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Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Journal of crystal growth, 2018-10, Vol.499, p.1-7

2018

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Self-compensation of carbon in HVPE-GaN:C

Applied physics letters, 2020-07, Vol.117 (1)

2020

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p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

Journal of applied physics, 2021-04, Vol.129 (13)

2021

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Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Progress in crystal growth and characterization of materials, 2018-09, Vol.64 (3), p.63-74

2018

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Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Journal of crystal growth, 2012-07, Vol.350 (1), p.50-55

2012

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Electrical transport properties of highly doped N-type GaN materials

Semiconductor science and technology, 2022-05, Vol.37 (5), p.55012

2022

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High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Journal of applied physics, 2020-08, Vol.128 (8)

2020

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Crystal growth of HVPE-GaN doped with germanium

Journal of crystal growth, 2017-12, Vol.480, p.102-107

2017

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High nitrogen pressure solution growth of bulk GaN in "feed-seed" configuration

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1507-1510

2011

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Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

Journal of crystal growth, 2005-07, Vol.281 (1), p.38-46

2005

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Homoepitaxial growth of HVPE-GaN doped with Si

Journal of crystal growth, 2016-12, Vol.456, p.91-96

2016

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High nitrogen pressure solution growth of GaN in multi feed-seed configuration

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.453-456

2012

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Towards proper characterization of nonlinear metal-semiconductor contacts. Generalization of the transmission line method

Applied physics letters, 2011-08, Vol.99 (5), p.052101-052101-3

2011

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Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Journal of crystal growth, 2017-10, Vol.475, p.121-126

2017

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Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes

Journal of applied physics, 2003-11, Vol.94 (9), p.6122-6128

2003

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HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Journal of crystal growth, 2016-12, Vol.456, p.73-79

2016

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Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

Journal of crystal growth, 2012-07, Vol.350 (1), p.5-10

2012

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(Invited) Growth and Characterization of Bulk HVPE-GaN – Pathway to Highly Conductive and Semi-Insulating GaN Substrates

ECS transactions, 2017-01, Vol.80 (10), p.991-1003

2017

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Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

Journal of crystal growth, 2005-05, Vol.278 (1), p.443-448

2005

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Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Journal of applied physics, 2010-07, Vol.108 (2), p.023516-023516-6

2010

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Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Applied physics letters, 2008-10, Vol.93 (17), p.172117-172117-3

2008

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Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

Journal of applied physics, 2006-02, Vol.99 (3), p.033703-033703-5

2006

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Parallel conduction in p-type gallium nitride homo-structures

Semiconductor science and technology, 2008-09, Vol.23 (9), p.095007

2008

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Weak antilocalization and spin precession in quantum wells

Physical review. B, Condensed matter, 1996-02, Vol.53 (7), p.3912-3924

1996

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Determination of the effective mass of GaN from infrared reflectivity and Hall effect

Applied physics letters, 1996-02, Vol.68 (8), p.1114-1116

1996

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Doping in bulk HVPE-GaN grown on native seeds – highly conductive and semi-insulating crystals

Self-compensation of carbon in HVPE-GaN:C

p-type conductivity in GaN:Zn monocrystals grown by ammonothermal method

Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed–seed configuration

Electrical transport properties of highly doped N-type GaN materials

High temperature electrical transport properties of MBE-grown Mg-doped GaN and AlGaN materials

Crystal growth of HVPE-GaN doped with germanium

High nitrogen pressure solution growth of bulk GaN in "feed-seed" configuration

Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates

Homoepitaxial growth of HVPE-GaN doped with Si

High nitrogen pressure solution growth of GaN in multi feed-seed configuration

Towards proper characterization of nonlinear metal-semiconductor contacts. Generalization of the transmission line method

Crystallization of semi-insulating HVPE-GaN with solid iron as a source of dopants

Optical and electrical properties of homoepitaxially grown multiquantum well InGaN/GaN light-emitting diodes

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut

Multi feed seed (MFS) high pressure crystallization of 1―2 in GaN

(Invited) Growth and Characterization of Bulk HVPE-GaN – Pathway to Highly Conductive and Semi-Insulating GaN Substrates

Control of Mg doping of GaN in RF-plasma molecular beam epitaxy

Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates

Substrate misorientation induced strong increase in the hole concentration in Mg doped GaN grown by metalorganic vapor phase epitaxy

Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

Parallel conduction in p-type gallium nitride homo-structures

Weak antilocalization and spin precession in quantum wells

Determination of the effective mass of GaN from infrared reflectivity and Hall effect

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