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Enhancing the Thermo-Mechanical Property of Polymer by Weaving and Mixing High Length–Diameter Ratio Filler

Polymers, 2020-05, Vol.12 (6), p.1255

2020

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Calculating the Soft Error Vulnerabilities of Combinational Circuits by Re-Considering the Sensitive Area

IEEE transactions on nuclear science, 2014-02, Vol.61 (1), p.646-653

2014

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Characterization of Single-Event Transient Pulse Broadening Effect in 65 nm Bulk Inverter Chains Using Heavy Ion Microbeam

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.119-124

2017

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Novel Layout Technique for N-Hit Single-Event Transient Mitigation via Source-Extension

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2859-2866

2012

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SRAM Compilation and Placement Co-Optimization for Memory Subsystems

Electronics (Basel), 2023-03, Vol.12 (6), p.1353

Liu, Biwei

2023

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Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism

Microelectronics and reliability, 2012-06, Vol.52 (6), p.1227-1232

2012

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Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2914-2920

2008

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Temperature Dependency of Charge Sharing and MBU Sensitivity in 130-nm CMOS Technology

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2473-2479

2009

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Impact of Circuit Placement on Single Event Transients in 65 nm Bulk CMOS Technology

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2772-2777

2012

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A mixed-level framework to estimate SER induced by SEMT in advanced technologies

International journal of electronics, 2016-05, Vol.103 (5), p.807-818

2016

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Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process

Science China. Technological sciences, 2013-02, Vol.56 (2), p.271-279

2013

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Research on single event transient pulse quenching effect in 90 nm CMOS technology

Science China Technological Sciences, 2011-11, Vol.54 (11), p.3064-3069

2011

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Effects and mechanism of filler surface coating strategy on thermal conductivity of composites: A case study on epoxy/SiO2-coated BN composites

International journal of heat and mass transfer, 2021-01, Vol.164, p.120533, Article 120533

2021

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Simulation study of N-hit SET variation in differential cascade voltage switch logical circuits

Science China. Information sciences, 2015-02, Vol.58 (2), p.161-169

2015

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The Effect of Re-Convergence on SER Estimation in Combinational Circuits

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3122-3129

2009

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The effect of P＋ deep well doping on SET pulse propagation

Science China. Technological sciences, 2012-03, Vol.55 (3), p.665-672

2012

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Different Mechanisms of Temperature Dependency of N-Hit SET in Bulk and PD-SOI Technology

IEICE transactions on electronics, 2014, Vol.E97.C (5), p.455-459

2014

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Novel N-hit single event transient mitigation technique via open guard transistor in 65nm bulk CMOS process

Science China. Technological sciences, 2013-02, Vol.56 (2), p.271-279

2013

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Effect of p-well contact on n-well potential modulation in a 90 nm bulk technology

Science China. Technological sciences, 2012-04, Vol.55 (4), p.1001-1006

2012

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Greenhouse gas emission inventory of drinking water treatment plants and case studies in China

The Science of the total environment, 2024-02, Vol.912, p.169090-169090, Article 169090

2024

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Chemoproteomic Profiling Reveals the Mechanism of Bile Acid Tolerance in Bacteria

ACS chemical biology, 2022-09, Vol.17 (9), p.2461-2470

2022

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A novel sustainable N recycling process: Upcycling ammonia to ammonium fertilizer from dilute wastewater and simultaneously realizing phenol degradation via a visible solar-driven PECMA system with efficient Ag2S-BiVO4 photoanodes

The Science of the total environment, 2023-03, Vol.864, p.161121, Article 161121

2023

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Negative bias temperature instability induced single event transient pulse narrowing and broadening

Journal of semiconductors, 2010-12, Vol.31 (12), p.38-42

2010

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Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process

Science China. Information sciences, 2012-06, Vol.55 (6), p.1461-1468

2012

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Polyaniline-derived mesoporous carbon electrode for selective and efficient ammonium removal with in a flow-electrode capacitive deionization system

Journal of environmental chemical engineering, 2023-10, Vol.11 (5), p.110857, Article 110857

2023

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Enhancing the Thermo-Mechanical Property of Polymer by Weaving and Mixing High Length–Diameter Ratio Filler

Calculating the Soft Error Vulnerabilities of Combinational Circuits by Re-Considering the Sensitive Area

Characterization of Single-Event Transient Pulse Broadening Effect in 65 nm Bulk Inverter Chains Using Heavy Ion Microbeam

Novel Layout Technique for N-Hit Single-Event Transient Mitigation via Source-Extension

SRAM Compilation and Placement Co-Optimization for Memory Subsystems

Radiation hardened by design techniques to reduce single event transient pulse width based on the physical mechanism

Temperature Dependence of Digital SET Pulse Width in Bulk and SOI Technologies

Temperature Dependency of Charge Sharing and MBU Sensitivity in 130-nm CMOS Technology

Impact of Circuit Placement on Single Event Transients in 65 nm Bulk CMOS Technology

A mixed-level framework to estimate SER induced by SEMT in advanced technologies

Novel N-hit single event transient mitigation technique via open guard transistor in 65 nm bulk CMOS process

Research on single event transient pulse quenching effect in 90 nm CMOS technology

Effects and mechanism of filler surface coating strategy on thermal conductivity of composites: A case study on epoxy/SiO2-coated BN composites

Simulation study of N-hit SET variation in differential cascade voltage switch logical circuits

The Effect of Re-Convergence on SER Estimation in Combinational Circuits

The effect of P＋ deep well doping on SET pulse propagation

Different Mechanisms of Temperature Dependency of N-Hit SET in Bulk and PD-SOI Technology

Novel N-hit single event transient mitigation technique via open guard transistor in 65nm bulk CMOS process

Effect of p-well contact on n-well potential modulation in a 90 nm bulk technology

Greenhouse gas emission inventory of drinking water treatment plants and case studies in China

Chemoproteomic Profiling Reveals the Mechanism of Bile Acid Tolerance in Bacteria

A novel sustainable N recycling process: Upcycling ammonia to ammonium fertilizer from dilute wastewater and simultaneously realizing phenol degradation via a visible solar-driven PECMA system with efficient Ag2S-BiVO4 photoanodes

Negative bias temperature instability induced single event transient pulse narrowing and broadening

Device-physics-based analytical model for SET pulse in sub-100 nm bulk CMOS Process

Polyaniline-derived mesoporous carbon electrode for selective and efficient ammonium removal with in a flow-electrode capacitive deionization system

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