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Metal gate work function tuning by Al incorporation in TiN

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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Are direct costs in schizophrenia influenced by duration of illness? results from a restrospective follow-up study

European psychiatry, 2024-08, Vol.67 (S1), p.S172-S173

2024

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Different modalities of measuring life engagement in people living with schizophrenia spectrum disorders: A preliminary analysis

European psychiatry, 2024-08, Vol.67 (S1), p.S211-S212

2024

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Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

Journal of applied physics, 2010-01, Vol.107 (2), p.024512-024512-7

2010

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Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Applied physics letters, 2016-05, Vol.108 (22)

2016

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Influence of the microstructure on the oxidation of Ni thin films

Corrosion science, 2012-06, Vol.59, p.282-289

2012

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Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

Thin solid films, 2008-04, Vol.516 (12), p.4083-4092

2008

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Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices

Physica status solidi. A, Applications and materials science, 2016-02, Vol.213 (2), p.265-269

2016

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Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2363-2368

2009

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Sr3Ti2O7 Ruddlesden−Popper Phase Synthesis by Milling Routes

Chemistry of materials, 2002-04, Vol.14 (4), p.1747-1754

2002

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MOCVD of Bismuth Oxides: Transport Properties and Deposition Mechanisms of the Bi(C6H5)3 Precursor

Chemistry of materials, 2004-08, Vol.16 (16), p.3176-3183

2004

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Developing a conductive oxygen barrier for ferroelectric integration

Microelectronic engineering, 2003-11, Vol.70 (2), p.377-383

2003

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Synthesis of Ferroelectric Bi4Ti3O12 by Alternative Routes: Wet No-Coprecipitation Chemistry and Mechanochemical Activation

Chemistry of materials, 2001-06, Vol.13 (6), p.2084-2091

2001

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Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi2Ta2O9-based ferroelectric capacitors

Journal of applied physics, 2005-09, Vol.98 (5)

2005

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Metal-Organic Chemical Vapor Deposition of Ferroelectric SrBi2Ta2O9 Films from a Fluorine-Containing Precursor System

Chemistry of materials, 2006-02, Vol.18 (4), p.1016-1022

2006

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A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.447-453

2005

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Microstructural analysis of integrated pin-shaped two-dimensional and three-dimensional ferroelectric capacitors from micro-focused synchrotron X-ray techniques

Journal of applied crystallography, 2006-06, Vol.39 (3), p.376-384

2006

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Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

Applied physics letters, 2006-06, Vol.88 (24)

2006

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Sidewalls contribution in integrated three-dimensional Sr0.8Bi2.2Ta2O9-based ferroelectric capacitors

Applied physics letters, 2005-08, Vol.87 (7)

2005

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Fluorine-free and fluorine containing MOCVD precursors for electronic oxides: a comparison

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-04, Vol.118 (1), p.264-269

2005

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Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 μm CMOS technology

Microelectronic engineering, 2006-10, Vol.83 (10), p.2027-2031

2006

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Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures

Journal of applied physics, 2007-01, Vol.101 (1), p.014908-014908-7

2007

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Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

IEEE transactions on electron devices, 2009-02, Vol.56 (2), p.354-358

2009

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Laser thermal anneal of polysilicon channel to boost 3D memory performance

2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2

2014

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Feasibility of InxGa1-xAs High Mobility Channel for 3-D NAND Memory

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.130-136

2017

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Metal gate work function tuning by Al incorporation in TiN

Are direct costs in schizophrenia influenced by duration of illness? results from a restrospective follow-up study

Different modalities of measuring life engagement in people living with schizophrenia spectrum disorders: A preliminary analysis

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

Intrinsic electron traps in atomic-layer deposited HfO2 insulators

Influence of the microstructure on the oxidation of Ni thin films

Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures

Electron energy distribution in Si/TiN and Si/Ru hybrid floating gates with hafnium oxide based insulators for charge trapping memory devices

Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells

Sr3Ti2O7 Ruddlesden−Popper Phase Synthesis by Milling Routes

MOCVD of Bismuth Oxides: Transport Properties and Deposition Mechanisms of the Bi(C6H5)3 Precursor

Developing a conductive oxygen barrier for ferroelectric integration

Synthesis of Ferroelectric Bi4Ti3O12 by Alternative Routes: Wet No-Coprecipitation Chemistry and Mechanochemical Activation

Composition control and ferroelectric properties of sidewalls in integrated three-dimensional SrBi2Ta2O9-based ferroelectric capacitors

Metal-Organic Chemical Vapor Deposition of Ferroelectric SrBi2Ta2O9 Films from a Fluorine-Containing Precursor System

A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling

Microstructural analysis of integrated pin-shaped two-dimensional and three-dimensional ferroelectric capacitors from micro-focused synchrotron X-ray techniques

Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

Sidewalls contribution in integrated three-dimensional Sr0.8Bi2.2Ta2O9-based ferroelectric capacitors

Fluorine-free and fluorine containing MOCVD precursors for electronic oxides: a comparison

Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18 μm CMOS technology

Enhanced oxidation of TiAlN barriers integrated in three-dimensional ferroelectric capacitor structures

Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell

Laser thermal anneal of polysilicon channel to boost 3D memory performance

Feasibility of InxGa1-xAs High Mobility Channel for 3-D NAND Memory

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