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Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations

IEEE electron device letters, 2008-05, Vol.29 (5), p.445-448

2008

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Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

IEEE electron device letters, 2006-09, Vol.27 (9), p.765-768

2006

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Low-Voltage High-Speed (18 GHz/1 V) Evanescent-Coupled Thin-Film-Ge Lateral PIN Photodetectors Integrated on Si Waveguide

IEEE photonics technology letters, 2008-09, Vol.20 (17), p.1485-1487

2008

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Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

IEEE electron device letters, 2008-06, Vol.29 (6), p.595-598

2008

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Dark-Current Suppression in Metal-Germanium-Metal Photodetectors Through Dopant-Segregation in NiGe-Schottky Barrier

IEEE electron device letters, 2008-02, Vol.29 (2), p.161-164

2008

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Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

IEEE electron device letters, 2007-11, Vol.28 (11), p.984-986

2007

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Bendability of single-crystal Si MOSFETs investigated on flexible substrate

IEEE electron device letters, 2006-07, Vol.27 (7), p.538-541

2006

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Tensile-Strained Germanium CMOS Integration on Silicon

IEEE electron device letters, 2007-12, Vol.28 (12), p.1117-1119

2007

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High-Speed Metal-Germanium-Metal Configured PIN-Like Ge-Photodetector Under Photovoltaic Mode and With Dopant-Segregated Schottky-Contact Engineering

IEEE photonics technology letters, 2008-12, Vol.20 (23), p.1965-1967

2008

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Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectric

IEEE electron device letters, 2008-01, Vol.29 (1), p.50-53

2008

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Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

IEEE electron device letters, 2007-07, Vol.28 (7), p.603-605

2007

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The impact of uniform strain applied via bonding onto plastic substrate on MOSFET performance

IEEE electron device letters, 2006-01, Vol.27 (1), p.58-61

2006

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Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

IEEE electron device letters, 2006-10, Vol.27 (10), p.811-813

2006

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A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

IEEE electron device letters, 2006-05, Vol.27 (5), p.350-353

2006

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Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

IEEE electron device letters, 2006-10, Vol.27 (10), p.824-826

2006

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Thin Amorphous \hbox\hbox-Based Light-Emitting Device Prepared With Low Thermal Budget

IEEE electron device letters, 2008-03, Vol.29 (3), p.228-231

2008

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Thin Amorphous Si/Si3N4-Based Light-Emitting Device Prepared With Low Thermal Budget

IEEE electron device letters, 2008-03, Vol.29 (3), p.228-231

2008

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CMOS compatible dual metal gate integration with successful V th adjustment on high- k HfTaON by high-temperature metal intermixing

Solid-state electronics, 2007-11, Vol.51 (11), p.1479-1484

2007

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CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing

Solid-state electronics, 2007-11, Vol.51 (11-12), p.1479-1484

2007

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Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform

2007 4th IEEE International Conference on Group IV Photonics, 2007, p.1-3

2007

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Dopant-Segregated Ni-Silicide Schottky-Source/Drain CMOS on Strained-Si/SiGe Multiple Quantum-Well Channel on Bulk-Si

2006 European Solid-State Device Research Conference, 2006, p.290-293

2006

Volltextzugriff (PDF)

CMOS Compatible Dual Metal Gate Integration with Successful Vth Adjustment on High-k HfTaON by High-Temperature Metal Intermixing

2006 European Solid-State Device Research Conference, 2006, p.154-157

2006

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Cells - A novel IOT security approach

2016 IEEE Region 10 Conference (TENCON), 2016, p.3716-3719

2016

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Bounds on the Size of the Likelihood Ratio Test of Independence in a Contingency Table

Journal of multivariate analysis, 1993-05, Vol.45 (2), p.291-304

1993

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Successful transferring of active transistors, rf-passive components and high density interconnect from bulk si to organic substrates

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.675-678

2005

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Evanescent-Coupled Ge p-i-n Photodetectors on Si-Waveguide With SEG-Ge and Comparative Study of Lateral and Vertical p-i-n Configurations

Random Telegraph Signal Noise in Gate-All-Around Si-FinFET With Ultranarrow Body

Low-Voltage High-Speed (18 GHz/1 V) Evanescent-Coupled Thin-Film-Ge Lateral PIN Photodetectors Integrated on Si Waveguide

Ge-Rich (70%) SiGe Nanowire MOSFET Fabricated Using Pattern-Dependent Ge-Condensation Technique

Dark-Current Suppression in Metal-Germanium-Metal Photodetectors Through Dopant-Segregation in NiGe-Schottky Barrier

Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

Bendability of single-crystal Si MOSFETs investigated on flexible substrate

Tensile-Strained Germanium CMOS Integration on Silicon

High-Speed Metal-Germanium-Metal Configured PIN-Like Ge-Photodetector Under Photovoltaic Mode and With Dopant-Segregated Schottky-Contact Engineering

Widely Tunable Work Function TaN/Ru Stacking Layer on HfLaO Gate Dielectric

Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

The impact of uniform strain applied via bonding onto plastic substrate on MOSFET performance

Work-Function Tuning of TaN by High-Temperature Metal Intermixing Technique for Gate-First CMOS Process

A dual-strained CMOS structure through simultaneous formation of relaxed and compressive strained-SiGe-on-insulator

Reduction of Leakage and Low-Frequency Noise in MOS Transistors Through Two-Step RTA of NiSi-Silicide Technology

Thin Amorphous \hbox\hbox-Based Light-Emitting Device Prepared With Low Thermal Budget

Thin Amorphous Si/Si3N4-Based Light-Emitting Device Prepared With Low Thermal Budget

CMOS compatible dual metal gate integration with successful V th adjustment on high- k HfTaON by high-temperature metal intermixing

CMOS compatible dual metal gate integration with successful Vth adjustment on high-k HfTaON by high-temperature metal intermixing

Integration of Tensile-Strained Ge p-i-n Photodetector on Advanced CMOS Platform

Dopant-Segregated Ni-Silicide Schottky-Source/Drain CMOS on Strained-Si/SiGe Multiple Quantum-Well Channel on Bulk-Si

CMOS Compatible Dual Metal Gate Integration with Successful Vth Adjustment on High-k HfTaON by High-Temperature Metal Intermixing

Cells - A novel IOT security approach

Bounds on the Size of the Likelihood Ratio Test of Independence in a Contingency Table

Successful transferring of active transistors, rf-passive components and high density interconnect from bulk si to organic substrates

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