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Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

Journal of crystal growth, 2012-08, Vol.352 (1), p.39-42

2012

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Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

Journal of electronic materials, 2015-05, Vol.44 (5), p.1268-1274

2015

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New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes

Microelectronic engineering, 2000, Vol.50 (1), p.15-23

Loboda, M.J

2000

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.565-571

2008

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IEEE_Xplore

Characterization of the mechanical properties of a–SiC: H films

Journal of materials research, 1993-11, Vol.8 (11), p.2908-2915

1993

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Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

Journal of applied physics, 2005-06, Vol.97 (11), p.113705-113705-6

2005

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Charge Bursts Through Dielectric Layers of 4H-SiC/SiO2 Metal Oxide Semiconductor Capacitors

2008 IEEE International Reliability Physics Symposium, 2008, p.623-624

2008

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IEEE_Xplore

Residual phase noise measurements of VHF, UHF, and microwave components

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 1994-09, Vol.41 (5), p.664-679

1994

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IEEE_Xplore

Safe Precursor Gas for Broad Replacement of SiH4 in Plasma Processes Employed in Integrated Circuit Production

MRS proceedings, 1996, Vol.447

1996

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Safe Precursor Gas for Broad Replacement of SiH 4 in Plasma Processes Employed in Integrated Circuit Production

MRS proceedings, 1996, Vol.447, Article 145

1996

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Extremely low-phase-noise SAW resonators and oscillators: design and performance

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 1988-11, Vol.35 (6), p.657-667

1988

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IEEE_Xplore

Frequency Stability of L-Band, Two-Port Dielectric Resonator Oscillators

IEEE transactions on microwave theory and techniques, 1987-12, Vol.35 (12), p.1334-1339

1987

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IEEE_Xplore

Frequency Stability of L-Band, Two-Port Dielectric Resonator Oscillators

1987 IEEE MTT-S International Microwave Symposium Digest, 1987, Vol.2, p.859-862

1987

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IEEE_Xplore

Residual phase noise measurements of VHF, UHF, and microwave components

Proceedings of the 43rd Annual Symposium on Frequency Control, 1989, p.349-359

1989

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The characterization of trimethylsilane based PE-CVD /spl alpha/-SiCO:H low-k films

Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407), 2000, p.52-54

2000

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IEEE_Xplore

Temperature sensitivity of dielectric resonators and dielectric resonator oscillators

Proceedings of the 42nd Annual Frequency Control Symposium, 1988, 1988, p.263-271

1988

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Manufacturing semiconductor integrated circuits with built-in hermetic equivalent reliability

1996 Proceedings 46th Electronic Components and Technology Conference, 1996, p.897-901

1996

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IEEE_Xplore

Extremely Low Phase Noise SAW Resonator Oscillator Design and Performance

IEEE 1987 Ultrasonics Symposium, 1987, p.47-52

1987

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Reduction of Close-to-Carrier Phase Noise in Surface Acoustic Wave Resonators

IEEE 1987 Ultrasonics Symposium, 1987, p.43-46

1987

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Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers

Materials science forum, 2009-01, Vol.615-617, p.283-286

2009

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Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

Materials science forum, 2009-01, Vol.600-603, p.485-488

2009

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Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications

Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC

New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes

A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

Characterization of the mechanical properties of a–SiC: H films

Nonuniformities of electrical resistivity in undoped 6H-SiC wafers

Charge Bursts Through Dielectric Layers of 4H-SiC/SiO2 Metal Oxide Semiconductor Capacitors

Residual phase noise measurements of VHF, UHF, and microwave components

Safe Precursor Gas for Broad Replacement of SiH4 in Plasma Processes Employed in Integrated Circuit Production

Safe Precursor Gas for Broad Replacement of SiH 4 in Plasma Processes Employed in Integrated Circuit Production

Extremely low-phase-noise SAW resonators and oscillators: design and performance

Frequency Stability of L-Band, Two-Port Dielectric Resonator Oscillators

Frequency Stability of L-Band, Two-Port Dielectric Resonator Oscillators

Residual phase noise measurements of VHF, UHF, and microwave components

The characterization of trimethylsilane based PE-CVD /spl alpha/-SiCO:H low-k films

Temperature sensitivity of dielectric resonators and dielectric resonator oscillators

Manufacturing semiconductor integrated circuits with built-in hermetic equivalent reliability

Extremely Low Phase Noise SAW Resonator Oscillator Design and Performance

Reduction of Close-to-Carrier Phase Noise in Surface Acoustic Wave Resonators

Carrier Generation Lifetime in 4H-SiC Epitaxial Wafers

Generation and Recombination Carrier Lifetimes in 4H SiC Epitaxial Wafers

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