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High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

Applied physics letters, 2022-02, Vol.120 (6)

2022

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A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

Chinese physics B, 2022-11, Vol.31 (11), p.117105-549

2022

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Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

Chinese physics B, 2023-03, Vol.32 (3), p.37303-535

2023

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Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

IEEE journal of the Electron Devices Society, 2021, Vol.9, p.756-762

2021

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High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

中国物理B（英文版）, 2022, Vol.31 (2), p.613-618

2022

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InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.72-77

2023

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Dynamic Hand Gesture Recognition Based on Signals From Specialized Data Glove and Deep Learning Algorithms

IEEE transactions on instrumentation and measurement, 2021, Vol.70, p.1-14

2021

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Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Chinese physics B, 2023-11, Vol.32 (12), p.127102

2023

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Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1563-1569

2021

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High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1383-1386

2024

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Switchable optical trapping and manipulation enabled by polarization-modulated multifunctional phase-change metasurfaces

Journal of physics. D, Applied physics, 2024-10, Vol.57 (42), p.425104

2024

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High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications

IEEE transactions on electron devices, 2023-01, Vol.70 (1), p.1-5

2023

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High-Performance AlGaN/GaN HEMTs With Hybrid Schottky-Ohmic Drain for Ka-Band Applications

IEEE transactions on electron devices, 2022-08, Vol.69 (8), p.4188-4193

2022

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Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment

IEEE electron device letters, 2022-10, Vol.43 (10), p.1621-1624

2022

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Pantoprazole suppresses carcinogenesis and growth of hepatocellular carcinoma by inhibiting glycolysis and Na+/H+ exchange

Drug development research, 2024-06, Vol.85 (4), p.e22198-n/a

2024

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A 130%-Tuning-Range Switchable Tri-Core Voltage-Controlled Oscillator Utilizing Reconfigurable Matching and Phase Compensation

IEEE microwave and wireless technology letters (Print), 2024-09, p.1-4

2024

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Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

Science China. Information sciences, 2022-10, Vol.65 (10), p.202401, Article 202401

2022

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Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness

Science China. Information sciences, 2024, Vol.67 (1), p.119402, Article 119402

2024

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High linearity AlGaN/GaN HEMT with double-V th coupling for millimeter-wave applications

Chinese physics B, 2022-01, Vol.31 (2), p.27103

2022

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Digital-Assisted Repairing of the Six Steeds in Zhao Mausoleum

Augmented Reality, Virtual Reality, and Computer Graphics, p.249-260

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Ultrathin Barrier Layer AlN/GaN HEMTs Grown by Molecular Beam Epitaxy

2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC), 2023, p.1-3

2023

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Dual Schottky Junctions Varactors Using AlN/GaN Heterostructure with Strong Nonlinear Capacitance Characteristics

2024 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2024, Vol.1, p.1-3

2024

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Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology

2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2023, p.1-2

2023

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High performance millimeter-wave InAlN/GaN HEMT for low voltage RF applications via regrown Ohmic contact with contact ledge structure

A novel Si-rich SiN bilayer passivation with thin-barrier AlGaN/GaN HEMTs for high performance millimeter-wave applications

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

Analysis of Low Voltage RF Power Capability on AlGaN/GaN and InAlN/GaN HEMTs for Terminal Applications

High linearity AlGaN/GaN HEMT with double-Vth coupling for millimeter-wave applications

InAlN/GaN HEMT With n+GaN Contact Ledge Structure for Millimeter-Wave Low Voltage Applications

Dynamic Hand Gesture Recognition Based on Signals From Specialized Data Glove and Deep Learning Algorithms

Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications

Influence of Fin-Like Configuration Parameters on the Linearity of AlGaN/GaN HEMTs

High-Efficiency Millimeter-Wave Enhancement-Mode Ultrathin-Barrier AlGaN/GaN Fin-HEMT for Low-Voltage Terminal Applications

Switchable optical trapping and manipulation enabled by polarization-modulated multifunctional phase-change metasurfaces

High Efficiency Over 70% at 3.6-GHz InAlN/GaN HEMT Fabricated by Gate Recess and Oxidation Process for Low-Voltage RF Applications

High-Performance AlGaN/GaN HEMTs With Hybrid Schottky-Ohmic Drain for Ka-Band Applications

Improved Breakdown Voltage and Low Damage E-Mode Operation of AlON/AlN/GaN HEMTs Using Plasma Oxidation Treatment

Pantoprazole suppresses carcinogenesis and growth of hepatocellular carcinoma by inhibiting glycolysis and Na+/H+ exchange

A 130%-Tuning-Range Switchable Tri-Core Voltage-Controlled Oscillator Utilizing Reconfigurable Matching and Phase Compensation

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si 3 N 4 Bilayer Passivation

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness

High linearity AlGaN/GaN HEMT with double-V th coupling for millimeter-wave applications

Digital-Assisted Repairing of the Six Steeds in Zhao Mausoleum

Ultrathin Barrier Layer AlN/GaN HEMTs Grown by Molecular Beam Epitaxy

Dual Schottky Junctions Varactors Using AlN/GaN Heterostructure with Strong Nonlinear Capacitance Characteristics

Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology

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