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Revisiting MOSFET threshold voltage extraction methods

Microelectronics and reliability, 2013-01, Vol.53 (1), p.90-104

2013

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Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs

Scientific reports, 2024-08, Vol.14 (1), p.17961-10, Article 17961

2024

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Performance improvement of nitride semiconductor-based deep-ultraviolet laser diodes with superlattice cladding layers

The European physical journal. D, Atomic, molecular, and optical physics, 2022, Vol.76 (10), p.183, Article 183

2022

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Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers

Applied physics. B, Lasers and optics, 2023-09, Vol.129 (9), Article 145

2023

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An Enhanced MLSCR Structure Suitable for ESD Protection in Advanced Epitaxial CMOS Technology

IEEE transactions on electron devices, 2019-05, Vol.66 (5), p.2062-2067

2019

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Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications

IEEE electron device letters, 2021-03, Vol.42 (3), p.391-394

2021

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Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

Nano-micro letters, 2022-12, Vol.14 (1), p.109-109, Article 109

2022

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RF transistors: Recent developments and roadmap toward terahertz applications

Solid-state electronics, 2007-08, Vol.51 (8), p.1079-1091

2007

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Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications

IEEE electron device letters, 2008-07, Vol.29 (7), p.753-755

2008

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Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

IEEE electron device letters, 2010-08, Vol.31 (8), p.845-847

2010

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Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

IEEE electron device letters, 2012-05, Vol.33 (5), p.640-642

2012

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High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection

IEEE electron device letters, 2013-02, Vol.34 (2), p.178-180

2013

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A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

IEEE transactions on electron devices, 2007-01, Vol.54 (1), p.131-140

2007

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Characteristics of Tunnel Field-effect Transistors under Power-on Electrostatic Discharge and Electrical Overstress Conditions

Sensors and materials, 2020-05, Vol.32 (5), p.1889

2020

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Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET

Micromachines (Basel), 2018-12, Vol.9 (12), p.657

2018

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Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer

Optics express, 2022-09, Vol.30 (20), p.36446-36455

2022

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Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers

Optics express, 2024-02, Vol.32 (4), p.5261-5272

2024

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Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers

Optics express, 2024-03, Vol.32 (6), p.10146-10157

2024

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Optimization of AlGaN-based deep UV LED performance by p-AlInGaN/AlInGaN graded superlattice electron blocking layer

Applied optics (2004), 2023-08, Vol.62 (22), p.6025

2023

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The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode

Semiconductor science and technology, 2021-05, Vol.36 (5), p.55017

2021

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Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage

Optics express, 2024-03, Vol.32 (6), p.10284-10294

2024

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Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

Nanotechnology, 2022-02, Vol.33 (7), p.75205

2022

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Improvement of the optoelectronic characteristics in deep-ultraviolet laser diodes with tapered p-cladding layer and triangular electron blocking layer

Applied physics. B, Lasers and optics, 2022-11, Vol.128 (11), Article 197

2022

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Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.814-819

2010

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Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

IEEE electron device letters, 2012-06, Vol.33 (6), p.893-895

2012

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Revisiting MOSFET threshold voltage extraction methods

Dual polarization for efficient III-nitride-based deep ultraviolet micro-LEDs

Performance improvement of nitride semiconductor-based deep-ultraviolet laser diodes with superlattice cladding layers

Optical confinement enhancement of AlGaN-based deep-ultraviolet laser diode by using asymmetrically wide waveguide layers

An Enhanced MLSCR Structure Suitable for ESD Protection in Advanced Epitaxial CMOS Technology

Compact and Low Leakage Devices for Bidirectional Low-Voltage ESD Protection Applications

Growth of Tellurium Nanobelts on h-BN for p-type Transistors with Ultrahigh Hole Mobility

RF transistors: Recent developments and roadmap toward terahertz applications

Novel Silicon-Controlled Rectifier (SCR) for High-Voltage Electrostatic Discharge (ESD) Applications

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Novel Capacitance Coupling Complementary Dual-Direction SCR for High-Voltage ESD

High-Robustness and Low-Capacitance Silicon-Controlled Rectifier for High-Speed I/O ESD Protection

A Review of Core Compact Models for Undoped Double-Gate SOI MOSFETs

Characteristics of Tunnel Field-effect Transistors under Power-on Electrostatic Discharge and Electrical Overstress Conditions

Improving ESD Protection Robustness Using SiGe Source/Drain Regions in Tunnel FET

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer

Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers

Optimization of AlGaN-based deep ultraviolet light emitting diodes with superlattice step doped electron blocking layers

Optimization of AlGaN-based deep UV LED performance by p-AlInGaN/AlInGaN graded superlattice electron blocking layer

The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode

Non-heavy doped pnp-AlGaN tunnel junction for an efficient deep-ultraviolet light emitting diode with low conduction voltage

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

Improvement of the optoelectronic characteristics in deep-ultraviolet laser diodes with tapered p-cladding layer and triangular electron blocking layer

Investigation of LOCOS- and Polysilicon-Bound Diodes for Robust Electrostatic Discharge (ESD) Applications

Minimizing Multiple Triggering Effect in Diode-Triggered Silicon-Controlled Rectifiers for ESD Protection Applications

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