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A Low Cost HPIB Compatible Interface to a Thermochuck for Computerised C-V Measurement System

ASEAN journal on science & technology for development, 2017-11, Vol.5 (1), p.43-49

2017

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Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

IEEE electron device letters, 2005-12, Vol.26 (12), p.906-908

2005

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Shipping Container as Shelter Provision Solution for Post-Disaster Reconstruction

E3S web of conferences, 2018, Vol.65, p.8007

2018

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Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

IEEE electron device letters, 2008-08, Vol.29 (8), p.934-937

2008

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Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2490-2498

2003

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High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

IEEE electron device letters, 2003-07, Vol.24 (7), p.469-471

2003

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The Frequency of Snowline-Region Planets from Four Years of OGLE-MOA-Wise Second-Generation Microlensing

Monthly notices of the Royal Astronomical Society, 2016-04, Vol.457 (4), p.4089-4113

2016

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MOA-2011-BLG-262Lb: A SUB-EARTH-MASS MOON ORBITING A GAS GIANT PRIMARY OR A HIGH VELOCITY PLANETARY SYSTEM IN THE GALACTIC BULGE

The Astrophysical journal, 2014-04, Vol.785 (2), p.1-13

2014

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A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

IEEE electron device letters, 2000-08, Vol.21 (8), p.411-413

2000

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The Asymptotic Existence of Resolvable Group Divisible Designs

Journal of combinatorial designs, 2013-03, Vol.21 (3), p.112-126

2013

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Greening existing buildings through Building Information Modelling: A review of the recent development

Building and environment, 2021-08, Vol.200, p.107924, Article 107924

2021

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A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

IEEE electron device letters, 2003-09, Vol.24 (9), p.598-600

2003

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Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

IEEE transactions on electron devices, 2004-12, Vol.51 (12), p.2246-2248

2004

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Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

IEEE electron device letters, 2004-06, Vol.25 (6), p.417-419

2004

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A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

IEEE transactions on electron devices, 2002-12, Vol.49 (12), p.2254-2262

2002

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Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

IEEE electron device letters, 2001-11, Vol.22 (11), p.545-547

2001

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Planning and coordination of modular construction

Automation in construction, 2022-09, Vol.141, p.104455, Article 104455

2022

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MORPHOTYPOLOGICAL ANALYSIS OF STARCH GRANULES THROUGH DISCRIMINANT METHOD AND ITS APPLICATION IN PLANT ARCHEOLOGICAL SAMPLES

Applied ecology and environmental research, 2020, Vol.18 (3), p.4595-4608

2020

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Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.388-391

2001

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Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

IEEE transactions on electron devices, 2000-03, Vol.47 (3), p.650-652

2000

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A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.97-102

2000

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The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

IEEE transactions on electron devices, 1999-04, Vol.46 (4), p.738-746

1999

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Access balancing in storage systems by labeling partial Steiner systems

Designs, codes, and cryptography, 2020-11, Vol.88 (11), p.2361-2376

2020

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A survey on resolvable group divisible designs with block size four

Discrete mathematics, 2004-03, Vol.279 (1), p.225-245

2004

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The Contribution of Management of Change to Process Safety Accident in the Chemical Process Industry

Chemical engineering transactions, 2017-03, Vol.56

2017

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A Low Cost HPIB Compatible Interface to a Thermochuck for Computerised C-V Measurement System

Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET

Shipping Container as Shelter Provision Solution for Post-Disaster Reconstruction

Self-Heating-Induced Spatial Spread of Interface State Generation by Hot-Electron Effect: Role of the High-Energy Tail Electron

Generation-recombination noise in the near fully depleted SIMOX SOI n-MOSFET - physical characteristics and modeling

High-energy tail electrons as the mechanism for the worst-case hot-carrier stress degradation of the deep submicrometer N-MOSFET

The Frequency of Snowline-Region Planets from Four Years of OGLE-MOA-Wise Second-Generation Microlensing

MOA-2011-BLG-262Lb: A SUB-EARTH-MASS MOON ORBITING A GAS GIANT PRIMARY OR A HIGH VELOCITY PLANETARY SYSTEM IN THE GALACTIC BULGE

A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET

The Asymptotic Existence of Resolvable Group Divisible Designs

Greening existing buildings through Building Information Modelling: A review of the recent development

A reassessment of ac hot-carrier degradation in deep-submicrometer LDD N-MOSFET

Evidence for a composite interface State generation mode in the CHE-stressed deep-submicrometer n-MOSFET

Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs

A comprehensive study of indium implantation-induced damage in deep submicrometer nMOSFET: device characterization and damage assessment

Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

Planning and coordination of modular construction

MORPHOTYPOLOGICAL ANALYSIS OF STARCH GRANULES THROUGH DISCRIMINANT METHOD AND ITS APPLICATION IN PLANT ARCHEOLOGICAL SAMPLES

Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET

Characterization of leakage current in thin gate oxide subjected to 10 keV X-ray irradiation

A steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

The role of electron traps on the post-stress interface trap generation in hot-carrier stressed p-MOSFETs

Access balancing in storage systems by labeling partial Steiner systems

A survey on resolvable group divisible designs with block size four

The Contribution of Management of Change to Process Safety Accident in the Chemical Process Industry

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