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Effect of surfactant addition on leaching process of weathered crust elution-deposited rare earth ores with magnesium sulfate

International journal of mining science and technology, 2023-08, Vol.33 (8), p.1045-1053

2023

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Short- and long-term outcomes of small auto- and cryopreserved allograft skin grafting in those with >60%TBSA deep burn wounds

Burns, 2017-02, Vol.43 (1), p.206-214

2017

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Research of 0.22 THz wide-band mixing circuit

Infrared and Laser Engineering, 2017-11, Vol.46 (11), p.1125003

2017

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Research of 0.2 THz broadband unbalanced multiplier circuit

Infrared and Laser Engineering, 2017-01, Vol.46 (1), p.106003

2017

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High-Power Bottom-Emitting Vertical-Cavity Surface-Emitting Lasers under Continuous-Wave, Quasi-Continuous-Wave, and Pulsed Operation

Applied physics express, 2011-05, Vol.4 (5), p.52102

2011

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Research of 0.2 THz broadband unbalanced multiplier circuit

Infrared and Laser Engineering, 2017, Vol.46 (1), p.106003

2017

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Homoepitaxial GaN terahertz planar Schottky barrier diodes

Journal of physics. D, Applied physics, 2022-12, Vol.55 (48), p.484004

2022

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70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz

Infrared and Laser Engineering, 2016-07, Vol.45 (7), p.720004

2016

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Application of surfactant for improving leaching process of weathered crust elution-deposited rare earth ores

Journal of rare earths, 2024-01, Vol.42 (1), p.181-190

2024

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A 177-183 GHz High-Power GaN-based Frequency Doubler with over 200 mW Output Power

IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1

2020

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High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz

IEEE electron device letters, 2023-03, Vol.44 (3), p.376-379

2023

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Modified tailings of weathered crust elution-deposited rare earth ores as adsorbents for recovery of rare earth ions from solutions: Kinetics and thermodynamics studies

Minerals engineering, 2023-01, Vol.191, p.107937, Article 107937

2023

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High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers

IEEE electron device letters, 2021-11, Vol.42 (11), p.1588-1591

2021

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GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz

IEEE electron device letters, 2021-12, Vol.42 (12), p.1739-1742

2021

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Role of polyacrylamide in the removal of soluble phosphorus and fluorine from phosphogypsum

Journal of material cycles and waste management, 2024, Vol.26 (1), p.478-490

2024

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Structural Design of 808 nm InGaAlAs Vertical-Cavity Surface-Emitting Laser

Zhōngguó jīguāng, 2011-09, Vol.38 (9), p.902007

2011

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GaAs PIN Diode Based 220 GHz Switch Design using Flip Chip Technique

IEEE transactions on terahertz science and technology, 2024-10, p.1-7

2024

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GaN planar Schottky barrier diode with cut-off frequency of 902 GHz

Electronics letters, 2016-08, Vol.52 (16), p.1408-1410

2016

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Optimization of n-DBR in High Power Vertical-Cavity Surface-Emitting Laser under a Short Pulsed Operation

Zhōngguó jīguāng, 2012-05, Vol.39 (5), p.502003

2012

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MOCVD Growth of AlGaInAs/AlGaAs Quantum Well for 852 nm Laser Diodes Studied by Reflectance Anisotropy Spectroscopy

Zhōngguó jīguāng, 2012-05, Vol.39 (5), p.502010

2012

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Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs

Optics express, 2011-06, Vol.19 (13), p.12569-12581

2011

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A linear array of 980 nm VCSEL and its high temperature operation characteristics

Journal of semiconductors, 2009-11, Vol.30 (11), p.59-62

张岩宁永强王烨刘光裕王贞福张星吏晶晶张立森王伟秦莉孙艳芳刘云王立军

2009

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A 170-230 GHz High-Power Frequency Doubler Based on a GaAs MMIC Process

IEEE microwave and wireless technology letters (Print), 2023-04, Vol.33 (4), p.427-430

2023

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Photoluminescence of colloidal YVO4:Eu/SiO2 core/shell nanocrystals

Optics communications, 2009-03, Vol.282 (6), p.1148-1153

2009

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High power and good beam quality of two-dimensional VCSEL array with integrated GaAs microlens array

Optics express, 2010-11, Vol.18 (23), p.23900-23905

2010

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Effect of surfactant addition on leaching process of weathered crust elution-deposited rare earth ores with magnesium sulfate

Short- and long-term outcomes of small auto- and cryopreserved allograft skin grafting in those with >60%TBSA deep burn wounds

Research of 0.22 THz wide-band mixing circuit

Research of 0.2 THz broadband unbalanced multiplier circuit

High-Power Bottom-Emitting Vertical-Cavity Surface-Emitting Lasers under Continuous-Wave, Quasi-Continuous-Wave, and Pulsed Operation

Research of 0.2 THz broadband unbalanced multiplier circuit

Homoepitaxial GaN terahertz planar Schottky barrier diodes

70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz

Application of surfactant for improving leaching process of weathered crust elution-deposited rare earth ores

A 177-183 GHz High-Power GaN-based Frequency Doubler with over 200 mW Output Power

High-Efficiency GaN/SiC Doubler Terahertz Monolithic Integrated Circuit at 175 GHz

Modified tailings of weathered crust elution-deposited rare earth ores as adsorbents for recovery of rare earth ions from solutions: Kinetics and thermodynamics studies

High-Power 300 GHz Solid-State Source Chain Based on GaN Doublers

GaN-Based Frequency Doubler With Pulsed Output Power Over 1 W at 216 GHz

Role of polyacrylamide in the removal of soluble phosphorus and fluorine from phosphogypsum

Structural Design of 808 nm InGaAlAs Vertical-Cavity Surface-Emitting Laser

GaAs PIN Diode Based 220 GHz Switch Design using Flip Chip Technique

GaN planar Schottky barrier diode with cut-off frequency of 902 GHz

Optimization of n-DBR in High Power Vertical-Cavity Surface-Emitting Laser under a Short Pulsed Operation

MOCVD Growth of AlGaInAs/AlGaAs Quantum Well for 852 nm Laser Diodes Studied by Reflectance Anisotropy Spectroscopy

Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs

A linear array of 980 nm VCSEL and its high temperature operation characteristics

A 170-230 GHz High-Power Frequency Doubler Based on a GaAs MMIC Process

Photoluminescence of colloidal YVO4:Eu/SiO2 core/shell nanocrystals

High power and good beam quality of two-dimensional VCSEL array with integrated GaAs microlens array

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