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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

IEEE electron device letters, 2018-02, Vol.39 (2), p.208-211

2018

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Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells

Chemical communications (Cambridge, England), 2012-01, Vol.48 (24), p.3006-3008

2012

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Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.950-956

2019

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Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

IEEE access, 2024, Vol.12, p.16989-16998

2024

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Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

IEEE transactions on electron devices, 2016-04, Vol.63 (4), p.1471-1477

2016

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Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1038-1044

2017

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Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

AIP advances, 2024-01, Vol.14 (1), p.015054-015054-5

2024

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A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Scientific reports, 2021-11, Vol.11 (1), p.22431-22431, Article 22431

2021

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Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

IEEE transactions on electron devices, 2016-10, Vol.63 (10), p.3908-3913

2016

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FRRW: A feature extraction-based robust and reversible watermarking scheme utilizing zernike moments and histogram shifting

Journal of King Saud University. Computer and information sciences, 2023-09, Vol.35 (8), p.101698, Article 101698

2023

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Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures

Applied physics letters, 2007-10, Vol.91 (17)

2007

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Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

AIP advances, 2020-07, Vol.10 (7), p.075212-075212-7

2020

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Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Journal of applied physics, 2011-04, Vol.109 (7), p.074512-074512-6

2011

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Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

Crystals (Basel), 2022-10, Vol.12 (11), p.1521

2022

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP advances, 2021-08, Vol.11 (8), p.085204-085204-6

2021

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A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

AIP advances, 2022-02, Vol.12 (2), p.025012-025012-5

2022

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Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of the Korean Physical Society, 2017, 71(12), , pp.963-967

2017

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An Artificial Neural Network Assisted Optimization System for Analog Design Space Exploration

IEEE transactions on computer-aided design of integrated circuits and systems, 2020-10, Vol.39 (10), p.2640-2653

2020

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Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors

Physica. E, Low-dimensional systems & nanostructures, 2014-08, Vol.62, p.76-79

2014

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The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

Journal of the Korean Physical Society, 2016, 68(7), , pp.883-888

2016

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Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Applied physics letters, 2004-03, Vol.84 (9), p.1585-1587

2004

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Absorption and luminescence of the surface states in ZnS nanoparticles

Journal of applied physics, 1997-09, Vol.82 (6), p.3111-3115

1997

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Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon

Applied physics letters, 2010-05, Vol.96 (19), p.191501-191501-3

2010

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Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

Applied physics letters, 2024-04, Vol.124 (15)

2024

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A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.1-5

2023

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Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors

Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells

Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays

Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs

Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs

Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistors

A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology

Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering

FRRW: A feature extraction-based robust and reversible watermarking scheme utilizing zernike moments and histogram shifting

Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures

Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors

Extraction of AlGaN/GaN heterostructure Schottky diode barrier heights from forward current-voltage characteristics

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate

Effects of floating gate structures on the two-dimensional electron gas density and electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

An Artificial Neural Network Assisted Optimization System for Analog Design Space Exploration

Influence of polarization coulomb field scattering on the subthreshold swing in depletion-mode AlGaN/AlN/GaN heterostructure field-effect transistors

The role of polarization coulomb field scattering in the electron mobility of AlGaN/AlN/GaN heterostructure field-effect transistors

Thermal stability of Schottky contacts on strained AlGaN/GaN heterostructures

Absorption and luminescence of the surface states in ZnS nanoparticles

Pressure-independent point in current-voltage characteristics of coplanar electrode microplasma devices operated in neon

Bias-dependent electron velocity and short-channel effect in scaling sub-100 nm InAlN/GaN HFETs

A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs

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