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The Interleukin 6 −174 C/C Genotype Predicts Greater Rhinovirus Illness

The Journal of infectious diseases, 2010-01, Vol.201 (2), p.199-206

2010

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Interaction of pneumococcal phase variation, host and pressure/gas composition: Virulence expression of NanA, HylA, PspA and CbpA in simulated otitis media

Microbial pathogenesis, 2010-10, Vol.49 (4), p.204-210

2010

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Interaction of phase variation, host and pressure/gas composition: Pneumococcal gene expression of PsaA, SpxB, Ply and LytA in simulated middle ear environments

International journal of pediatric otorhinolaryngology, 2009-10, Vol.73 (10), p.1417-1422

2009

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Interaction of pneumococcal phase variation and middle ear pressure/gas composition: An in vitro model of simulated otitis media

Microbial pathogenesis, 2008-09, Vol.45 (3), p.201-206

2008

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R150: Tumor Necrosis Factor-α Inhibits Middle Ear Sodium Transport

Otolaryngology-head and neck surgery, 2006-08, Vol.135 (2), p.P157-P157

2006

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Age-dependent differential expression of fibronectin variants in skin and airway mucosal wounds

Archives of otolaryngology--head & neck surgery, 2007-09, Vol.133 (9), p.919

2007

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Identification of a pre-mRNA splicing factor, arginine/serine-rich 3 (Sfrs3), and its co-expression with fibronectin in fetal and postnatal rabbit airway mucosal and skin wounds

Biochimica et biophysica acta, 2006, Vol.1762 (1), p.34-45

2006

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The effect of changes in ambient oxygen concentration on the bioelectric properties of middle ear mucosa

American Journal of Physiology: Cell Physiology, 2003-09, Vol.285 (3), p.C618-C622

2003

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Mucosal Expression of Genes Encoding Possible Upstream Regulators of Na+ Transport During Pneumococcal Otitis Media

Acta oto-laryngologica, 2003-06, Vol.123 (5), p.575-582

2003

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The effect of changes in ambient oxygen concentration on the bioelectric properties of middle ear mucosa

American Journal of Physiology: Cell Physiology, 2003-09, Vol.54 (3), p.C618-C622

2003

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Nasal secretion concentrations of IL-5, IL-6, and IL-10 in children with and without upper respiratory tract viruses

Archives of otolaryngology--head & neck surgery, 2010-03, Vol.136 (3), p.281

2010

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Hyperproliferation of conjunctival fibroblasts from patients with cicatricial pemphigoid

Archives of ophthalmology (1960), 1989-07, Vol.107 (7), p.1064

1989

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Inhibition of Hydroxymethylglutaryl-Coenzyme A Synthase by L-659,699

Proceedings of the National Academy of Sciences - PNAS, 1987-11, Vol.84 (21), p.7488-7492

1987

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Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2778-2785

2007

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Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.2871-2877

2007

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Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

IEEE electron device letters, 2008-01, Vol.29 (1), p.89-92

2008

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N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

IEEE electron device letters, 2007-02, Vol.28 (2), p.164-167

2007

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Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering

Applied physics letters, 2007-01, Vol.90 (2)

2007

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Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

IEEE electron device letters, 2008-01, Vol.29 (1), p.77-79

2008

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I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering

IEEE electron device letters, 2006-12, Vol.27 (12), p.975-977

2006

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Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Applied physics letters, 2007-11, Vol.91 (20), p.202105-202105-3

2007

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Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

IEEE electron device letters, 2008-04, Vol.29 (4), p.382-385

2008

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Gate-all-around quantum-wire field-effect transistor with Dopant Segregation at Metal-Semiconductor-Metal heterostucture

2009 Symposium on VLSI Technology, 2009, p.92-93

2009

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Wide V and V Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics

IEEE electron device letters, 2007-04, Vol.28 (4), p.258-260

2007

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Single silicide comprising Nickel-Dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by Aluminum implant

2009 Symposium on VLSI Technology, 2009, p.106-107

2009

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The Interleukin 6 −174 C/C Genotype Predicts Greater Rhinovirus Illness

Interaction of pneumococcal phase variation, host and pressure/gas composition: Virulence expression of NanA, HylA, PspA and CbpA in simulated otitis media

Interaction of phase variation, host and pressure/gas composition: Pneumococcal gene expression of PsaA, SpxB, Ply and LytA in simulated middle ear environments

Interaction of pneumococcal phase variation and middle ear pressure/gas composition: An in vitro model of simulated otitis media

R150: Tumor Necrosis Factor-α Inhibits Middle Ear Sodium Transport

Age-dependent differential expression of fibronectin variants in skin and airway mucosal wounds

Identification of a pre-mRNA splicing factor, arginine/serine-rich 3 (Sfrs3), and its co-expression with fibronectin in fetal and postnatal rabbit airway mucosal and skin wounds

The effect of changes in ambient oxygen concentration on the bioelectric properties of middle ear mucosa

Mucosal Expression of Genes Encoding Possible Upstream Regulators of Na+ Transport During Pneumococcal Otitis Media

The effect of changes in ambient oxygen concentration on the bioelectric properties of middle ear mucosa

Nasal secretion concentrations of IL-5, IL-6, and IL-10 in children with and without upper respiratory tract viruses

Hyperproliferation of conjunctival fibroblasts from patients with cicatricial pemphigoid

Inhibition of Hydroxymethylglutaryl-Coenzyme A Synthase by L-659,699

Strain and Materials Engineering for the I-MOS Transistor With an Elevated Impact-Ionization Region

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Nickel-Silicide:Carbon Contact Technology for N-Channel MOSFETs With Silicon-Carbon Source/Drain

N-channel FinFETs With 25-nm Gate Length and Schottky-Barrier Source and Drain Featuring Ytterbium Silicide

Performance enhancement of n-channel impact-ionization metal-oxide-semiconductor transistor by strain engineering

Strained Silicon-Germanium-On-Insulator n-MOSFET With Embedded Silicon Source-and-Drain Stressors

I-MOS Transistor With an Elevated Silicon-Germanium Impact-Ionization Region for Bandgap Engineering

Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing

Achieving Conduction Band-Edge Schottky Barrier Height for Arsenic-Segregated Nickel Aluminide Disilicide and Implementation in FinFETs With Ultra-Narrow Fin Widths

Gate-all-around quantum-wire field-effect transistor with Dopant Segregation at Metal-Semiconductor-Metal heterostucture

Wide V and V Tunability for Metal-Gated MOS Devices With HfLaO Gate Dielectrics

Single silicide comprising Nickel-Dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by Aluminum implant

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