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Advances in GaN Crystals and Their Applications

Crystals (Basel), 2018-03, Vol.8 (3), p.117

Lo, Ikai

2018

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Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Applied physics letters, 2010-06, Vol.96 (24)

2010

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Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory

IEEE electron device letters, 2016-03, Vol.37 (3), p.280-283

2016

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Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

IEEE electron device letters, 2016-04, Vol.37 (4), p.408-411

2016

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Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy

Crystals (Basel), 2023-06, Vol.13 (6), p.907

2023

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Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

Crystals (Basel), 2022-03, Vol.12 (3), p.417

2022

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Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory

IEEE electron device letters, 2016-05, Vol.37 (5), p.584-587

2016

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Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

AIP advances, 2018-09, Vol.8 (9), p.095208-095208-8

2018

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Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory

IEEE transactions on electron devices, 2016-12, Vol.63 (12), p.4769-4775

2016

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Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (13), p.1922

2023

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Growth of InN hexagonal microdisks

AIP advances, 2016-08, Vol.6 (8), p.085015-085015-7

2016

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Meet Our Editorial Board Member

Recent patents on nanotechnology, 2018-12, Vol.12 (3), p.173-173

Lo, Ikai

2018

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Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

IEEE transactions on electron devices, 2016-11, Vol.63 (11), p.4288-4294

2016

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Green light emission by InGaN/GaN multiple-quantum-well microdisks

Applied physics letters, 2014-03, Vol.104 (10)

2014

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Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Japanese Journal of Applied Physics, 2017-01, Vol.56 (1), p.10303-010303

2017

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Effects of erbium doping of indium tin oxide electrode in resistive random access memory

Applied physics express, 2016-03, Vol.9 (3), p.34202

2016

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Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy

Crystals (Basel), 2020-10, Vol.10 (10), p.899

2020

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InGaN/GaN single-quantum-well microdisks

Applied physics letters, 2012-06, Vol.100 (24)

2012

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Complementary resistive switching behavior for conductive bridge random access memory

Applied physics express, 2016-06, Vol.9 (6), p.64201

2016

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Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Crystals (Basel), 2019-06, Vol.9 (6), p.308

2019

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Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy

AIP advances, 2018-07, Vol.8 (7), p.075116-075116-8

2018

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Self-assembled GaN hexagonal micropyramid and microdisk

Applied physics letters, 2009-02, Vol.94 (6), p.062105-062105-3

2009

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Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory

Applied physics express, 2016-06, Vol.9 (6), p.61501

2016

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Epitaxial growth of M -plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

AIP advances, 2015-12, Vol.5 (12), p.127201-127201-6

2015

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Dresselhaus effect in bulk wurtzite materials

Applied physics letters, 2007-08, Vol.91 (8), p.082110-082110-3

2007

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Advances in GaN Crystals and Their Applications

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy

Growth and Characterization of GaN/InxGa1−xN/InyAl1−yN Quantum Wells by Plasma-Assisted Molecular Beam Epitaxy

Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory

Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

Obtaining Lower Forming Voltage and Self-Compliance Current by Using a Nitride Gas/Indium-Tin Oxide Insulator in Resistive Random Access Memory

Optimization of Ternary InxGa1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

Growth of InN hexagonal microdisks

Meet Our Editorial Board Member

Modifying Indium-Tin-Oxide by Gas Cosputtering for Use as an Insulator in Resistive Random Access Memory

Green light emission by InGaN/GaN multiple-quantum-well microdisks

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

Effects of erbium doping of indium tin oxide electrode in resistive random access memory

Anisotropic Strain on GaN Microdisks Grown by Plasma-Assisted Molecular Beam Epitaxy

InGaN/GaN single-quantum-well microdisks

Complementary resistive switching behavior for conductive bridge random access memory

Indium-Incorporation with InxGa1-xN Layers on GaN-Microdisks by Plasma-Assisted Molecular Beam Epitaxy

Strain of M-plane GaN epitaxial layer grown on β-LiGaO2 (100) by plasma-assisted molecular beam epitaxy

Self-assembled GaN hexagonal micropyramid and microdisk

Reducing operation voltages by introducing a low-k switching layer in indium–tin-oxide-based resistance random access memory

Epitaxial growth of M -plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

Dresselhaus effect in bulk wurtzite materials

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