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On the Time-Dependent Transport Mechanism Between Surface Traps and the 2DEG in AlGaN/GaN Devices

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4415-4423

2017

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Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.27-29

2014

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Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure

Applied physics letters, 2017-04, Vol.110 (16)

2017

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On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

Microelectronics and reliability, 2018-09, Vol.88-90, p.610-614

2018

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ICeGaNTM technology: The easy-to-use and self-protected GaN power IC

Power electronic devices and components, 2023-03, Vol.4, p.100028, Article 100028

2023

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Diamond power devices: state of the art, modelling, figures of merit and future perspective

Journal of physics. D, Applied physics, 2020-02, Vol.53 (9), p.93001

2020

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Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

IEEE electron device letters, 2019-08, Vol.40 (8), p.1253-1256

2019

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Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.71-74

2016

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Bonding Pad Over Active Area Layout for Lateral AlGaN/GaN Power HEMTs: A Critical View

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2301-2306

2019

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A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit

ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC), 2022, p.396-399

2022

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Suppression technique of vertical leakage current in GaN-on-Si power transistors

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD12

2019

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Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface

2024 IEEE Applied Power Electronics Conference and Exposition (APEC), 2024, p.761-766

2024

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On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Energies (Basel), 2017, Vol.10 (3), p.407

2017

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Substantiation of buried two dimensional hole gas (2DHG) existence inGaN-on-Si epitaxial heterostructure

Applied physics letters, 2017-04, Vol.110 (16)

2017

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SOI multidirectional thermoelectric flow sensor for harsh environment applications

2015 International Semiconductor Conference (CAS), 2015, p.95-98

2015

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On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

CAS 2013 (International Semiconductor Conference), 2013, Vol.2, p.155-158

2013

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Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors

IET power electronics, 2015-12, Vol.8 (12), p.2322-2328

2015

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Effect of device layout on the switching of enhancement mode GaN HEMTs

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2018, p.220-223

2018

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Gan high-voltage transistors : an investigation of surface donor traps

Longobardi, Giorgia

2015

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GaN-on-Si Thermoresistive Flow Sensor with Gold Hot-wire

2019 IEEE SENSORS, 2019, p.1-4

2019

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Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters

2015 International Semiconductor Conference (CAS), 2015, p.211-214

2015

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The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.329-332

2014

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GaN power devices for Electric Vehicles State-of-the-art and future perspective

2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), 2018, p.1-6

2018

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Modelling 2DEG charges in AlGaN/GaN heterostructures

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.363-366

2012

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GaN-on-Si Calorimetric Thermal Conductivity Gas Sensor

Meeting abstracts (Electrochemical Society), 2020-05, Vol.MA2020-01 (30), p.2261-2261

2020

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On the Time-Dependent Transport Mechanism Between Surface Traps and the 2DEG in AlGaN/GaN Devices

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

ICeGaNTM technology: The easy-to-use and self-protected GaN power IC

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

Zero reverse recovery in SiC and GaN Schottky diodes: A comparison

Bonding Pad Over Active Area Layout for Lateral AlGaN/GaN Power HEMTs: A Critical View

A novel depletion mode p-GaN island HEMT and its use in a monolithically integrated start-up circuit

Suppression technique of vertical leakage current in GaN-on-Si power transistors

Exceptional Gate Overvoltage Robustness in P-Gate GaN HEMT with Integrated Circuit Interface

On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs

Substantiation of buried two dimensional hole gas (2DHG) existence inGaN-on-Si epitaxial heterostructure

SOI multidirectional thermoelectric flow sensor for harsh environment applications

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

Effect of device layout on the switching of enhancement mode GaN HEMTs

Gan high-voltage transistors : an investigation of surface donor traps

GaN-on-Si Thermoresistive Flow Sensor with Gold Hot-wire

Modelling of an AlGaN/GaN Schottky diode and extraction of main parameters

The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

GaN power devices for Electric Vehicles State-of-the-art and future perspective

Modelling 2DEG charges in AlGaN/GaN heterostructures

GaN-on-Si Calorimetric Thermal Conductivity Gas Sensor

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