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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Applied surface science, 2004-06, Vol.231, p.762-767

2004

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Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy

2007 IEEE Symposium on VLSI Technology, 2007, p.44-45

2007

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Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain

2009 Symposium on VLSI Technology, 2009, p.212-213

2009

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Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Journal of electronic materials, 1998-04, Vol.27 (4), p.229-232

1998

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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Applied surface science, 2004, Vol.231-32, p.762-767

2004

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Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000-01, Vol.18 (1), p.509-513

2000

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Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy : III-V nitrides and silicon carbide

Journal of electronic materials, 1998, Vol.27 (4), p.229-232

1998

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Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates

2010 International Electron Devices Meeting, 2010, p.9.1.1-9.1.4

2010

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Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O2+, and CsC6− primary ion beams

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2002-03, Vol.20 (2), p.507-511

2002

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High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009, p.90-92

2009

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Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs + , O 2 + , and CsC 6 − primary ion beams

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-03, Vol.20 (2), p.507-511

2002

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Determination of Inositol phosphates IP3 - IP6 in rapeseed and rapeseed meal by an HPLC method, 2: Investigations of rapeseed and rapeseed meal and comparison with other methods

Fett (Germany), 1995-10, Vol.97 (10)

1995

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Determination of inositol phosphates IP3 - IP6 in rapeseed and rapeseed meal by an HPLC method, 1: Method

Fett (Germany), 1995-07, Vol.97 (7-8)

1995

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A Case Study on Measuring Statistical Data in the Tor Anonymity Network

Financial Cryptography and Data Security, p.203-215

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Safety in STEM Education Standards and Frameworks: A Comparative Content Analysis

Technology and engineering teacher, 2020-11, Vol.80 (3), p.34-38

2020

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Application of stator current limiter: Impact during system voltage decrease

2013 IEEE Power & Energy Society General Meeting, 2013, p.1-5

2013

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Unterdr ckung des Bl hens bei einer Kurztagspflanze trotz Kurztages; Ver nderungen der Sukkulenz

Die Naturwissenschaften, 1946, Vol.33 (6), p.190-190

1946

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Einhaltung zukünftiger Emissionsvorschriften durch gekühlte Abgasrückführung

MTZ. Motortechnische Zeitschrift, 1999, Vol.60 (7-8), p.470-475

1999

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Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Strained Si Channel MOSFETs with Embedded Silicon Carbon Formed by Solid Phase Epitaxy

Fully depleted extremely thin SOI technology fabricated by a novel integration scheme featuring implant-free, zero-silicon-loss, and faceted raised source/drain

Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Sputtered depth scales of multi-layered samples with in situ laser interferometry: arsenic diffusion in Si/SiGe layers

Secondary ion mass spectrometry depth profiling of ultrashallow phosphorous in silicon

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy : III-V nitrides and silicon carbide

Wafer scale fabrication of carbon nanotube FETs with embedded poly-gates

Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices

Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs+, O2+, and CsC6− primary ion beams

High-κ/metal gate low power bulk technology - Performance evaluation of standard CMOS logic circuits, microprocessor critical path replicas, and SRAM for 45nm and beyond

Comparison of secondary ion mass spectroscopy analysis of ultrashallow phosphorus using Cs + , O 2 + , and CsC 6 − primary ion beams

Determination of Inositol phosphates IP3 - IP6 in rapeseed and rapeseed meal by an HPLC method, 2: Investigations of rapeseed and rapeseed meal and comparison with other methods

Determination of inositol phosphates IP3 - IP6 in rapeseed and rapeseed meal by an HPLC method, 1: Method

A Case Study on Measuring Statistical Data in the Tor Anonymity Network

Safety in STEM Education Standards and Frameworks: A Comparative Content Analysis

Application of stator current limiter: Impact during system voltage decrease

Unterdr ckung des Bl hens bei einer Kurztagspflanze trotz Kurztages; Ver nderungen der Sukkulenz

Einhaltung zukünftiger Emissionsvorschriften durch gekühlte Abgasrückführung

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