UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

Volltextzugriff (PDF)

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Journal of crystal growth, 2013-10, Vol.380, p.157-162

2013

Volltextzugriff (PDF)

Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

Applied surface science, 2012-01, Vol.258 (7), p.2808-2815

2012

Volltextzugriff (PDF)

23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Optics express, 2013-11, Vol.21 (23), p.29000-29005

2013

Volltextzugriff (PDF)

Structural and electronic properties of BAs and BxGa1−xAs, BxIn1−xAs alloys

Physica. B, Condensed matter, 2005-07, Vol.364 (1-4), p.263-272

2005

Volltextzugriff (PDF)

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Applied physics letters, 2001-03, Vol.78 (12), p.1751-1753

2001

Volltextzugriff (PDF)

Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m

IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.764-773

2009

Volltextzugriff (PDF)

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

Journal of crystal growth, 2013-09, Vol.378, p.25-28

2013

Volltextzugriff (PDF)

Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Applied physics letters, 2007-12, Vol.91 (26)

2007

Volltextzugriff (PDF)

Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

Optics communications, 2006-07, Vol.263 (1), p.71-83

2006

Volltextzugriff (PDF)

Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation

Applied physics letters, 2006-04, Vol.88 (17)

2006

Volltextzugriff (PDF)

Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Journal of physics. D, Applied physics, 2008-08, Vol.41 (16), p.165505-165505 (8)

2008

Volltextzugriff (PDF)

Wavelength tuning of InAs quantum dots grown on (311)B InP

Applied physics letters, 1999-05, Vol.74 (22), p.3356-3358

1999

Volltextzugriff (PDF)

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Journal of crystal growth, 2005-01, Vol.273 (3), p.357-362

2005

Volltextzugriff (PDF)

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Physical review. B, Condensed matter and materials physics, 2006-12, Vol.74 (24), Article 245315

2006

Volltextzugriff (PDF)

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Journal of crystal growth, 2003-04, Vol.251 (1), p.230-235

2003

Volltextzugriff (PDF)

Exciton and biexciton binding and vertical Stark effect in a model lens-shaped quantum box: Application to InAs/InP quantum dots

Physics letters. A, 2005-09, Vol.344 (6), p.457-462

2005

Volltextzugriff (PDF)

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

Electronics letters, 2009, Vol.45 (1), p.50-51

2009

Volltextzugriff (PDF)

290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range

Applied physics letters, 2004-12, Vol.85 (24), p.5926-5928

2004

Volltextzugriff (PDF)

Impact of the capping layers on lateral confinement in InAs ∕ InP quantum dots for 1.55 μ m laser applications studied by magnetophotoluminescence

Applied physics letters, 2005-12, Vol.87 (23), p.233111-233111-3

2005

Volltextzugriff (PDF)

Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Applied physics letters, 2004-12, Vol.85 (23), p.5685-5687

2004

Volltextzugriff (PDF)

Comment on 'Excited states in the infinite quantum lens potential: conformal mapping and moment quantization methods'

Journal of physics. Condensed matter, 2004-04, Vol.16 (16), p.2941-2943

2004

Volltextzugriff (PDF)

Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Semiconductor science and technology, 2005-05, Vol.20 (5), p.459-463

2005

Volltextzugriff (PDF)

Spectral Analysis of 1.55- \mum InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

IEEE journal of quantum electronics, 2009-07, Vol.45 (7), p.872-878

2009

Volltextzugriff (PDF)

In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP

Journal of physics. Condensed matter, 2003-12, Vol.15 (50), p.8737-8752

2003

Volltextzugriff (PDF)

1 – 25 von 247

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(181)
Mit Volltextzugriff
(204)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Physics
(120)
Science & Technology
(107)
Physical Sciences
(100)
Optics
(87)
Engineering Sciences
(67)
Photonic
(67)
Physics, Applied
(67)
Exact Sciences And Technology
(51)
Technology
(50)
Materials Science
(41)
Quantum Dots
(31)
Materials Science, Multidisciplinary
(28)
Physics, Condensed Matter
(28)
Engineering
(27)
Engineering, Electrical & Electronic
(27)
Lasers
(25)
Indium Phosphide
(24)
Condensed Matter: Electronic Structure, Electrical, Magnetic, And Optical Properties
(20)
Photoluminescence
(18)
Quantum Dot Lasers
(18)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

High-gain and low-threshold InAs quantum-dot lasers on InP

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Thermodynamic evolution of antiphase boundaries in GaP/Si epilayers evidenced by advanced X-ray scattering

23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Structural and electronic properties of BAs and BxGa1−xAs, BxIn1−xAs alloys

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Optical Feedback Tolerance of Quantum-Dot- and Quantum-Dash-Based Semiconductor Lasers Operating at 1.55 $\mu$m

Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substrates

Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation

Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Wavelength tuning of InAs quantum dots grown on (311)B InP

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Exciton and biexciton binding and vertical Stark effect in a model lens-shaped quantum box: Application to InAs/InP quantum dots

Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy

290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range

Impact of the capping layers on lateral confinement in InAs ∕ InP quantum dots for 1.55 μ m laser applications studied by magnetophotoluminescence

Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Comment on 'Excited states in the infinite quantum lens potential: conformal mapping and moment quantization methods'

Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Spectral Analysis of 1.55- \mum InAs-InP(113)B Quantum-Dot Lasers Based on a Multipopulation Rate Equations Model

In-plane anisotropy of quantum elliptic heterostructures studied with symmetry-adapted Mathieu functions: an application to self-organized InAs quantum dots on InP

Suchergebnisse filtern