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High-Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

IEEE transactions on power electronics, 2012-11, Vol.27 (11), p.4417-4424

2012

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An overview to integrated power module design for high power electronics packaging

Microelectronics and reliability, 2000-03, Vol.40 (3), p.365-379

2000

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Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design

Materials science forum, 2010-01, Vol.645-648, p.949-952

2010

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Low cost flex substrates for miniaturized electronic assemblies

Microelectronics and reliability, 2002-07, Vol.42 (7), p.1091-1099

2002

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A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

IEEE transactions on power electronics, 2014-05, Vol.29 (5), p.2606-2617

2014

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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

IEEE transactions on power electronics, 2014-02, Vol.29 (2), p.539-542

2014

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A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

IEEE transactions on power electronics, 2014-02, Vol.29 (2)

2014

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High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications

Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005, 2005, Vol.1, p.393-398 Vol. 1

2005

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High Temperature Silicon Carbide Power Modules for High Performance Systems

Materials science forum, 2012-01, Vol.717-720, p.1219-1224

2012

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Silicon carbide based Anode Supply Module Array for hall effect thrusters

2013 IEEE Aerospace Conference, 2013, p.1-8

2013

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A novel nonlinear switch cell topology

2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), 2013, p.55-59

2013

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Silicon carbide power processing unit for Hall effect thrusters

2012 IEEE Aerospace Conference, 2012, p.1-6

2012

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Ultra-Wide Temperature (-230°C to 130°C) DC-Motor Drive with SiGe Asynchronous Controller

2008 IEEE Aerospace Conference, 2008, p.1-15

2008

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A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

IEEE transactions on power electronics, 2014-05, Vol.29 (5)

2014

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SiC intelligent multi module DC/DC converter system for space applications

2009 IEEE Aerospace conference, 2009, p.1-19

2009

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Ultra-lightweight, high efficiency SiC based power electronic converters for extreme environments

2006 IEEE Aerospace Conference, 2006, p.19 pp.

2006

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High voltage, high power density bi-directional multi-level converters utilizing silicon and silicon carbide (SiC) switches

2008 Twenty-Third Annual IEEE Applied Power Electronics Conference and Exposition, 2008, p.252-258

2008

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Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720), 2004, Vol.4, p.2538-2555 Vol.4

2004

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Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter

IECON 2006 - 32nd Annual Conference on IEEE Industrial Electronics, 2006, p.1822-1827

2006

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Model-based design tools for extending COTS components to extreme environments

2006 IEEE Aerospace Conference, 2006, p.11 pp.

2006

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High-temperature silicon carbide and silicon on insulator based integrated power modules

2009 IEEE Vehicle Power and Propulsion Conference, 2009, p.1032-1035

2009

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Materials issues for solutions of Power Electronic Building Blocks (PEBB)

Proceedings 3rd International Symposium on Advanced Packaging Materials Processes, Properties and Interfaces, 1997, p.177-178

1997

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A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

IMAPS other content, 2013-01, Vol.2013 (HITEN), p.56-60

2013

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High Temperature (230 °C) Isolated Power Supply

IMAPS other content, 2010-01, Vol.2010 (HITEC), p.283-288

2010

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Thermal Stress Reliability Study on Substrates for High Temperature, Silicon Carbide Power Electronic Modules

IMAPS other content, 2012-01, Vol.2012 (HITEC), p.345-353

2012

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High-Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

An overview to integrated power module design for high power electronics packaging

Characterization of SiC JFETs and its Application in Extreme Temperature (over 450°C) Circuit Design

Low cost flex substrates for miniaturized electronic assemblies

A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

A 4H Silicon Carbide Gate Buffer for Integrated Power Systems

High-temperature silicon carbide (SiC) power switches in multichip power module (MCPM) applications

High Temperature Silicon Carbide Power Modules for High Performance Systems

Silicon carbide based Anode Supply Module Array for hall effect thrusters

A novel nonlinear switch cell topology

Silicon carbide power processing unit for Hall effect thrusters

Ultra-Wide Temperature (-230°C to 130°C) DC-Motor Drive with SiGe Asynchronous Controller

A High-Density, High-Efficiency, Isolated On-Board Vehicle Battery Charger Utilizing Silicon Carbide Power Devices

SiC intelligent multi module DC/DC converter system for space applications

Ultra-lightweight, high efficiency SiC based power electronic converters for extreme environments

High voltage, high power density bi-directional multi-level converters utilizing silicon and silicon carbide (SiC) switches

Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments

Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter

Model-based design tools for extending COTS components to extreme environments

High-temperature silicon carbide and silicon on insulator based integrated power modules

Materials issues for solutions of Power Electronic Building Blocks (PEBB)

A High Temperature, Fast Switching SiC Multi-chip Power Module (MCPM) for High Frequency (> 500 kHz) Power Conversion Applications

High Temperature (230 °C) Isolated Power Supply

Thermal Stress Reliability Study on Substrates for High Temperature, Silicon Carbide Power Electronic Modules

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