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Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280–320 nm) detection

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-09, Vol.122 (3), p.196-200

2005

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The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-01, Vol.126 (1), p.33-36

2006

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The improvements of GaN p–i–n UV sensor on 1° off-axis sapphire substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-07, Vol.121 (1), p.86-91

2005

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High-temperature high-humidity and electrical static discharge stress effects on GaN p–i–n UV sensor

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-07, Vol.121 (1), p.29-33

2005

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The improvements of GaN p-i-n UV sensor on 1 deg off-axis sapphire substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-07, Vol.121 (1-2), p.86-91

2005

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ETCHING SELECTIVITY AND SURFACE PROFILE OF GaN IN THE Ni, SiO2 AND PHOTORESIST MASKS USING AN INDUCTIVELY COUPLED PLASMA

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 3A, pp. 1242-1243. 2001, 2001, Vol.40 (3A), p.1242-1243

2001

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Etching Selectivity and Surface Profile of GaN in the Ni, SiO 2 and Photoresist Masks Using an Inductively Coupled Plasma

Japanese Journal of Applied Physics, 2001-03, Vol.40 (3R), p.1242

2001

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Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN layer for the UV-B (280–320 nm) detection

The improvement of GaN p-i-n UV sensor by 8-pair AlGaN/GaN superlattices structure

The improvements of GaN p–i–n UV sensor on 1° off-axis sapphire substrate

High-temperature high-humidity and electrical static discharge stress effects on GaN p–i–n UV sensor

The improvements of GaN p-i-n UV sensor on 1 deg off-axis sapphire substrate

ETCHING SELECTIVITY AND SURFACE PROFILE OF GaN IN THE Ni, SiO2 AND PHOTORESIST MASKS USING AN INDUCTIVELY COUPLED PLASMA

Etching Selectivity and Surface Profile of GaN in the Ni, SiO 2 and Photoresist Masks Using an Inductively Coupled Plasma

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