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High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Applied physics letters, 2011-05, Vol.98 (21), p.211114-211114-3

2011

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Reliability issues of GaN based high voltage power devices

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1710-1716

2011

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AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

IEEE electron device letters, 2009-09, Vol.30 (9), p.901-903

2009

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Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Microelectronics and reliability, 2011-02, Vol.51 (2), p.217-223

2011

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GaN HEMT Potential for Low-Noise Highly Linear RF Applications

IEEE microwave and wireless components letters, 2008-09, Vol.18 (9), p.605-607

2008

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Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

IEEE electron device letters, 2009-02, Vol.30 (2), p.103-106

2009

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Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Semiconductor science and technology, 2010-07, Vol.25 (7), p.075005-075005

2010

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Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3661-3666

2006

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2 MeV ion irradiation effects on AlGaN/GaN HFET devices

Solid-state electronics, 2008-07, Vol.52 (7), p.1011-1017

2008

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Laser-assisted processing of VIAs for AlGaN/GaN HEMTs on SiC substrates

IEEE electron device letters, 2006-06, Vol.27 (6), p.425-427

2006

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High energy irradiation effects on AlGaN/GaN HFET devices

Semiconductor science and technology, 2007-11, Vol.22 (11), p.1220-1224, Article 1220

2007

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High temperature characterization of Pt-based Schottky diodes on AlGaN/GaN heterostructures

Physica status solidi. C, 2006-06, Vol.3 (6), p.1709-1712

2006

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Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

Solid-state electronics, 2007-06, Vol.51 (6), p.969-974

2007

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2MeV ion irradiation effects on AlGaN/GaN HFET devices

Solid-state electronics, 2008-07, Vol.52 (7), p.1011-1017

2008

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Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

Physica status solidi. A, Applied research, 2002-12, Vol.194 (2), p.460-463

2002

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High and low energy proton irradiation effects on AlGaN/GaN HFETs

Physica status solidi. C, 2006-06, Vol.3 (6), p.2338-2341

2006

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Reliability Investigation of Gallium Nitride HEMT

Microelectronics and reliability, 2004-09, Vol.44 (9), p.1369-1373

2004

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Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.263-266

2001

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Doping of 3C-SiC by implantation of nitrogen at high temperatures

Journal of electronic materials, 1997-03, Vol.26 (3), p.123-127

1997

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Characterization of 3C-SiC doped by nitrogen implantation

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-04, Vol.46 (1), p.156-159

1997

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Mechanism of power density degradation due to trapping effects in AlGaN/GaN HEMTs

IEEE MTT-S International Microwave Symposium Digest, 2003, 2003, Vol.1, p.455-458 vol.1

2003

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Influence of GaN cap on robustness of AlGaN/GaN HEMTs

2009 IEEE International Reliability Physics Symposium, 2009, p.71-75

2009

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Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behavior of nitrogen implanted β-SiC films

Diamond and related materials, 1997-08, Vol.6 (10), p.1445-1447

1997

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Properties of amorphous diamond films prepared by a filtered cathodic arc

Journal of applied physics, 1995-05, Vol.77 (9), p.4750-4756

1995

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Self-aligned broad-beam ion optics

IEEE transactions on electron devices, 1992-02, Vol.39 (2), p.444-447

1992

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High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching

Reliability issues of GaN based high voltage power devices

AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

GaN HEMT Potential for Low-Noise Highly Linear RF Applications

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs

Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices

2 MeV ion irradiation effects on AlGaN/GaN HFET devices

Laser-assisted processing of VIAs for AlGaN/GaN HEMTs on SiC substrates

High energy irradiation effects on AlGaN/GaN HFET devices

High temperature characterization of Pt-based Schottky diodes on AlGaN/GaN heterostructures

Transient self-heating effects in multifinger AlGaN/GaN HEMTs with metal airbridges

2MeV ion irradiation effects on AlGaN/GaN HFET devices

Large Area AlGaN/GaN HEMTs Grown on Insulating Silicon Carbide Substrates

High and low energy proton irradiation effects on AlGaN/GaN HFETs

Reliability Investigation of Gallium Nitride HEMT

Uniformity and Scalability of AlGaN/GaN HEMTs Using Stepper Lithography

Doping of 3C-SiC by implantation of nitrogen at high temperatures

Characterization of 3C-SiC doped by nitrogen implantation

Mechanism of power density degradation due to trapping effects in AlGaN/GaN HEMTs

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Investigation of the effects of high temperature implantation and post implantation annealing on the electrical behavior of nitrogen implanted β-SiC films

Properties of amorphous diamond films prepared by a filtered cathodic arc

Self-aligned broad-beam ion optics

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