UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

The origin of infrared bands in nitrogen-doped Si

Journal of materials science, 2022-03, Vol.57 (9), p.5507-5517

2022

Volltextzugriff (PDF)

Nitrogen-Related Defects in Crystalline Silicon

Applied sciences, 2024-02, Vol.14 (4), p.1631

2024

Volltextzugriff (PDF)

Carbon related defects in irradiated silicon revisited

Scientific reports, 2014-05, Vol.4 (1), p.4909-4909, Article 4909

2014

Volltextzugriff (PDF)

Infrared studies of the evolution of the CiOi(SiI) defect in irradiated Si upon isothermal anneals

Journal of applied physics, 2016-03, Vol.119 (12)

2016

Volltextzugriff (PDF)

Doping strategies to control A-centres in silicon: insights from hybrid density functional theory

Physical chemistry chemical physics : PCCP, 2014-05, Vol.16 (18), p.8487-8492

2014

Volltextzugriff (PDF)

Theoretical investigation of nitrogen-vacancy defects in silicon

AIP advances, 2022-02, Vol.12 (2), p.025112-025112-10

2022

Volltextzugriff (PDF)

Perilipin Ablation Results in a Lean Mouse with Aberrant Adipocyte Lipolysis, Enhanced Leptin Production, and Resistance to Diet-Induced Obesity

Proceedings of the National Academy of Sciences - PNAS, 2001-05, Vol.98 (11), p.6494-6499

2001

Volltextzugriff (PDF)

Density functional theory study of the VmN2On (m,n = 1,2) complexes in silicon

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2023-05, Vol.37 (14)

2023

Volltextzugriff (PDF)

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Journal of applied physics, 2011-11, Vol.110 (9), p.093507-093507-8

2011

Volltextzugriff (PDF)

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Journal of materials science. Materials in electronics, 2014-06, Vol.25 (6), p.2395-2410

2014

Volltextzugriff (PDF)

Point defect engineering strategies to suppress A-center formation in silicon

Applied physics letters, 2011-12, Vol.99 (24), p.241901-241901-3

2011

Volltextzugriff (PDF)

Infrared study of defects in nitrogen-doped electron irradiated silicon

Journal of materials science. Materials in electronics, 2016-02, Vol.27 (2), p.2054-2061

2016

Volltextzugriff (PDF)

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

Journal of applied physics, 2012-12, Vol.112 (12)

2012

Volltextzugriff (PDF)

Vacancy-oxygen defects in p -type Si1−xGex

Journal of applied physics, 2014-10, Vol.116 (13)

2014

Volltextzugriff (PDF)

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

Journal of applied physics, 2014-05, Vol.115 (18)

2014

Volltextzugriff (PDF)

Role of PAT proteins in lipid metabolism

Biochimie, 2005, Vol.87 (1), p.45-49

2005

Volltextzugriff (PDF)

Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon

Journal of materials science. Materials in electronics, 2019-08, Vol.30 (16), p.15345-15355

2019

Volltextzugriff (PDF)

Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon

Journal of materials science. Materials in electronics, 2013-11, Vol.24 (11), p.4328-4331

2013

Volltextzugriff (PDF)

Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

Journal of materials science. Materials in electronics, 2013-05, Vol.24 (5), p.1696-1701

2013

Volltextzugriff (PDF)

Interaction of n -type dopants with oxygen in silicon and germanium

Journal of applied physics, 2012-10, Vol.112 (7)

2012

Volltextzugriff (PDF)

The Ci(SiI)n defect in neutron-irradiated silicon

Journal of materials science. Materials in electronics, 2020, Vol.31 (2), p.930-934

2020

Volltextzugriff (PDF)

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Journal of materials science. Materials in electronics, 2017-07, Vol.28 (14), p.10298-10312

2017

Volltextzugriff (PDF)

Semi-empirical modelling of the di-interstitial defect in silicon

Journal of materials science. Materials in electronics, 2014-12, Vol.25 (12), p.5441-5445

2014

Volltextzugriff (PDF)

An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

Journal of applied physics, 2015-09, Vol.118 (12)

2015

Volltextzugriff (PDF)

The CiOi(SiI)2 defect in silicon: density functional theory calculations

Journal of materials science. Materials in electronics, 2017-07, Vol.28 (14), p.10295-10297

2017

Volltextzugriff (PDF)

1 – 25 von 401

Menü

Weitere Dienste

Einstellungen

The origin of infrared bands in nitrogen-doped Si

Nitrogen-Related Defects in Crystalline Silicon

Carbon related defects in irradiated silicon revisited

Infrared studies of the evolution of the CiOi(SiI) defect in irradiated Si upon isothermal anneals

Doping strategies to control A-centres in silicon: insights from hybrid density functional theory

Theoretical investigation of nitrogen-vacancy defects in silicon

Perilipin Ablation Results in a Lean Mouse with Aberrant Adipocyte Lipolysis, Enhanced Leptin Production, and Resistance to Diet-Induced Obesity

Density functional theory study of the VmN2On (m,n = 1,2) complexes in silicon

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Point defect engineering strategies to suppress A-center formation in silicon

Infrared study of defects in nitrogen-doped electron irradiated silicon

Defect engineering of the oxygen-vacancy clusters formation in electron irradiated silicon by isovalent doping: An infrared perspective

Vacancy-oxygen defects in p -type Si1−xGex

G-centers in irradiated silicon revisited: A screened hybrid density functional theory approach

Role of PAT proteins in lipid metabolism

Infrared spectroscopy studies of localized vibrations in neutron irradiated silicon

Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon

Impact of isovalent defect engineering strategies on carbon-related clusters in silicon

Interaction of n -type dopants with oxygen in silicon and germanium

The Ci(SiI)n defect in neutron-irradiated silicon

IR studies of the oxygen and carbon precipitation processes in electron irradiated tin-doped silicon

Semi-empirical modelling of the di-interstitial defect in silicon

An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

The CiOi(SiI)2 defect in silicon: density functional theory calculations

Suchergebnisse filtern