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Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate

IEEE electron device letters, 2007-08, Vol.28 (8), p.685-687

2007

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox

IEEE electron device letters, 2011-01, Vol.32 (1), p.24-26

2011

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1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

69th Device Research Conference, 2011, p.271-272

2011

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Ultrahigh-Speed 0.5 V Supply Voltage \hbox \hbox\hbox Quantum-Well Transistors on Silicon Substrate

IEEE electron device letters, 2007-08, Vol.28 (8), p.685-687

2007

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Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

IEEE electron device letters, 2006-05, Vol.27 (5), p.313-316

2006

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

IEEE electron device letters, 2005-08, Vol.26 (8), p.530-532

2005

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High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology

68th Device Research Conference, 2010, p.153-154

2010

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Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

2012 Symposium on VLSI Technology (VLSIT), 2012, p.53-54

2012

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Compressively strained InSb MOSFETs with high hole mobility for p-channel application

71st Device Research Conference, 2013, p.21-22

2013

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f tau / f max similar to hbox 430 / 800 Unknown character hbox GHz

IEEE electron device letters, 2011-01, Vol.32 (1), p.24-26

2011

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz

IEEE electron device letters, 2011, Vol.32 (1), p.24-26

2011

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InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous [Formula Omitted]

IEEE electron device letters, 2011-01, Vol.32 (1), p.24

2011

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Ultrahigh-Speed 0.5 V Supply Voltage In0.7 Ga0.3As Quantum-Well Transistors on Silicon Substrate

IEEE electron device letters, 2007-08, Vol.28 (8), p.685

2007

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200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.16-19

2009

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Ultrahigh-Speed 0.5 V Supply Voltage In@@d0.7@ Ga@@d0.3@As Quantum-Well Transistors on Silicon Substrate

IEEE electron device letters, 2007-08, Vol.28 (8), p.685-687

2007

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, fmax/spl ges/450 GHz

IEEE electron device letters, 2005-08, Vol.26 (8), p.530-532

2005

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Ultrahigh-Speed 0.5 V Supply Voltage In sub(0.7) Ga sub(0.3)As Quantum-Well Transistors on Silicon Substrate

IEEE electron device letters, 2007-01, Vol.28 (8)

2007

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InGaAs/InP DHBTs with 120-nm collector having simultaneously high f sub( tau ), f sub(max) greater than or equal to 450 GHz

IEEE electron device letters, 2005-01, Vol.26 (8)

2005

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InGaAs/InP DHBTs demonstrating simultaneous ƒτ/ƒmax ∼ 460/850 GHz in a refractory emitter process

IPRM 2011 - 23rd International Conference on Indium Phosphide and Related Materials, 2011, p.1-4

2011

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Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

2011 International Electron Devices Meeting, 2011, p.33.5.1-33.5.4

2011

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Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.403-406

2007

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InGaAs/InP DHBTs with a 75nm Collector, 20nm base Demonstrating 544 GHz ft, BVCEO = 3.2V, and BVCBO = 3.4V

2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, 2006, p.96-99

2006

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60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5V, and BVCBO = 2.7V

2006 IEEE Compound Semiconductor Integrated Circuit Symposium, 2006, p.275-278

2006

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In/sub 0.53/Ga/sub 0.47/As/InP Type-I DHBTs w/ 100 nm collector and 491 GHz f,415 GHz f/sub max

International Conference on Indium Phosphide and Related Materials, 2005, 2005, p.343-346

2005

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New apparatus for performing perturbed-angular-correlation spectroscopy on epitaxially grown III–V surfaces

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-10, Vol.143 (4), p.591-600

1998

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Ultrahigh-speed 0.5 V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f/f \sim \hbox\ \hbox

1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance

Ultrahigh-Speed 0.5 V Supply Voltage \hbox \hbox\hbox Quantum-Well Transistors on Silicon Substrate

Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, f/sub max//spl ges/450 GHz

High performance 110 nm InGaAs/InP DHBTs in dry-etched in-situ refractory emitter contact technology

Demonstration of improved heteroepitaxy, scaled gate stack and reduced interface states enabling heterojunction tunnel FETs with high drive current and high on-off ratio

Compressively strained InSb MOSFETs with high hole mobility for p-channel application

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous f tau / f max similar to hbox 430 / 800 Unknown character hbox GHz

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous fτ/fmax ~ 430/800 GHz

InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous [Formula Omitted]

Ultrahigh-Speed 0.5 V Supply Voltage In0.7 Ga0.3As Quantum-Well Transistors on Silicon Substrate

200-nm InGaAs/InP type I DHBT employing a dual-sidewall emitter process demonstrating ƒmax ≫ 800 GHz and ƒτ = 360 GHz

Ultrahigh-Speed 0.5 V Supply Voltage In@@d0.7@ Ga@@d0.3@As Quantum-Well Transistors on Silicon Substrate

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f/sub /spl tau//, fmax/spl ges/450 GHz

Ultrahigh-Speed 0.5 V Supply Voltage In sub(0.7) Ga sub(0.3)As Quantum-Well Transistors on Silicon Substrate

InGaAs/InP DHBTs with 120-nm collector having simultaneously high f sub( tau ), f sub(max) greater than or equal to 450 GHz

InGaAs/InP DHBTs demonstrating simultaneous ƒτ/ƒmax ∼ 460/850 GHz in a refractory emitter process

Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

Sub-300 nm InGaAs/InP Type-I DHBTs with a 150 nm collector, 30 nm base demonstrating 755 GHz fmax and 416 GHz fT

InGaAs/InP DHBTs with a 75nm Collector, 20nm base Demonstrating 544 GHz ft, BVCEO = 3.2V, and BVCBO = 3.4V

60nm collector InGaAs/InP Type-I DHBTs demonstrating 660 GHz fT, BVCEO = 2.5V, and BVCBO = 2.7V

In/sub 0.53/Ga/sub 0.47/As/InP Type-I DHBTs w/ 100 nm collector and 491 GHz f,415 GHz f/sub max

New apparatus for performing perturbed-angular-correlation spectroscopy on epitaxially grown III–V surfaces

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