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Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodes

Journal of applied physics, 2023-09, Vol.134 (9)

2023

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Dependence of oxygen impurity concentration in AlN on the surface roughness during growth

Journal of applied physics, 2024-04, Vol.135 (16)

2024

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Role of trapezoidal defects in enhancing the yellow luminescence of high-Al content n-type AlGaN films

Applied physics letters, 2024-08, Vol.125 (6)

2024

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Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes

AIP advances, 2024-03, Vol.14 (3), p.035005-035005-5

2024

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Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Nanoscale research letters, 2020-10, Vol.15 (1), p.191-191, Article 191

2020

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The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

Nanoscale research letters, 2021-11, Vol.16 (1), p.161-161, Article 161

2021

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The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

AIP advances, 2022-09, Vol.12 (9), p.095106-095106-8

2022

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Monotonic variation in carbon-related defects with Fermi level in different conductive types of GaN

AIP advances, 2021-08, Vol.11 (8), p.085321-085321-5

2021

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Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

Nanoscale research letters, 2020-02, Vol.15 (1), p.38-38, Article 38

2020

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The influence of temperature and TMGa flow rate on the quality of p-GaN

AIP advances, 2021-03, Vol.11 (3), p.035109-035109-5

2021

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Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness

Journal of electronic materials, 2020-06, Vol.49 (6), p.3877-3882

2020

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The Global Prevalence of Amblyopia in Children: A Systematic Review and Meta-Analysis

Frontiers in pediatrics, 2022-05, Vol.10, p.819998-819998

2022

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Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

Journal of applied physics, 2015-07, Vol.118 (3)

2015

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GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

Journal of semiconductors, 2021-11, Vol.42 (11), p.112801-73

2021

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The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells

Journal of materials research and technology, 2022-11, Vol.21, p.2228-2237

2022

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Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

Nanoscale research letters, 2019-03, Vol.14 (1), p.88-8, Article 88

2019

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Performance improvement of GaN-based vertical cavity surface emitting laser by employing a hole storage layer and enhancing the carrier transport behavior

Results in physics, 2024-05, Vol.60, p.107690, Article 107690

2024

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Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness

Materials research express, 2020-11, Vol.7 (11), p.115902

2020

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Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors

Nanomaterials (Basel, Switzerland), 2022-09, Vol.12 (18), p.3148

2022

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Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Journal of alloys and compounds, 2018-01, Vol.731, p.243-247

2018

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Role of inserting an InGaN strain release interlayer in AlGaN growth

Results in physics, 2023-08, Vol.51, p.106716, Article 106716

2023

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Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells

Results in physics, 2023-03, Vol.46, p.106305, Article 106305

2023

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Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Crystals (Basel), 2022-03, Vol.12 (3), p.339

2022

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Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

Results in physics, 2021-12, Vol.31, p.105057, Article 105057

2021

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The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation

Crystals (Basel), 2022-02, Vol.12 (2), p.171

2022

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Investigation of degradation mechanism in GaN-based blue and ultraviolet laser diodes

Dependence of oxygen impurity concentration in AlN on the surface roughness during growth

Role of trapezoidal defects in enhancing the yellow luminescence of high-Al content n-type AlGaN films

Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H2/NH3 Mixed Gas for Improving Structural and Optical Properties

The melt-back etching effect of the residual Ga in the reactor for GaN grown on (111) Si

Monotonic variation in carbon-related defects with Fermi level in different conductive types of GaN

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN

The influence of temperature and TMGa flow rate on the quality of p-GaN

Comparative Study on the Luminescence Properties of Violet Light-Emitting InGaN/GaN Multiple Quantum Wells with Different Barrier Thickness

The Global Prevalence of Amblyopia in Children: A Systematic Review and Meta-Analysis

Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

GaN-based blue laser diode with 6.0 W of output power under continuous-wave operation at room temperature

The direct evidence of the composition pulling effect and its role in InGaN multiple quantum wells

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence

Performance improvement of GaN-based vertical cavity surface emitting laser by employing a hole storage layer and enhancing the carrier transport behavior

Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-layer and i-layer thickness

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors

Improvement of slope efficiency of GaN-Based blue laser diodes by using asymmetric MQW and InxGa1-xN lower waveguide

Role of inserting an InGaN strain release interlayer in AlGaN growth

Study on the luminescence mechanism influenced by the inhomogeneous growth of InGaN/GaN multiple quantum wells

Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells

Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

The Investigation of Carrier Leakage Mechanism Based on ABC-Models in InGaN/GaN MQW and Its Effect on Internal Quantum Efficiency under Optical Excitation

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