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Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Journal of electronic materials, 2015-05, Vol.44 (5), p.1293-1299

2015

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Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Materials science forum, 2014-02, Vol.778-780, p.332-337

2014

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Materials science forum, 2014-02, Vol.778-780, p.328-331

2014

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Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1910-1923

2010

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Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Materials science forum, 2014-02, Vol.778-780, p.103-108

2014

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Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.85-89, Article 85

2015

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The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.217-220

2013

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Reflectance analysis on the MOCVD growth of AlN on Si(111) by the virtual interface model

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.385-388

2015

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Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.319-322

2015

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Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

Materials science forum, 2012-05, Vol.717-720, p.327-330

2012

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Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

Journal of electronic materials, 2013-05, Vol.42 (5), p.794-798

2013

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Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

MRS proceedings, 2012, Vol.1433 (1), p.53-58, Article mrss12-1433-h02-04

2012

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.565-571

2008

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IEEE_Xplore

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

Materials science forum, 2006-10, Vol.527-529, p.175-178

2006

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Defect Reduction in SiC Growth Using Physical Vapor Transport

MRS proceedings, 2010-01, Vol.1246 (1), Article 1246-B01-04

2010

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Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging

Materials science forum, 2006-10, Vol.527-529, p.721-724

2006

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Materials science forum, 2012, Vol.717-720, p.137-140

2012

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Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Materials science forum, 2010-01, Vol.645-648, p.291-294, Article 291

2010

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Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

Materials science forum, 2011-03, Vol.679-680, p.269-272

2011

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Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

Journal of electronic materials, 2014-12, Vol.44 (5)

2014

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Growth and Characterization of N-Doped SiC Films from Trimethylsilane

Materials science forum, 2000-05, Vol.338-342, p.273-276

2000

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Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Materials science forum, 2012-05, Vol.717-720, p.343-346

2012

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Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Reflectance analysis on the MOCVD growth of AlN on Si(111) by the virtual interface model

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

Defect Reduction in SiC Growth Using Physical Vapor Transport

Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Progress in Growth of Thick Epitaxial Layers on 4 Degree Off-Axis 4H SiC Substrates

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

Growth and Characterization of N-Doped SiC Films from Trimethylsilane

Synchrotron X-Ray Topography Studies of the Propagation and Post-Growth Mutual Interaction of Threading Growth Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

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