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Intranasal delivery of shRNA to knockdown the 5HT-2A receptor enhances memory and alleviates anxiety

Translational psychiatry, 2024-03, Vol.14 (1), p.154-154, Article 154

2024

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Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission

IEEE transactions on electron devices, 2016-05, Vol.63 (5), p.2016-2022

2016

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Reduction of Hot Carrier Degradation of FinFETs Due to Short-Pulse Stress

IEEE electron device letters, 2015-12, Vol.36 (12), p.1274-1276

2015

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Dielectric breakdown mechanisms in gate oxides

Journal of applied physics, 2005-12, Vol.98 (12), p.121301-121301-36

2005

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Genetic modulation of the HTR2A gene reduces anxiety-related behavior in mice

PNAS nexus, 2023-06, Vol.2 (6), p.pgad170-pgad170

2023

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Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding

IEEE electron device letters, 2013-07, Vol.34 (7), p.837-839

2013

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Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

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Interfacial layer optimization of high- k/metal gate stacks for low temperature processing

Microelectronic engineering, 2009-07, Vol.86 (7), p.1632-1634

2009

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High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

ECS transactions, 2008, Vol.16 (4), p.291-305

2008

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Separating NBTI and PBTI effects on the degradation of Ring Oscillator frequency

2011 IEEE International Integrated Reliability Workshop Final Report, 2011, p.1-6

2011

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Transient self-heating modeling and simulations of back-end-of-line interconnects

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.P-MR.2-1-P-MR.2-5

2018

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A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.2A.2-1-2A.2-9

2022

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Combined Ramp Voltage Stress and Constant Voltage Stress for optimal BTI voltage acceleration and lifetime modeling

2014 IEEE International Reliability Physics Symposium, 2014, p.XT.7.1-XT.7.4

2014

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Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

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Performance Degradation Analysis and Hot-Carrier Injection Impact on the Lifetime Prediction of LC Voltage Control Oscillator

IEEE transactions on electron devices, 2015-07, Vol.62 (7), p.2148-2154

2015

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Electromigration characteristics of power grid like structures

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4F.3-1-4F.3-5

2018

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Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies

2011 International Reliability Physics Symposium, 2011, p.2B.4.1-2B.4.4

2011

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Modeling of energy distributions for plasma implantation

Surface & coatings technology, 2001-02, Vol.136 (1), p.132-137

2001

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Plasma immersion ion implantation with dielectric substrates

IEEE transactions on plasma science, 1996-12, Vol.24 (6), p.1383-1388

1996

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A process-variation-cognizant efficient MOL and BEOL TDDB evaluation method

2017 IEEE International Reliability Physics Symposium (IRPS), 2017, p.5B-4.1-5B-4.7

2017

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Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements

2015 IEEE International Reliability Physics Symposium, 2015, p.2B.1.1-2B.1.6

2015

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Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics

IEEE electron device letters, 2002-11, Vol.23 (11), p.661-663

2002

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Plasma immersion ion implantation for electronic materials

Japanese Journal of Applied Physics, 1996, Vol.35 (2B), p.1027-1036

1996

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Estimating transistor channel temperature using time-resolved and time-integrated NIR emission

2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.6B.4-1-6B.4-6

2018

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A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)

2015 IEEE International Reliability Physics Symposium, 2015, p.2A.2.1-2A.2.11

2015

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Intranasal delivery of shRNA to knockdown the 5HT-2A receptor enhances memory and alleviates anxiety

Self-Heating Measurement of 14-nm FinFET SOI Transistors Using 2-D Time-Resolved Emission

Reduction of Hot Carrier Degradation of FinFETs Due to Short-Pulse Stress

Dielectric breakdown mechanisms in gate oxides

Genetic modulation of the HTR2A gene reduces anxiety-related behavior in mice

Superior PBTI Reliability for SOI FinFET Technologies and Its Physical Understanding

Long Term NBTI Relaxation Under AC and DC Biased Stress and Recovery

Interfacial layer optimization of high- k/metal gate stacks for low temperature processing

High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes

Separating NBTI and PBTI effects on the degradation of Ring Oscillator frequency

Transient self-heating modeling and simulations of back-end-of-line interconnects

A Flexible and Inherently Self-Consistent Methodology for MOL/BEOL/MIMCAP TDDB Applications with Excessive Variability-Induced Degradation

Combined Ramp Voltage Stress and Constant Voltage Stress for optimal BTI voltage acceleration and lifetime modeling

Transformation of Ramped Current Stress VBDto Constant Voltage Stress TDDB TBD

Performance Degradation Analysis and Hot-Carrier Injection Impact on the Lifetime Prediction of LC Voltage Control Oscillator

Electromigration characteristics of power grid like structures

Reliability monitoring ring oscillator structures for isolated/combined NBTI and PBTI measurement in high-k metal gate technologies

Modeling of energy distributions for plasma implantation

Plasma immersion ion implantation with dielectric substrates

A process-variation-cognizant efficient MOL and BEOL TDDB evaluation method

Self-heating characterization of FinFET SOI devices using 2D time resolved emission measurements

Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics

Plasma immersion ion implantation for electronic materials

Estimating transistor channel temperature using time-resolved and time-integrated NIR emission

A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)

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