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Nature-based solutions to improve water security in northern Mexico

Oryx, 2023-05, Vol.57 (3), p.286-287

2023

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Comparison of mepivacaine and lidocaine for intravenous regional anaesthesia: pharmacokinetic study and clinical correlation

British journal of anaesthesia : BJA, 2002-04, Vol.88 (4), p.516-519

2002

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Gigahertz InGaAs-based vertical Schottky diode optical detectors by substrate removal

IEEE journal of quantum electronics, 1998-06, Vol.34 (6), p.991-999

1998

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1.3 μm electro-optic silicon switch

Applied physics letters, 1987, Vol.51 (1), p.6-8

1987

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Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

Electronics letters, 2014, Vol.50 (1), p.10-11

2014

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High-performance substrate-removed InGaAs Schottky photodetectors

IEEE photonics technology letters, 1998-08, Vol.10 (8), p.1144-1146

1998

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Indium phosphide passivation using thin layers of cadmium sulfide

Applied physics letters, 1995-07, Vol.67 (4), p.527-529

1995

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The influence of dislocation density on electron mobility in InP films on Si

Applied physics letters, 1991-08, Vol.59 (9), p.1090-1092

1991

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Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics

Journal of electronic materials, 1996-05, Vol.25 (4), p.709-713

1996

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Low-temperature chemical vapor deposition of SiO2 at 2-10 Torr

Applied physics letters, 1987-01, Vol.50 (4), p.197-199

1987

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Cadmium sulfide surface stabilization for InP-based optoelectronic devices

Journal of electronic materials, 1996-05, Vol.25 (4), p.603-609

1996

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All-silicon active and passive guided-wave components for lambda = 1.3 and 1.6 mu m

IEEE journal of quantum electronics, 1986-06, Vol.QE-22 (6), p.873-879

1986

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Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

Electronics letters, 2009-06, Vol.21 (21), p.953

2009

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A patterned and passivated organic-inorganic semiconductor heterojunction diode

IEEE photonics technology letters, 1990-10, Vol.2 (10), p.724-726

1990

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Insulator-metal transition versus temperature for the CDW of the 1D adiabatic Holstein model

Physica. D, 1998-03, Vol.113 (2), p.276-282

1998

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High-purity InP grown on Si by organometallic vapor phase epitaxy

Applied physics letters, 1991-04, Vol.58 (14), p.1554-1556

1991

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Simulation studies of silicon electro-optic waveguide devices

Journal of applied physics, 1990, Vol.68 (10), p.4964-4970

1990

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Electrical properties of low-temperature pyrolytic SiO2 on InP

Electronics letters, 1988-02, Vol.24 (3), p.172-173

1988

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Pulse annealing deficiencies in GaAs

Applied physics letters, 1980-10, Vol.37 (7), p.612-615

1980

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Improved electrical mobilities from implanting InP at elevated temperatures

Applied physics letters, 1979-07, Vol.35 (2), p.192-194

1979

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Concurrent gout and Mycobacterium tuberculosis arthritis

Journal of rheumatology, 1997-01, Vol.24 (1), p.184

1997

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Incoherent annealing of implanted layers in GaAs

IEEE electron device letters, 1982-04, Vol.3 (4), p.102-103

1982

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Compensation from implantation damage in InP

Applied physics letters, 1977-08, Vol.31 (4), p.256-258

1977

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InP surface conducting films from electron-pulse annealing

Applied physics letters, 1980-06, Vol.36 (11), p.922-924

1980

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High-performance InGaAs-InP APDs on GaAs

IEEE photonics technology letters, 2005-04, Vol.17 (4), p.873-874

2005

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Nature-based solutions to improve water security in northern Mexico

Comparison of mepivacaine and lidocaine for intravenous regional anaesthesia: pharmacokinetic study and clinical correlation

Gigahertz InGaAs-based vertical Schottky diode optical detectors by substrate removal

1.3 μm electro-optic silicon switch

Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

High-performance substrate-removed InGaAs Schottky photodetectors

Indium phosphide passivation using thin layers of cadmium sulfide

The influence of dislocation density on electron mobility in InP films on Si

Optoelectronic properties of transition metal and rare earth doped epitaxial layers on InP for magneto-optics

Low-temperature chemical vapor deposition of SiO2 at 2-10 Torr

Cadmium sulfide surface stabilization for InP-based optoelectronic devices

All-silicon active and passive guided-wave components for lambda = 1.3 and 1.6 mu m

Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

A patterned and passivated organic-inorganic semiconductor heterojunction diode

Insulator-metal transition versus temperature for the CDW of the 1D adiabatic Holstein model

High-purity InP grown on Si by organometallic vapor phase epitaxy

Simulation studies of silicon electro-optic waveguide devices

Electrical properties of low-temperature pyrolytic SiO2 on InP

Pulse annealing deficiencies in GaAs

Improved electrical mobilities from implanting InP at elevated temperatures

Concurrent gout and Mycobacterium tuberculosis arthritis

Incoherent annealing of implanted layers in GaAs

Compensation from implantation damage in InP

InP surface conducting films from electron-pulse annealing

High-performance InGaAs-InP APDs on GaAs

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