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Complementary resistive switches for passive nanocrossbar memories

Nature materials, 2010-05, Vol.9 (5), p.403-406

2010

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Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Scientific reports, 2016-11, Vol.6 (1), p.36652-36652, Article 36652

2016

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Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

Nanotechnology, 2014-10, Vol.25 (42), p.425202-425202

2014

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Nanobattery Effect in RRAMs-Implications on Device Stability and Endurance

IEEE electron device letters, 2014-02, Vol.35 (2), p.208-210

2014

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An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

Nanoscale, 2013-06, Vol.5 (11), p.5119-5128

2013

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Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM

Applied physics. A, Materials science & processing, 2011-03, Vol.102 (4), p.791-809

2011

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A HfO2‐Based Complementary Switching Crossbar Adder

Advanced electronic materials, 2015-10, Vol.1 (10), p.n/a

2015

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Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells

IEEE transactions on nanotechnology, 2015-05, Vol.14 (3), p.505-512

2015

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Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

IEEE transactions on circuits and systems. I, Regular papers, 2014-08, Vol.61 (8), p.2402-2410

2014

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A Complementary Resistive Switch-Based Crossbar Array Adder

IEEE journal on emerging and selected topics in circuits and systems, 2015-03, Vol.5 (1), p.64-74

2015

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Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

Advanced functional materials, 2015-10, Vol.25 (40), p.6414-6423

2015

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Efficient exposure of non-Manhattan layouts for optical applications using variable shaped beam lithography

Journal of Micro/Nanopatterning, Materials, and Metrology, 2023-10, Vol.22 (4)

2023

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The Programmable Logic-in-Memory (PLiM) computer

2016 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2016, p.427-432

2016

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Sklansky tree adder realization in 1S1R resistive switching memory architecture

The European physical journal. ST, Special topics, 2019-10, Vol.228 (10), p.2269-2285

2019

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Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

Scientific reports, 2016-04, Vol.6 (1), p.23967-23967, Article 23967

2016

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Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches

Nanotechnology, 2015-10, Vol.26 (41), p.415202-415202

2015

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Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures

Scientific reports, 2013-10, Vol.3 (1), p.2856-2856, Article 2856

2013

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Dependence of the SET switching variability on the initial state in HfOx-based ReRAM

Physica status solidi. A, Applications and materials science, 2016-02, Vol.213 (2), p.316-319

2016

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Memristor based computation-in-memory architecture for data-intensive applications

2015 Design, Automation & Test in Europe Conference & Exhibition (DATE), 2015, p.1718-1725

2015

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Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays

ACM journal on emerging technologies in computing systems, 2018-07, Vol.14 (2), p.1-14

2018

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Storages Are Not Forever

Cognitive computation, 2017-10, Vol.9 (5), p.646-658

2017

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Big Data ohne Energiekollaps

Physik in unserer Zeit, 2015-03, Vol.46 (2), p.84-89

2015

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Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching

Physical review applied, 2018-11, Vol.10 (5), Article 054025

2018

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Low-current operations in 4F super(2)-compatible Ta sub(2)O sub(5)-based complementary resistive switches

Nanotechnology, 2015-10, Vol.26 (41), p.1-9

2015

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Low-current operations in 4F 2 -compatible Ta 2 O 5 -based complementary resistive switches

Nanotechnology, 2015-10, Vol.26 (41), p.415202

2015

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Complementary resistive switches for passive nanocrossbar memories

Multistate Memristive Tantalum Oxide Devices for Ternary Arithmetic

Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

Nanobattery Effect in RRAMs-Implications on Device Stability and Endurance

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM

A HfO2‐Based Complementary Switching Crossbar Adder

Modeling of Quantized Conductance Effects in Electrochemical Metallization Cells

Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

A Complementary Resistive Switch-Based Crossbar Array Adder

Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices

Efficient exposure of non-Manhattan layouts for optical applications using variable shaped beam lithography

The Programmable Logic-in-Memory (PLiM) computer

Sklansky tree adder realization in 1S1R resistive switching memory architecture

Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches

Ag/GeSx/Pt-based complementary resistive switches for hybrid CMOS/nanoelectronic logic and memory architectures

Dependence of the SET switching variability on the initial state in HfOx-based ReRAM

Memristor based computation-in-memory architecture for data-intensive applications

Kogge-Stone Adder Realization using 1S1R Resistive Switching Crossbar Arrays

Storages Are Not Forever

Big Data ohne Energiekollaps

Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching

Low-current operations in 4F super(2)-compatible Ta sub(2)O sub(5)-based complementary resistive switches

Low-current operations in 4F 2 -compatible Ta 2 O 5 -based complementary resistive switches

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