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High Quality 150 mm 4H SiC Wafers for Power Device Production

Materials science forum, 2015-06, Vol.821-823, p.56-59

2015

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Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

Journal of electronic materials, 2015-05, Vol.44 (5), p.1293-1299

2015

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Materials science forum, 2014-02, Vol.778-780, p.328-331

2014

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Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Materials science forum, 2014-02, Vol.778-780, p.332-337

2014

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Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Journal of applied physics, 2014-10, Vol.116 (16)

2014

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Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1910-1923

2010

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Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

Materials science forum, 2014-02, Vol.778-780, p.103-108

2014

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The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Materials science forum, 2013-01, Vol.740-742, p.217-220

2013

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Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.85-89

2015

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Reflectance analysis on the MOCVD growth of AlN on Si(111) by the virtual interface model

Physica status solidi. C, 2015-04, Vol.12 (4-5), p.385-388

2015

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Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

Journal of electronic materials, 2013-05, Vol.42 (5), p.794-798

2013

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Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Materials science forum, 2015-06, Vol.821-823, p.319-322

2015

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.565-571

2008

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IEEE_Xplore

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

Materials science forum, 2012-05, Vol.717-720, p.327-330

2012

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Advanced chemical vapor deposition silicon carbide barrier technology for ultralow permeability applications

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-09, Vol.24 (5), p.1706-1713

2006

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Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

MRS proceedings, 2012, Vol.1433 (1), p.53-58, Article mrss12-1433-h02-04

2012

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Defect Reduction in SiC Growth Using Physical Vapor Transport

MRS proceedings, 2010-01, Vol.1246 (1), Article 1246-B01-04

2010

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Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

Materials science forum, 2006-10, Vol.527-529, p.175-178

2006

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Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging

Materials science forum, 2006-01, Vol.527-529, p.721-724

2006

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Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC

MRS proceedings, 2008, Vol.1069, Article 1069-D01-04

2008

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A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Journal of applied physics, 2014-09, Vol.116 (10)

2014

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Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Materials science forum, 2010-01, Vol.645-648, p.291-294

2010

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Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

Materials science forum, 2011-03, Vol.679-680, p.269-272

2011

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Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

Journal of electronic materials, 2014-12, Vol.44 (5)

2014

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High Quality 150 mm 4H SiC Wafers for Power Device Production

Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Measurement of Critical Thickness for the Formation of Interfacial Dislocations and Half Loop Arrays in 4H-SiC Epilayer via X-Ray Topography

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116 , 104905 (2014)]

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

Progress in Large-Area 4H-SiC Epitaxial Layer Growth in a Warm-Wall Planetary Reactor

The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC

Stacking Fault Formation via 2D Nucleation in PVT Grown 4H-SiC

Reflectance analysis on the MOCVD growth of AlN on Si(111) by the virtual interface model

Quantitative Comparison Between Dislocation Densities in Offcut 4H-SiC Wafers Measured Using Synchrotron X-ray Topography and Molten KOH Etching

Studies of the Origins of Half Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

Basal Plane Dislocation Multiplication via the Hopping Frank-Read Source Mechanism and Observations of Prismatic Glide in 4H-SiC

Advanced chemical vapor deposition silicon carbide barrier technology for ultralow permeability applications

Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

Defect Reduction in SiC Growth Using Physical Vapor Transport

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging

Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC

A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images

Characterization of 100 mm Diameter 4H-Silicon Carbide Crystals with Extremely Low Basal Plane Dislocation Density

Formation Mechanism of Stacking Faults in PVT 4H-SiC Created by Deflection of Threading Dislocations with Burgers Vector c+a

Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

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