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Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser

IEEE photonics technology letters, 2006-02, Vol.18 (4), p.625-627

2006

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Editorial

Journal of international money and finance, 2002-11, Vol.21 (6), p.693

Lothian, J.R

2002

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In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

IEEE transactions on microwave theory and techniques, 1999-08, Vol.47 (8), p.1404-1412

1999

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Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs

IEEE electron device letters, 1998-08, Vol.19 (8), p.309-311

1998

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Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

Solid-state electronics, 1997-11, Vol.41 (11), p.1751-1753

1997

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Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

IEEE electron device letters, 1997-11, Vol.18 (11), p.550-552

1997

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Plasma damage effects in InAlN field effect transistors

Solid-state electronics, 1996-12, Vol.39 (12), p.1747-1752

1996

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Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

IEEE electron device letters, 1993-07, Vol.14 (7), p.332-334

1993

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The role of hydrogen in current-induced degradation of carbon-doped [formula omitted] heterojunction bipolar transistors

Solid-state electronics, 1995-06, Vol.38 (6), p.1137-1141

1995

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Thermal simulations of high power, bulk GaN rectifiers

Solid-state electronics, 2003-06, Vol.47 (6), p.1037-1043

2003

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Implanted p– n junctions in GaN

Solid-state electronics, 1999, Vol.43 (7), p.1235-1238

1999

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Schottky barrier heights of In 0.5(Al xGa 1− x) 0.5P (0≤ x≤1) lattice matched to GaAs

Solid-state electronics, 1998, Vol.42 (6), p.1045-1048

1998

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Pt/Ti/Pt/Au Schottky contacts on HEMTs

Solid-state electronics, 1997-05, Vol.41 (5), p.673-675

1997

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XFROG characterization of a 10 GHz colliding-pulse mode-locked laser

2006 Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, 2006, p.1-2

2006

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Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs

Solid-state electronics, 1998-06, Vol.42 (6), p.1045-1048

1998

Volltextzugriff (PDF)

Microwave CI2/H2 discharges for high rate etching of InP

Electronics letters, 1992-08, Vol.28 (18), p.1749-1750

1992

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Recessed gate GaN field effect transistor

Solid-state electronics, 1997-11, Vol.41 (11), p.1819-1820

1997

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Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

Solid-state electronics, 1998-05, Vol.42 (5), p.749-753

1998

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Passivation of carbon doping in InGaAs during ECR-CVD of SiN x

Solid-state electronics, 1996, Vol.39 (5), p.763-765

1996

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In0.5(Al0.3Ga0.7)0.5P/In0.2Ga0.8As power HEMT with 65.2% power-added efficiency under 1.2 V operation

Electronics letters, 1998, Vol.34 (6), p.594

1998

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ECR plasma etching of chemically vapour deposited diamond thin films

Electronics letters, 1992-04, Vol.28 (9), p.822-824

1992

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Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs

IEEE electron device letters, 1998-08, Vol.19 (8), p.309-311

1998

Volltextzugriff (PDF)

Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

Solid-state electronics, 1998-05, Vol.42 (5), p.749-753

1998

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High performance pseudomorphic [formula omitted] power HEMTs

Solid-state electronics, 1997-12, Vol.41 (12), p.1913-1915

1997

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Dry etching of via connections for InP power devices

Electronics letters, 1993-05, Vol.29 (11), p.984-986

1993

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Synchronized transform-limited operation of 10-GHz colliding pulse mode-locked laser

Editorial

In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/ HEMTs for high-efficiency low-voltage power amplifiers: design, fabrication, and device results

Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs

Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

Single- and double-heterojunction pseudomorphic In/sub 0.5/(Al/sub 0.3/Ga/sub 0.7/)/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As high electron mobility transistors grown by gas source molecular beam epitaxy

Plasma damage effects in InAlN field effect transistors

Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

The role of hydrogen in current-induced degradation of carbon-doped [formula omitted] heterojunction bipolar transistors

Thermal simulations of high power, bulk GaN rectifiers

Implanted p– n junctions in GaN

Schottky barrier heights of In 0.5(Al xGa 1− x) 0.5P (0≤ x≤1) lattice matched to GaAs

Pt/Ti/Pt/Au Schottky contacts on HEMTs

XFROG characterization of a 10 GHz colliding-pulse mode-locked laser

Schottky barrier heights of In0.5(AlxGa1−x)0.5P (0≤x≤1) lattice matched to GaAs

Microwave CI2/H2 discharges for high rate etching of InP

Recessed gate GaN field effect transistor

Effect of high density H 2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

Passivation of carbon doping in InGaAs during ECR-CVD of SiN x

In0.5(Al0.3Ga0.7)0.5P/In0.2Ga0.8As power HEMT with 65.2% power-added efficiency under 1.2 V operation

ECR plasma etching of chemically vapour deposited diamond thin films

Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs

Effect of high density H2 plasmas on InGaP/GaAs and AlGaAs/GaAs HEMTs

High performance pseudomorphic [formula omitted] power HEMTs

Dry etching of via connections for InP power devices

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