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Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Journal of physics. D, Applied physics, 2011-06, Vol.44 (25), p.255302

2011

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Critical issues for interfaces to p-type SiC and GaN in power devices

Applied surface science, 2012-08, Vol.258 (21), p.8324-8333

2012

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Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Semiconductor science and technology, 2014-07, Vol.29 (7), p.75018

2014

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Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Applied physics letters, 2024-01, Vol.124 (1)

2024

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Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Applied surface science, 2017-10, Vol.420, p.331-335

2017

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Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Carbon (New York), 2020-11, Vol.169, p.172-181

2020

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Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

Journal of applied physics, 2022-10, Vol.132 (16)

2022

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A Simple Route to the Synthesis of Pr2O3 High-k Thin Films

Advanced materials (Weinheim), 2003-07, Vol.15 (13), p.1071-1075

2003

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Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

Journal of applied physics, 2015-07, Vol.118 (3)

2015

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Microstructural and Optical Properties Modifications Induced by Plasma and Annealing Treatments of Lanthanum Oxide Sol−Gel Thin Films

Journal of physical chemistry. C, 2009-02, Vol.113 (7), p.2911-2918

2009

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Structural–optical study of high-dielectric-constant oxide films

Applied surface science, 2006-10, Vol.253 (1), p.322-327

2006

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Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures

Journal of applied physics, 2013-08, Vol.114 (8)

2013

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Recent advances on dielectrics technology for SiC and GaN power devices

Applied surface science, 2014-05, Vol.301, p.9-18

2014

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Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Journal of applied physics, 2011-12, Vol.110 (12), p.123703-123703-7

2011

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Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.n/a

2017

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High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

Applied physics letters, 2013-09, Vol.103 (11)

2013

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From micro- to nanotransport properties in Pr2O3-based thin layers

Journal of applied physics, 2005-08, Vol.98 (4)

2005

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Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.1600357-n/a

2017

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Core-shell Zn-doped TiO2-ZnO nanofibers fabricated via a combination of electrospinning and metal-organic chemical vapour deposition

CrystEngComm, 2010-01, Vol.12 (11), p.3858-3865

2010

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Praseodymium Silicate as a High-k Dielectric Candidate: An Insight into the Pr2O3-Film/Si-Substrate Interface Fabricated Through a Metal-Organic Chemical Vapor Deposition Process

Advanced functional materials, 2005-05, Vol.15 (5), p.838-845

2005

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Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices

Materials science forum, 2013-01, Vol.740-742, p.777-780

2013

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A Novel Approach to Synthesizing Calcium Copper Titanate Thin Films with Giant Dielectric Constants

Advanced materials (Weinheim), 2004-06, Vol.16 (11), p.891-895

2004

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Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene

Physica status solidi. C, 2013-08, Vol.10 (7-8), p.1188-1192

2013

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Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2

Applied surface science, 2023-09, Vol.630, p.157476, Article 157476

2023

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Metal−Organic Chemical Vapor Deposition of CeO2 〈100〉 Oriented Films on No-Rolled Hastelloy C276

Chemistry of materials, 2001-12, Vol.13 (12), p.4402-4404

2001

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Structural and transport properties in alloyed Ti/Al Ohmic contacts formed on p-type Al-implanted 4H-SiC annealed at high temperature

Critical issues for interfaces to p-type SiC and GaN in power devices

Thermal stability of the current transport mechanisms in Ni-based Ohmic contacts on n- and p-implanted 4H-SiC

Improvement of Ti/Al/Ti Ohmic contacts on AlGaN/GaN heterostructures by insertion of a thin carbon interfacial layer

Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

Aluminum oxide nucleation in the early stages of atomic layer deposition on epitaxial graphene

Aluminum Frenkel defects cause hysteresis in Al2O3/AlGaN capacitors

A Simple Route to the Synthesis of Pr2O3 High-k Thin Films

Ti/Al/W Ohmic contacts to p-type implanted 4H-SiC

Microstructural and Optical Properties Modifications Induced by Plasma and Annealing Treatments of Lanthanum Oxide Sol−Gel Thin Films

Structural–optical study of high-dielectric-constant oxide films

Nanoscale structural and electrical evolution of Ta- and Ti-based contacts on AlGaN/GaN heterostructures

Recent advances on dielectrics technology for SiC and GaN power devices

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

Effect of SiO2 interlayer on the properties of Al2O3 thin films grown by plasma enhanced atomic layer deposition on 4H‐SiC substrates

High permittivity cerium oxide thin films on AlGaN/GaN heterostructures

From micro- to nanotransport properties in Pr2O3-based thin layers

Ti/Al‐based contacts to p‐type SiC and GaN for power device applications

Core-shell Zn-doped TiO2-ZnO nanofibers fabricated via a combination of electrospinning and metal-organic chemical vapour deposition

Praseodymium Silicate as a High-k Dielectric Candidate: An Insight into the Pr2O3-Film/Si-Substrate Interface Fabricated Through a Metal-Organic Chemical Vapor Deposition Process

Potentialities of Nickel Oxide as Dielectric for GaN and SiC Devices

A Novel Approach to Synthesizing Calcium Copper Titanate Thin Films with Giant Dielectric Constants

Scanning probe microscopy investigation of the mechanisms limiting electronic transport in substrate-supported graphene

Direct atomic layer deposition of ultra-thin Al2O3 and HfO2 films on gold-supported monolayer MoS2

Metal−Organic Chemical Vapor Deposition of CeO2 〈100〉 Oriented Films on No-Rolled Hastelloy C276

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