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Strain effects on optical gain in wurtzite GaN

Journal of applied physics, 1997-07, Vol.82 (1), p.386-391

1997

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Valence band parameters of wurtzite materials

Solid state communications, 1996, Vol.99 (6), p.423-426

1996

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Strain effects on valence band structure in würtzite GaN quantum wells

Applied physics letters, 1996-10, Vol.69 (17), p.2504-2506

1996

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A comparison of minority electron transport in In0.53Ga0.47As and GaAs

Applied physics letters, 1993-07, Vol.63 (1), p.48-50

1993

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Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's

IEEE transactions on electron devices, 1999-08, Vol.46 (8), p.1760-1767

1999

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Anisotropic hole scattering in hexagonal GaN

Semiconductor science and technology, 1997-03, Vol.12 (3), p.280-283

1997

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Theory of the velocity-field relation in AlGaAs

Journal of applied physics, 1988-05, Vol.63 (10), p.5004-5008

1988

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Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

IEEE transactions on electron devices, 1998-01, Vol.45 (1), p.254-260

1998

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An investigation of the effects of doping profile variations on AlGaAs/GaAs high electron mobility transistor performance

Journal of applied physics, 1991-10, Vol.70 (8), p.4593-4600

1991

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Self-consistent calculation of mode spectra and modulation response in wurtzite GaN quantum-well lasers

IEEE photonics technology letters, 1998-01, Vol.10 (1), p.51-53

1998

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The implementation of physical boundary conditions in the Monte Carlo simulation of electron devices

IEEE transactions on computer-aided design of integrated circuits and systems, 1994-10, Vol.13 (10), p.1241-1246

1994

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Theoretical study of electron transport in gallium nitride

Journal of applied physics, 1995-03, Vol.77 (6), p.2834-2836

1995

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Analysis of delta-doped and uniformly doped AlGaAs/GaAs HEMT's by ensemble Monte Carlo simulations

IEEE transactions on electron devices, 1991-08, Vol.38 (8), p.1737-1742

1991

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Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies

IEEE transactions on electron devices, 1997-05, Vol.44 (5), p.815-821

1997

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Novel charge injection transistors with heterojunction source (launcher) and drain (blocker) configurations

Applied physics letters, 1993-07, Vol.63 (2), p.174-176

1993

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Effects of doping variations on electron transport in GaAs n+-n-n+ structures

Journal of applied physics, 1992-12, Vol.72 (12), p.5695-5701

1992

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Transition from longitudinal-optical phonon scattering to surface-optical phonon scattering in polar semiconductor superlattices

Applied physics letters, 1991-08, Vol.59 (9), p.1093-1095

1991

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Antibiotic prophylaxis in proximal femoral fracture

Injury, 1990-03, Vol.21 (2), p.104-106

1990

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Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode pattern

Applied physics letters, 1989-02, Vol.54 (6), p.567-569

1989

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Dielectric response functions of heavily doped zincblende semiconductors with finite particle lifetime

Journal of applied physics, 1992-11, Vol.72 (9), p.4139-4147

1992

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Electron velocity-field characteristics of In0.52Al0.48As

Applied physics letters, 1992-09, Vol.61 (10), p.1202-1204

1992

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Efficient ohmic boundary conditions for the Monte Carlo simulation of electron transport

IEEE transactions on electron devices, 1994-04, Vol.41 (4), p.601-606

1994

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Construction of higher-moment terms in the hydrodynamic electron-transport model

Journal of applied physics, 1993-11, Vol.74 (10), p.6197-6207

1993

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An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

IEEE transactions on electron devices, 1994-10, Vol.41 (10), p.1880-1882

1994

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Novel heterojunction real-space transfer logic transistor structures: a model-based investigation

IEEE transactions on electron devices, 1992-10, Vol.39 (10), p.2189-2196

1992

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Strain effects on optical gain in wurtzite GaN

Valence band parameters of wurtzite materials

Strain effects on valence band structure in würtzite GaN quantum wells

A comparison of minority electron transport in In0.53Ga0.47As and GaAs

Analysis of hot-electron reliability and device performance in 80-nm double-gate SOI n-MOSFET's

Anisotropic hole scattering in hexagonal GaN

Theory of the velocity-field relation in AlGaAs

Scaling trends for device performance and reliability in channel-engineered n-MOSFETs

An investigation of the effects of doping profile variations on AlGaAs/GaAs high electron mobility transistor performance

Self-consistent calculation of mode spectra and modulation response in wurtzite GaN quantum-well lasers

The implementation of physical boundary conditions in the Monte Carlo simulation of electron devices

Theoretical study of electron transport in gallium nitride

Analysis of delta-doped and uniformly doped AlGaAs/GaAs HEMT's by ensemble Monte Carlo simulations

Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies

Novel charge injection transistors with heterojunction source (launcher) and drain (blocker) configurations

Effects of doping variations on electron transport in GaAs n+-n-n+ structures

Transition from longitudinal-optical phonon scattering to surface-optical phonon scattering in polar semiconductor superlattices

Antibiotic prophylaxis in proximal femoral fracture

Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode pattern

Dielectric response functions of heavily doped zincblende semiconductors with finite particle lifetime

Electron velocity-field characteristics of In0.52Al0.48As

Efficient ohmic boundary conditions for the Monte Carlo simulation of electron transport

Construction of higher-moment terms in the hydrodynamic electron-transport model

An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications

Novel heterojunction real-space transfer logic transistor structures: a model-based investigation

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