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Isovalent dopant-vacancy clusters in silicon: Density functional theory calculations

Physica. B, Condensed matter, 2024-02, Vol.674, p.415540, Article 415540

2024

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Impact of isovalent doping on the formation of the CiOi(SiI)n defects in silicon

Solid state communications, 2017-09, Vol.263, p.19-22

2017

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Impact of isovalent doping on the formation of the C i O i (Si I ) n defects in silicon

Solid state communications, 2017-09, Vol.263, p.19-22

2017

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Substitutional carbon-dioxygen center in irradiated silicon

Materials science in semiconductor processing, 2021-06, Vol.127, p.105661, Article 105661

2021

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A-centers and isovalent impurities in germanium: Density functional theory calculations

Materials science & engineering. B, Solid-state materials for advanced technology, 2011-03, Vol.176 (5), p.453-457

2011

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The COV defect in neutron irradiated silicon: An infrared spectroscopy study

Materials science in semiconductor processing, 2018-03, Vol.75, p.283-287

2018

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Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4693-4697

2009

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The effect of germanium doping on the evolution of defects in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.133-136

2008

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The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si

Materials science & engineering. B, Solid-state materials for advanced technology, 2009-03, Vol.159, p.122-127

2009

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Isochronal annealing studies of carbon-related defects in irradiated Si

Physica. B, Condensed matter, 2006-04, Vol.376, p.165-168

2006

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Carbon-related complexes in neutron-irradiated silicon

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.551-555

2003

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Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-12, Vol.253 (1-2), p.205-209

2006

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Thermally induced defects in silicon irradiated with fast neutrons

Radiation physics and chemistry (Oxford, England : 1993), 2009-10, Vol.78 (10), p.S67-S70

2009

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Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

25th International Conference on Defects in Semiconductors,St Petersburg, Russian Federation,2009-07-20 - 2009-07-24, 2009-12, Vol.404 (23-24), p.4568-4571

2009

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IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped Si

Physica. B, Condensed matter, 2007-12, Vol.401, p.487-490

2007

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Dedicated in the Memory of Professor Ulrich Gösele. Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties

Physics procedia, 2012, Vol.32, p.575-579

2012

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Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure

Radiation physics and chemistry (Oxford, England : 1993), 2009-10, Vol.78 (10), p.S64-S66

2009

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Novel aspects of oxygen diffusion in silicon

Journal of materials science. Materials in electronics, 1996-10, Vol.7 (5)

1996

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Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

Acta physica Polonica, A, 2010-02, Vol.117 (2), p.344-347

2010

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An in-depth investigation into the temperature dependence of the mass spectra of an Au82Si18 liquid metal field emitter

Applied physics. A, Materials science & processing, 2005-07, Vol.81 (2), p.385-388

2005

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Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

Radiation measurements, 2007-04, Vol.42 (4), p.688-692

2007

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Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

International journal of hydrogen energy, 2001-05, Vol.26 (5), p.483-488

2001

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A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms

Ultramicroscopy, 2004-07, Vol.100 (1-2), p.1-7

2004

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Pressure stimulated creation of oxygen-related defects in oxygen-implanted and neutron-irradiated silicon

Vacuum, 2005-05, Vol.78 (2), p.199-203

2005

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Defects in Ge-doped Cz-Si annealed under high stress

Materials science in semiconductor processing, 2006-02, Vol.9 (1), p.82-87

2006

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Isovalent dopant-vacancy clusters in silicon: Density functional theory calculations

Impact of isovalent doping on the formation of the CiOi(SiI)n defects in silicon

Impact of isovalent doping on the formation of the C i O i (Si I ) n defects in silicon

Substitutional carbon-dioxygen center in irradiated silicon

A-centers and isovalent impurities in germanium: Density functional theory calculations

The COV defect in neutron irradiated silicon: An infrared spectroscopy study

Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si

The effect of germanium doping on the evolution of defects in silicon

The influence of thermal treatments under hydrostatic pressure prior to irradiation on the annealing characteristics of the VO defect in Si

Isochronal annealing studies of carbon-related defects in irradiated Si

Carbon-related complexes in neutron-irradiated silicon

Stress-dependent transformation of interstitial oxygen in processed Ge-doped Cz-Si

Thermally induced defects in silicon irradiated with fast neutrons

Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

IR studies of oxygen–vacancy defects in electron-irradiated Ge-doped Si

Dedicated in the Memory of Professor Ulrich Gösele. Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Interface Properties

Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure

Novel aspects of oxygen diffusion in silicon

Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure

An in-depth investigation into the temperature dependence of the mass spectra of an Au82Si18 liquid metal field emitter

Revealing the radiation-induced effects in silicon by processing at enhanced temperatures–pressures

Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

A Au82Si18 liquid metal field-ion emitter for the production of Si ions: fundamental properties and mechanisms

Pressure stimulated creation of oxygen-related defects in oxygen-implanted and neutron-irradiated silicon

Defects in Ge-doped Cz-Si annealed under high stress

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