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Features of a zone thermal crystallization semiconductor thin films grown from a discrete liquid source

Journal of physics. Conference series, 2018-12, Vol.1124 (2), p.22015

2018

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Manifestations of induced instability of phase boundaries during thermomigration

Technical physics letters, 2016-10, Vol.42 (10), p.1045-1048

2016

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Thermomigration Kinetics in the Si–Al–Ga and Si–Al–Sn Systems

Inorganic materials, 2018-01, Vol.54 (1), p.32-36

2018

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Germanium layers grown by zone thermal crystallization from a discrete liquid source

Journal of physics. Conference series, 2017-11, Vol.917 (3), p.32008

2017

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Crystal defects in solar cells produced by the method of thermomigration

Semiconductors (Woodbury, N.Y.), 2017-03, Vol.51 (3), p.285-289

2017

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Effect of growth conditions on formation of grain boundaries in epitaxial silicon layers

Crystallography reports, 2002-03, Vol.47 (2), p.340-344

2002

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Sorption vacuumization of a growth cell during zone sublimation recrystallization

Technical physics letters, 2013-02, Vol.39 (2), p.175-178

2013

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Diffusion in quasi-one-dimensional nano- and microobjects

Technical physics letters, 2011-11, Vol.37 (11), p.1078-1081

2011

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Formation and use of positioning marks in scanning probe microscopy

Technical physics letters, 2010-08, Vol.36 (8), p.737-738, Article 737

2010

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Temperature gradient zone melting

Progress in crystal growth and characterization, 1983, Vol.6 (1), p.1-23

1983

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Liquid-solid interface stability

Progress in crystal growth and characterization, 1986, Vol.13 (3), p.145-162

1986

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Isothermal liquid phase epitaxy

Progress in crystal growth and characterization, 1983, Vol.6 (1), p.47-57

1983

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Variable-gap Al x Ga 1– x As heterostructure for an electron-beam-pumped laser

Soviet journal of quantum electronics, 1987-09, Vol.17 (9), p.1155-1156

1987

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Variable-gap AlxGa1–xAs heterostructure for an electron-beam-pumped laser

Soviet journal of quantum electronics, 1987-09, Vol.17, p.1155

1987

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Theory of entrapped liquid motion under a temperature-gradient action

Soviet Physics Journal, 1971-12, Vol.14 (12), p.1623-1627

Lozovskii, V. N.

1971

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Mutual Diffusion Coefficient in an Associated Silicon--Platinum Solution

Russ. J. Phys. Chem, 1988-03, Vol.62 (3), p.425-426

1988

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Calculational method for isoparametric compositions and the width of the forbidden band of five-component solid solutions based on AIII BV compounds

Soviet Physics Journal, 1989-07, Vol.32 (7), p.537-542

1989

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Consistency of crystal-lattice parameters and thermalexpansion coefficients in five-component heterostructures based on compounds AIIIBV

Soviet Physics Journal, 1989-01, Vol.32 (1), p.49-53

1989

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The Influence of the Variation of Temperature Along the Liquidus Line on the Mutual Diffusion Coefficient in the Silicon--Aluminium and Silicon--Copper Systems

Russ. J. Phys. Chem, 1986-11, Vol.60 (11), p.1719-1720

1986

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Growth of silicon from a layer of moving solvent enriched with rare earth metals

Soviet Physics Journal, 1982-01, Vol.25 (1), p.11-14

1982

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Growing silicon epitaxial layers from a Si-Ga melt by the moving solvent method

Soviet Physics Journal, 1984-11, Vol.27 (11), p.974-976

1984

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Diffusion of Silicon and Germanium in Liquid Gold

Russ. J. Phys. Chem, 1983-06, Vol.57 (6), p.947-948

1983

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Nature of the white phases and of the hardening of steel with seizing under vibrational conditions and with the presence of a lubricating medium

Soviet Materials Science, 1976-11, Vol.10 (6), p.641-644

1976

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Growth kinetics of epitaxial layers of gallium phosphide by temperature-gradient zone recrystallization

Soviet Physics Journal, 1974-07, Vol.17 (7), p.1002-1005

1974

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ChemInform Abstract: KONZENTRATIONSABHAENGIGKEIT DER BEWEGUNGSGESCHWINDIGKEIT EINER ZONE DER ZUSAMMENSETZUNG SI‐AL‐AU BEIM ZONENSCHMELZEN MIT TEMPERATURGRADIENTEN

Chemischer Informationsdienst, 1973-03, Vol.4 (11)

1973

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Features of a zone thermal crystallization semiconductor thin films grown from a discrete liquid source

Manifestations of induced instability of phase boundaries during thermomigration

Thermomigration Kinetics in the Si–Al–Ga and Si–Al–Sn Systems

Germanium layers grown by zone thermal crystallization from a discrete liquid source

Crystal defects in solar cells produced by the method of thermomigration

Effect of growth conditions on formation of grain boundaries in epitaxial silicon layers

Sorption vacuumization of a growth cell during zone sublimation recrystallization

Diffusion in quasi-one-dimensional nano- and microobjects

Formation and use of positioning marks in scanning probe microscopy

Temperature gradient zone melting

Liquid-solid interface stability

Isothermal liquid phase epitaxy

Variable-gap Al x Ga 1– x As heterostructure for an electron-beam-pumped laser

Variable-gap AlxGa1–xAs heterostructure for an electron-beam-pumped laser

Theory of entrapped liquid motion under a temperature-gradient action

Mutual Diffusion Coefficient in an Associated Silicon--Platinum Solution

Calculational method for isoparametric compositions and the width of the forbidden band of five-component solid solutions based on AIII BV compounds

Consistency of crystal-lattice parameters and thermalexpansion coefficients in five-component heterostructures based on compounds AIIIBV

The Influence of the Variation of Temperature Along the Liquidus Line on the Mutual Diffusion Coefficient in the Silicon--Aluminium and Silicon--Copper Systems

Growth of silicon from a layer of moving solvent enriched with rare earth metals

Growing silicon epitaxial layers from a Si-Ga melt by the moving solvent method

Diffusion of Silicon and Germanium in Liquid Gold

Nature of the white phases and of the hardening of steel with seizing under vibrational conditions and with the presence of a lubricating medium

Growth kinetics of epitaxial layers of gallium phosphide by temperature-gradient zone recrystallization

ChemInform Abstract: KONZENTRATIONSABHAENGIGKEIT DER BEWEGUNGSGESCHWINDIGKEIT EINER ZONE DER ZUSAMMENSETZUNG SI‐AL‐AU BEIM ZONENSCHMELZEN MIT TEMPERATURGRADIENTEN

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