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Soil dynamics and earthquake engineering (1984), 2017-11, Vol.102, p.124-136
2017
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International journal of operations & production management, 2013-01, Vol.33 (9), p.1166-1201
2013
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International journal of project management, 2016-10, Vol.34 (7), p.1150-1166
2016
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Nanotechnology, 2011-06, Vol.22 (25), p.254016-254016
2011
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International journal of production research, 2012-02, Vol.50 (3), p.867-878
2012
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Synthetic metals, 2009-06, Vol.159 (12), p.1131-1134
2009
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IEEE electron device letters, 2011-11, Vol.32 (11), p.1585-1587
2011
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Team performance management, 2015-10, Vol.21 (7/8), p.361-385
2015
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IEEE electron device letters, 2011-03, Vol.32 (3), p.390-392
2011
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2018 1st IEEE International Conference on Knowledge Innovation and Invention (ICKII), 2018, p.142-145
2018
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IEEE electron device letters, 2011-11, Vol.32 (11), p.1585-1587
2011
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Good Endurance and Memory Window for \hbox Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer
2011
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Current applied physics, 2010-01, Vol.10 (1), p.e75-e78
2010
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2011 International Reliability Physics Symposium, 2011, p.MY.8.1-MY.8.5
2011
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2010 IEEE International Conference on Integrated Circuit Design and Technology, 2010, p.20-23
2010
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2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2009, p.525-528
2009
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2009 International Symposium on VLSI Technology, Systems, and Applications, 2009, p.39-40
2009
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International journal of business, marketing, and decision sciences, 2012-09, Vol.5 (2), p.51
2012
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Proceedings of 2010 International Symposium on VLSI Technology, System and Application, 2010, p.146-147
2010
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Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, 2011, p.1-2
2011
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IEEE electron device letters, 2011-11, Vol.32 (11), p.1585
2011
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IEEE electron device letters, 2011-11, Vol.32 (11), p.1585-1587
2011
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IEEE electron device letters, 2011-03, Vol.32 (3), p.390
2011
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IEEE electron device letters, 2011-03, Vol.32 (3), p.390-392
2011
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Current applied physics, 2010, Vol.10 (1), p.e75-e78
2010
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