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Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors

Physica status solidi. A, Applications and materials science, 2024-09, Vol.221 (18), p.n/a

Mao, Ling‐Feng

2024

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Modeling source–drain voltage-dependent energy needed for emission or absorption of a photon in GaN devices

Applied physics. A, Materials science & processing, 2022-02, Vol.128 (2), Article 149

Mao, Ling-Feng

2022

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Thermionic emission current in graphene-based electronic devices

Applied physics. A, Materials science & processing, 2019-05, Vol.125 (5), p.1-11, Article 325

Mao, Ling-Feng

2019

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Physical origin of the temperature-dependent open-circuit voltage in solar cells

Applied physics. A, Materials science & processing, 2020-01, Vol.126 (1), Article 42

Mao, Ling-Feng

2020

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Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

ETRI Journal, 2022, 44(3), , pp.504-511

Mao, Ling‐Feng

2022

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Physical origins of the ideality factor of the current equation in Schottky junctions

Pramāṇa, 2020-12, Vol.94 (1), Article 16

Mao, Ling-Feng

2020

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Quantum coupling and electrothermal effects on electron transport in high-electron mobility transistors

Pramāṇa, 2019-07, Vol.93 (1), p.1-12, Article 11

Mao, Ling-Feng

2019

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Physical origin of kink in GaN HEMTs

Results in physics, 2021-11, Vol.30, p.104894, Article 104894

Mao, Ling-Feng

2021

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DFT Calculation about Oxygen Vacancy to Promote Adsorption of a CO Molecule on Single Au‐Supported Titanium Dioxide

physica status solidi (b), 2019-03, Vol.256 (3), p.n/a

2019

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Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (7), p.n/a

Mao, Ling‐Feng

2018

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Applying quantum tunnelling concept in the study of the coupling in acoustic waveguides

Results in physics, 2022-06, Vol.37, p.105528, Article 105528

Mao, Ling-Feng

2022

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Spatial phylogenetics of the Chinese angiosperm flora provides insights into endemism and conservation

Journal of integrative plant biology, 2022-01, Vol.64 (1), p.105-117

2022

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The Dopant Local Effect on the Stability of an Oxygen Vacancy and the Reliability of a Conductive Filament in Rutile Titanium Dioxide

physica status solidi (b), 2020-03, Vol.257 (3), p.n/a

2020

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Hot-Carriers' Effect on the Performance of Organic Schottky Diodes

IEEE access, 2020, Vol.8, p.65970-65982

Mao, Ling-Feng

2020

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Metal-substitution strategy to control the conductive path in titanium dioxide: ab initio calculations

The European physical journal. B, Condensed matter physics, 2018-05, Vol.91 (5), p.1-8, Article 92

2018

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Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

Scientific reports, 2016-04, Vol.6 (1), p.24777-24777, Article 24777

2016

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Applying recurrent neural networks to predict the work function of metal adatom adsorption on graphene

Diamond and related materials, 2024-01, Vol.141, p.110644, Article 110644

Mao, Ling-Feng

2024

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Impact of Energy Relaxation of Channel Electrons on Drain‐Induced Barrier Lowering in Nano‐Scale Si‐Based MOSFETs

ETRI Journal, 2017, 39(2), , pp.284-291

Mao, Ling‐Feng

2017

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Asplenium guodanum (Aspleniaceae), a distinct new fern species from northern Guangdong, China, based on morphological data and molecular phylogeny

PhytoKeys, 2024-04, Vol.241 (1), p.191-200

2024

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Quantum scattering and its impact on the source–drain current with defect generation in the channel of nanoscale transistors

Indian journal of physics, 2020-05, Vol.94 (5), p.583-592

Mao, Ling-Feng

2020

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The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

PloS one, 2015-06, Vol.10 (6), p.e0128438-e0128438

2015

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Investigation of visible‐light absorption in Cu2O/TiO2 heterojunctions with an interstitial at the interface

physica status solidi (b), 2017-02, Vol.254 (2), p.n/a

2017

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Electron velocity distribution on the abrupt change in source–drain current of GaN devices

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2022-09, Vol.36 (23)

Mao, Ling-Feng

2022

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Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors

Results in physics, 2024-09, Vol.64, p.107929, Article 107929

Mao, Ling-Feng

2024

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Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor

Current Applied Physics, 2018, 18(9), , pp.1020-1025

2018

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Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors

Modeling source–drain voltage-dependent energy needed for emission or absorption of a photon in GaN devices

Thermionic emission current in graphene-based electronic devices

Physical origin of the temperature-dependent open-circuit voltage in solar cells

Modeling negative and positive temperature dependence of the gate leakage current in GaN high‐electron mobility transistors

Physical origins of the ideality factor of the current equation in Schottky junctions

Quantum coupling and electrothermal effects on electron transport in high-electron mobility transistors

Physical origin of kink in GaN HEMTs

DFT Calculation about Oxygen Vacancy to Promote Adsorption of a CO Molecule on Single Au‐Supported Titanium Dioxide

Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors

Applying quantum tunnelling concept in the study of the coupling in acoustic waveguides

Spatial phylogenetics of the Chinese angiosperm flora provides insights into endemism and conservation

The Dopant Local Effect on the Stability of an Oxygen Vacancy and the Reliability of a Conductive Filament in Rutile Titanium Dioxide

Hot-Carriers' Effect on the Performance of Organic Schottky Diodes

Metal-substitution strategy to control the conductive path in titanium dioxide: ab initio calculations

Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations

Applying recurrent neural networks to predict the work function of metal adatom adsorption on graphene

Impact of Energy Relaxation of Channel Electrons on Drain‐Induced Barrier Lowering in Nano‐Scale Si‐Based MOSFETs

Asplenium guodanum (Aspleniaceae), a distinct new fern species from northern Guangdong, China, based on morphological data and molecular phylogeny

Quantum scattering and its impact on the source–drain current with defect generation in the channel of nanoscale transistors

The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons?

Investigation of visible‐light absorption in Cu2O/TiO2 heterojunctions with an interstitial at the interface

Electron velocity distribution on the abrupt change in source–drain current of GaN devices

Quantum coupling and self-heating impacts on threshold voltages of GaN metal–insulator-semiconductor high-electron-mobility transistors

Structure properties and electrical mechanisms of Si(001)/SiO2 interface with varying Si layer thickness in nano-scale transistor

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