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

A 1100＋ V A1GaN/GaN-Based Planar Schottky Barrier Diode without Edge Termination

An ultra-sensitive and selective nitrogen dioxide sensor based on a novel P2C2 monolayer from a theoretical perspective

A Reusable and High Sensitivity Nitrogen Dioxide Sensor Based on Monolayer SnSe

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

V T Shift and Recovery Mechanisms of p-GaN Gate HEMTs Under DC/AC Gate Stress Investigated by Fast Sweeping Characterization

Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted–molecular beam epitaxy

Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes

Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes

Passive Quenching Electronics for Geiger Mode 4H-SiC Avalanche Photodiodes

Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

Frequency Performance of Ring Oscillators Based on a-IGZO Thin-Film Transistors

Discrimination Voltage and Overdrive Bias Dependent Performance Evaluation of Passively Quenched SiC Single-Photon-Counting Avalanche Photodiodes

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions

Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate

Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes

Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN

An improved design for AlGaN solar-blind avalanche photodiodes with enhanced avalanche ionization

Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress

High Deep-Ultraviolet Quantum Efficiency GaN P—I—N Photodetectors with Thin P-GaN Contact Layer

Forward Current Transport Mechanisms of Ni/Au-InAlN/AlN/GaN Schottky Diodes

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