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Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.62-65

2002

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Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry

Journal of crystal growth, 2016-08, Vol.448, p.89-92

2016

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Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

Semiconductors (Woodbury, N.Y.), 2015-11, Vol.49 (11), p.1410-1414

2015

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Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1537-1541

2017

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Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements

Semiconductors (Woodbury, N.Y.), 2016-02, Vol.50 (2), p.261-265

2016

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The elastic strain and composition of self-assembled GeSi islands on Si(001)

Thin solid films, 2000-05, Vol.367 (1-2), p.171-175

2000

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Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

Semiconductors (Woodbury, N.Y.), 2013-11, Vol.47 (11), p.1496-1499

2013

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Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1511-1514

2016

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Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

Semiconductors (Woodbury, N.Y.), 2013-12, Vol.47 (12), p.1556-1561

2013

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Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional [Si.sub.1-x][Ge.sub.x]/Si structures

Journal of experimental and theoretical physics, 2013-11, Vol.117 (5), p.912

2013

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Structural and optical properties of metastable SiGe/Si films with a low germanium concentration

Physics of the solid state, 2014-10, Vol.56 (10), p.1957-1966

2014

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Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure

Physica. E, Low-dimensional systems & nanostructures, 2014-03, Vol.57, p.42-46

2014

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Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge islands

Semiconductors (Woodbury, N.Y.), 2012-11, Vol.46 (11), p.1418

2012

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Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

Semiconductors (Woodbury, N.Y.), 2013-03, Vol.47 (3), p.427-432

2013

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Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained [Si.sub.1-x][Ge.sub.x] buffer layers

Semiconductors (Woodbury, N.Y.), 2012-05, Vol.46 (5), p.647

2012

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Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

Semiconductors (Woodbury, N.Y.), 2011-02, Vol.45 (2), p.198-202

2011

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Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.329-334

2010

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Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

Semiconductors (Woodbury, N.Y.), 2011-02, Vol.45 (2), p.225-229

2011

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Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Optical materials, 2005-02, Vol.27 (5), p.818-821

2005

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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Thin solid films, 2008-11, Vol.517 (1), p.398-400

2008

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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Thin solid films, 2008-11, Vol.517 (1), p.385-387

2008

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Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Physica. E, Low-dimensional systems & nanostructures, 2009-05, Vol.41 (6), p.935-938

2009

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Secondary cluster ions [Ge.sup.-.sub.2] and [Ge.sup.-.sub.3] for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

Semiconductors (Woodbury, N.Y.), 2010-03, Vol.44 (3), p.401

2010

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Radiation hardness of GeSi heterostructures with thin Ge layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.191-194

2008

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Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire

Semiconductors, 2022, Vol.56 (9), p.633

2022

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Strain-driven alloying: effect on sizes, shape and photoluminescence of GeSi/Si(001) self-assembled islands

Features of SOI substrates heating in MBE growth process obtained by low-coherence tandem interferometry

Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen

Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements

The elastic strain and composition of self-assembled GeSi islands on Si(001)

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry

Dynamics of the phase transitions in the system of nonequilibrium charge carriers in quantum-dimensional [Si.sub.1-x][Ge.sub.x]/Si structures

Structural and optical properties of metastable SiGe/Si films with a low germanium concentration

Coulomb centers assisted tunneling in a δ-doped triple barrier SiGe heterostructure

Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge islands

Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers

Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained [Si.sub.1-x][Ge.sub.x] buffer layers

Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers

Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures

Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands

Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer

Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Electroluminescence and photoconductivity of GeSi heterostructures with self-assembled islands in the wavelength range 1.3–1.55 μm

Secondary cluster ions [Ge.sup.-.sub.2] and [Ge.sup.-.sub.3] for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

Radiation hardness of GeSi heterostructures with thin Ge layers

Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire

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