UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Microelectronic engineering, 2018-02, Vol.187-188, p.66-77

2018

Volltextzugriff (PDF)

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Materials science forum, 2020-07, Vol.1004, p.725-730

2020

Volltextzugriff (PDF)

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Applied sciences, 2020-04, Vol.10 (7), p.2440

2020

Volltextzugriff (PDF)

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied physics letters, 2012-10, Vol.101 (17)

2012

Volltextzugriff (PDF)

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

AIP advances, 2016-07, Vol.6 (7)

2016

Volltextzugriff (PDF)

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

AIP advances, 2020-12, Vol.10 (12), p.125017-125017-7

2020

Volltextzugriff (PDF)

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Applied physics letters, 2012-02, Vol.100 (6), p.063511-063511-4

2012

Volltextzugriff (PDF)

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies (Basel), 2019, Vol.12 (14), p.2655

2019

Volltextzugriff (PDF)

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Nanomaterials (Basel, Switzerland), 2021-12, Vol.11 (12), p.3316

2021

Volltextzugriff (PDF)

Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Nano letters, 2011-11, Vol.11 (11), p.4612-4618

2011

Volltextzugriff (PDF)

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Journal of crystal growth, 2020-06, Vol.539, p.125624, Article 125624

2020

Volltextzugriff (PDF)

Challenges for energy efficient wide band gap semiconductor power devices

Physica status solidi. A, Applications and materials science, 2014-09, Vol.211 (9), p.2063-2071

2014

Volltextzugriff (PDF)

Advances in the fabrication of graphene transistors on flexible substrates

Beilstein journal of nanotechnology, 2017, Vol.8 (1), p.467-474

2017

Volltextzugriff (PDF)

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Microelectronic engineering, 2024-01, Vol.283, p.112103, Article 112103

2024

Volltextzugriff (PDF)

Physics and technology of gallium nitride materials for power electronics

La rivista del Nuovo cimento, 2018-12, Vol.41 (12), p.625-681

2018

Volltextzugriff (PDF)

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Materials, 2022-01, Vol.15 (3), p.830

2022

Volltextzugriff (PDF)

Metal‐Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

ChemistryOpen (Weinheim), 2015-08, Vol.4 (4), p.523-532

2015

Volltextzugriff (PDF)

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

Nanoscale research letters, 2011-02, Vol.6 (1), p.118-118, Article 118

2011

Volltextzugriff (PDF)

Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Carbon (New York), 2019-08, Vol.149, p.546-555

2019

Volltextzugriff (PDF)

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Applied sciences, 2021-11, Vol.11 (22), p.11052

2021

Volltextzugriff (PDF)

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Materials science forum, 2018-06, Vol.924, p.339-344, Article 339

2018

Volltextzugriff (PDF)

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

C (Basel), 2019-09, Vol.5 (3), p.53

2019

Volltextzugriff (PDF)

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Materials, 2023-08, Vol.16 (16), p.5638

2023

Volltextzugriff (PDF)

Nanotechnology for Electronic Materials and Devices

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (19), p.3319

2022

Volltextzugriff (PDF)

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Japanese Journal of Applied Physics, 2018-05, Vol.57 (5)

2018

Volltextzugriff (PDF)

1 – 25 von 180

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(163)
Mit Volltextzugriff
(159)

Publikationsform

Sprache

Englisch
(172)

Erscheinungsjahr

n.n

Thema

Science & Technology
(112)
Physical Sciences
(98)
Materials Science
(89)
Technology
(86)
Physics
(77)
Materials Science, Multidisciplinary
(67)
Physics, Applied
(57)
Chemistry
(40)
Thin Films
(39)
Physics, Condensed Matter
(34)
Chemical Vapor Deposition
(25)
Nanoscience & Nanotechnology
(24)
Science & Technology - Other Topics
(24)
Chemistry, Multidisciplinary
(21)
Materials Science, Coatings & Films
(21)
Chemistry, Physical
(20)
Aluminum Oxide
(18)
Exact Sciences And Technology
(18)
Atomic Layer Deposition
(17)
Engineering
(17)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Correlating electron trapping and structural defects in Al2O3 thin films deposited by plasma enhanced atomic layer deposition

Epitaxial NiO gate dielectric on AlGaN/GaN heterostructures

Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition

Mapping the Density of Scattering Centers Limiting the Electron Mean Free Path in Graphene

Comparison between thermal and plasma enhanced atomic layer deposition processes for the growth of HfO2 dielectric layers

Challenges for energy efficient wide band gap semiconductor power devices

Advances in the fabrication of graphene transistors on flexible substrates

Structural and electrical correlation in aluminum nitride thin films grown by plasma enhanced atomic layer deposition as interface insulating layers on silicon carbide (4H-SiC)

Physics and technology of gallium nitride materials for power electronics

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Metal‐Organic Chemical Vapor Deposition (MOCVD) Synthesis of Heteroepitaxial Pr0.7Ca0.3MnO3 Films: Effects of Processing Conditions on Structural/Morphological and Functional Properties

Scanning Probe Microscopy on heterogeneous CaCu3Ti4O12 thin films

Influence of oxide substrates on monolayer graphene doping process by thermal treatments in oxygen

Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials

Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices

Nanotechnology for Electronic Materials and Devices

Determining oxide trapped charges in Al2O3 insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements

Suchergebnisse filtern